arXiv subjects

Steven C. Erwin

Publications and source records attributed to Steven C. Erwin.

31 records · Page 2Linked to original sources

arXiv2004

Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by developing a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong modification of the spin and charge dynamics of electrons, and we show how the symmetry properties of the charge current can be exploited to detect spin injection in silicon using currently available techniques.

cond-mat.other↗

arXiv2004

Tailoring ferromagnetic chalcopyrites

If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that band gaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and band gaps are related in magnetic semiconductors. Here we explore theoretically these and other relationships within 64 members of a single materials class, the Mn-doped II-IV-V2 chalcopyrites, three of which are already known experimentally to be ferromagnetic semiconductors. Our first-principles results reveal a variation of magnetic properties across different materials that cannot be explained by either of the two dominant models of ferromagnetism in semiconductors. Based on our results for structural, electronic, and magnetic properties, we identify a small number of new stable chalcopyrites with excellent prospects for ferromagnetism.

cond-mat.mtrl-sci↗

arXiv2003

Toward one-band superconductivity in MgB2

The two-gap model for superconductivity in MgB2 predicts that interband impurity scattering should be pair breaking, reducing the critical temperature. This is perhaps the only prediction of the model that has not been confirmed experimentally. It was previously shown theoretically that common substitutional impurities lead to negligible interband scattering - if the lattice is assumed not to distort. Here we report theoretical results showing that certain impurities can indeed produce lattice distortions sufficiently large to create measurable interband scattering. On this basis, we predict that isoelectronic codoping with Al and Na will provide a decisive test of the two-gap model.

cond-mat.supr-con↗

arXiv2003

Self-Doping of Gold Chains on Silicon: A New Structural Model for Si(111)5x2-Au

A new structural model for the Si(111)5x2-Au reconstruction is proposed and analyzed using first-principles calculations. The basic model consists of a "double honeycomb chain" decorated by Si adatoms. The 5x1 periodicity of the honeycomb chains is doubled by the presence of a half-occupied row of Si atoms that partially rebonds the chains. Additional adatoms supply electrons that dope the parent band structure and stabilize the period doubling; the optimal doping corresponds to one adatom per four 5x2 cells, in agreement with experiment. All the main features observed in scanning tunneling microscopy and photoemission are well reproduced.

cond-mat↗

arXiv2003

Is manganese-doped diamond a ferromagnetic semiconductor?

We use density-functional theoretical methods to examine the recent prediction, based on a mean-field solution of the Zener model, that diamond doped by Mn (with spin S=5/2) would be a dilute magnetic semiconductor that remains ferromagnetic well above room temperature. Our findings suggest this to be unlikely, for four reasons: (1) substitutional Mn in diamond has a low-spin S=1/2 ground state; (2) the substitutional site is energetically unfavorable relative to the much larger "divacancy" site; 3) Mn in the divacancy site is an acceptor, but with only hyperdeep levels, and hence the holes are likely to remain localized; (4) the calculated Heisenberg couplings between Mn in nearby divacancy sites are two orders of magnitude smaller than for substitutional Mn in germanium.

cond-mat.mtrl-sci↗

arXiv2003

Theory of dopants and defects in Co-doped TiO2 anatase

We report first-principles microscopic calculations of the formation energy, electrical activity, and magnetic moment of Co dopants and a variety of native defects in TiO2 anatase. Using these results, we use equilibrium thermodynamics to predict the resulting carrier concentration, the average magnetic moment per Co, and the dominant oxidation state of Co. The predicted values are in good agreement with experiment under the assumption of O-poor growth conditions. In this regime, a substantial fraction of Co dopants occupy interstitial sites as donors. The incomplete compensation of these donors by substitutional Co acceptors then leads to n-type behavior, as observed experimentally.

cond-mat.mtrl-sci↗

arXiv2002

Self-compensation in manganese-doped ferromagnetic semiconductors

We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn.

cond-mat.mtrl-sci↗

arXiv2002

First-principles study of nucleation, growth, and interface structure of Fe/GaAs

We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more, atomically abrupt interfaces are energetically favored. (3) For Fe films over a range of thicknesses, both Ga- and As-adlayers dramatically reduce the formation energies of the films, suggesting a surfactant-like action. (4) During the first few monolayers of growth, Ga or As atoms are likely to be liberated from the interface and diffuse to the Fe film surface. Magnetism plays an important auxiliary role for these processes, even in the dilute limit of atomic adsorption. Most of the films exhibit ferromagnetic order even at half-monolayer coverage, while certain adlayer-capped films show a slight preference for antiferromagnetic order.

cond-mat.mtrl-sci↗

arXiv1998

Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator

We demonstrate theoretically that the electronic ground state of the potassium-covered Si(111)-B surface is a Mott insulator, explicitly contradicting band theory but in good agreement with recent experiments. We determine the physical structure by standard density-functional methods, and obtain the electronic ground state by exact diagonalization of a many-body Hamiltonian. The many-body conductivity reveals a Brinkman-Rice metal-insulator transition at a critical interaction strength; the calculated interaction strength is well above this critical value.

cond-mat.mtrl-sci↗

arXiv1998

Theory of the "honeycomb chain-channel" reconstruction of Si(111)3x1

First-principles electronic-structure methods are used to study a structural model for Ag/Si(111)3x1 recently proposed on the basis of transmission electron diffraction data. The fully relaxed geometry for this model is far more energetically favorable than any previously proposed, partly due to the unusual formation of a Si double bond in the surface layer. The calculated electronic properties of this model are in complete agreement with data from angle-resolved photoemission and scanning tunneling microscopy.

cond-mat.mtrl-sci↗

arXiv1996

Structure and Stability of Si(114)-(2x1)

We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruction. We propose a complete model for the reconstructed surface based on scanning tunneling microscopy images and first-principles total-energy calculations. The structure and stability of Si(114)-(2x1) arises from a balance between surface dangling bond reduction and surface stress relief, and provides a key to understanding the morphology of a family of surfaces oriented between (001) and (114).

mtrl-th↗

arXiv1993

Do the A4c60 Fullerides Have a Broken-Symmetry Ground State?

Band theory predicts both K3C60 and K4C60 to be metals; various experimental probes show that while K3C60 is indeed metallic, K4C60 appears to be insulating. The standard view of this apparent failure of the single-particle picture is that electron correlation is predominant. We describe an alternative scenario, motivated on theoretical grounds, which invokes a spin- or charge-density-wave state to explain the observed insulating behavior.

cond-mat↗

arXiv1993

Electronic Structure of Superconducting Ba6c60

We report the results of first-principles electronic-structure calculations for superconducting Ba6C60. Unlike the A3C60 superconductors, this new compound shows strong Ba-C hybridization in the valence and conduction regions, mixed covalent/ionic bonding character, partial charge transfer, and insulating zero-gap band structure.

cond-mat↗