arXiv subjects

Steven G. Louie

Publications and source records attributed to Steven G. Louie.

At least 91 records · Page 5Linked to original sources

arXiv2019

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.

cond-mat.str-el↗

arXiv2019

Electron-Phonon Coupling from $\textit{Ab Initio}$ Linear-Response Theory within the $GW$ Method: Correlation-Enhanced Interactions and Superconductivity in Ba$_{1-x}$K$_x$BiO$_3$

We present a new first-principles linear-response theory of changes due to perturbations in the quasiparticle self-energy operator within the $GW$ method. This approach, named $GW$ perturbation theory ($GW$PT), is applied to calculate the electron-phonon ($e$-ph) interactions with the full inclusion of the $GW$ non-local, energy-dependent self-energy effects, going beyond density-functional perturbation theory. Avoiding limitations of the frozen-phonon technique, $GW$PT gives access to $e$-ph matrix elements at the $GW$ level for all phonons and scattering processes, and the computational cost scales linearly with the number of phonon modes (wavevectors and branches) investigated. We demonstrate the capabilities of $GW$PT by studying the $e$-ph coupling and superconductivity in Ba$_{0.6}$K$_{0.4}$BiO$_3$. We show that many-electron correlations significantly enhance the $e$-ph interactions for states near the Fermi surface, and explain the observed high superconductivity transition temperature of Ba$_{0.6}$K$_{0.4}$BiO$_3$ as well as its doping dependence.

cond-mat.mtrl-sci↗

arXiv2019

Non-Universal Critical Behaviors in Disordered Pseudospin-1 Systems

It is well known that for ordinary one-dimensional (1D) disordered systems, the Anderson localization length $ξ$ diverges as $λ^m$ in the long wavelength limit ($λ\rightarrow \infty$ ) with a universal exponent $m=2$, independent of the type of disorder. Here, we show rigorously that pseudospin-1 systems exhibit non-universal critical behaviors when they are subjected to 1D random potentials. In such systems, we find that $ξ\propto λ^m$ with $m$ depending on the type of disorder. For binary disorder, $m=6$ and the fast divergence is due to a super-Klein-tunneling effect (SKTE). When we add additional potential fluctuations to the binary disorder, the critical exponent $m$ crosses over from 6 to 4 as the wavelength increases. Moreover, for disordered superlattices, in which the random potential layers are separated by layers of background medium, the exponent $m$ is further reduced to 2 due to the multiple reflections inside the background layer. To obtain the above results, we developed a new analytic method based on a stack recursion equation. Our analytical results are in excellent agreements with the numerical results obtained by the transfer-matrix method (TMM). For pseudospin-1/2 systems, we find both numerically and analytically that $ξ\proptoλ^2$ for all types of disorder, same as ordinary 1D disordered systems. Our new analytical method provides a convenient way to obtain easily the critical exponent $m$ for general 1D Anderson localization problems.

cond-mat.dis-nn↗

arXiv2019

Accelerating $GW$-Based Energy Level Alignment Calculations for Molecule-Metal Interfaces Using a Substrate Screening Approach

The physics of electronic energy level alignment at interfaces formed between molecules and metals can in general be accurately captured by the \emph{ab initio} $GW$ approach. However, the computational cost of such $GW$ calculations for typical interfaces is significant, given their large system size and chemical complexity. In the past, approximate self-energy corrections, such as those constructed from image-charge models together with gas-phase molecular level corrections, have been used to compute level alignment with good accuracy. However, these approaches often neglect dynamical effects of the polarizability and require the definition of an image plane. In this work, we propose a new approximation to enable more efficient $GW$-quality calculations of interfaces, where we greatly simplify the calculation of the non-interacting polarizability, a primary bottleneck for large heterogeneous systems. This is achieved by first computing the non-interacting polarizability of each individual component of the interface, e.g., the molecule and the metal, without the use of large supercells; and then using folding and spatial truncation techniques to efficiently combine these quantities. Overall this approach significantly reduces the computational cost for conventional $GW$ calculations of level alignment without sacrificing the accuracy. Moreover, this approach captures both dynamical and nonlocal polarization effects without the need to invoke a classical image-charge expression or to define an image plane. We demonstrate our approach by considering a model system of benzene at relatively low coverage on aluminum (111) surface. Although developed for such interfaces, the method can be readily extended to other heterogeneous interfaces.

cond-mat.mtrl-sci↗

arXiv2019

Reproducibility in $G_0W_0$ Calculations for Solids

Ab initio many-body perturbation theory within the $GW$ approximation is a Green's function formalism widely used in the calculation of quasiparticle excitation energies of solids. In what has become an increasingly standard approach, Kohn-Sham eigenenergies, generated from a DFT calculation with a strategically-chosen exchange correlation functional ``starting point'', are used to construct $G$ and $W$, and then perturbatively corrected by the resultant $GW$ self-energy. In practice, there are several ways to construct the $GW$ self-energy, and these can lead to variations in predicted quasiparticle energies. For example, for ZnO and TiO$_2$, reported $GW$ fundamental gaps can vary by more than 1 eV. In this work, we address the convergence and key approximations in contemporary $G_0W_0$ calculations, including frequency-integration schemes and the treatment of the Coulomb divergence in the exact-exchange term. We study several systems,and compare three different $GW$ codes: BerkeleyGW, Abinit and Yambo. We demonstrate, for the first time, that the same quasiparticle energies for systems in the condensed phase can be obtained with different codes, and we provide a comprehensive assessment of implementations of the $GW$ approximation.

cond-mat.mtrl-sci↗

arXiv2018

Does the existence of Majorana zero mode in superconducting vortices imply the superconductivity is topologically non-trivial?

We show that the presence of Majorana zero modes (2D), and chiral-dispersing Majorana modes (3D), in the vortex cores of superconductors are neither sufficient nor necessary conditions for one to conclude the superconductivity is topologically non-trivial. We discuss the relevance of this result to the proximity-induced superconductivity, in the presence of magnetic field, on the surface of topological insulators.

cond-mat.str-el↗

arXiv2018

Valley-dependent Exciton Fine Structure and Autler-Townes Doublets from Berry Phases in Monolayer Molybdenum Diselenide

The Berry phase of Bloch states can have profound effects on electron dynamics lead to novel transport phenomena, such as the anomalous Hall effect and the valley Hall effect. Recently, it was predicted that the Berry phase effect can also modify the exciton states in transition metal dichalcogenide monolayers, and lift the energy degeneracy of exciton states with opposite angular momentum through an effective valley-orbital coupling. Here, we report the first observation and control of the Berry-phase induced splitting of the 2p-exciton states in monolayer molybdenum diselenide using the intraexciton optical Stark spectroscopy. We observe the time-reversal-symmetric analog of the orbital Zeeman effect resulting from the valley-dependent Berry phase, which leads to energy difference of +14 (-14) meV between the $2p^+$ and $2p^-$ exciton states in +K (-K) valley, consistent with the ordering from our ab initio GW-BSE results. In addition, we show that the light-matter coupling between intraexciton states are remarkably strong, leading to prominent valley-dependent Autler-Townes doublet under resonant driving. Our study opens up new pathways to coherently manipulate the quantum states and excitonic excitation with infrared radiation in two-dimensional semiconductors.

cond-mat.mes-hall↗

arXiv2018

Topological Phases in Cove-Edged and Chevron Graphene Nanoribbons: Geometric Structures, Z2 Invariants, and Junction States

Graphene nanoribbons (GNRs) have recently been shown by Cao, Zhao, and Louie [Cao, T.; Zhao, F.; Louie, S. G. Phys. Rev. Lett. 2017, 119, 076401] to possess distinct topological phases in general, characterized by a Z2 invariant. Cove-edged and chevron GNRs moreover are chemically and structurally diverse, quasi-one-dimensional (1D) nanostructures whose structure and electronic properties can be rationally controlled by bottom-up synthesis from precursor molecules. We derive the value of the topological invariant of the different types of cove-edged and chevron GNRs, and we investigate the electronic properties of various junctions formed by these GNRs, as well as such GNRs with the more common armchair or zigzag GNRs. We study the topological junction states at the interface of two topologically distinct segments. For an isolated GNR having two ends of different terminations, topological end states are shown to develop only at the topologically nontrivial end. Our work extends the explicit categorization of topological invariants of GNRs beyond the previously demonstrated armchair GNRs and provides new design rules for novel GNR junctions as well as future GNR-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides

We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce unoccupied in-gap states and occupied resonant defect states within the quasiparticle continuum of the valence band. These defect states give rise to a number of strongly-bound defect excitons and hybridize with excitons of the pristine system, reducing the valley-selective circular dichroism. Our results suggest a pathway to tune spin-valley polarization and other optical properties through defect engineering.

cond-mat.mtrl-sci↗

arXiv2018

Orbital symmetry and the optical response of single-layer monochalcogenides

The absorption spectra of single-layer GaSe and GaTe in the hexagonal phase feature exciton peaks with distinct polarization selectivity. We investigate these distinct features from first-principle calculations using the GW-BSE formalisms. We show that the brightness of the exciton absorption peaks is tunable with the polarization of the light. Due to the symmetry of the bands under z-axis mirror symmetry, the bound exciton states selectively couple to either in-plane or out-of-plane polarization of the light. In particular, for a p-polarized light absorption experiment, the absorption peaks of the s-like excitons emerge at large angle of incidence, while the overall absorbance reduces over the rest of the spectrum.

cond-mat.mtrl-sci↗

arXiv2018

Accelerating Optical Absorption Spectra and Exciton Energy Computation for Nanosystems via Interpolative Separable Density Fitting

We present an efficient way to solve the Bethe-Salpeter equation (BSE), a model for the computation of absorption spectra in molecules and solids that includes electron-hole excitations. Standard approaches to construct and diagonalize the Bethe-Salpeter Hamiltonian require at least $Ø(N_e^5)$ operations, where $N_e$ is proportional to the number of electrons in the system, limiting its application to small systems. Our approach is based on the interpolative separable density fitting (ISDF) technique to construct low rank approximations to the bare and screened exchange operators associated with the BSE Hamiltonian. This approach reduces the complexity of the Hamiltonian construction to $Ø(N_e^3)$ with a much smaller pre-constant. Here, we implement the ISDF method for the BSE calculations within the Tamm-Dancoff approximation (TDA) in the BerkeleyGW software package. We show that ISDF-based BSE calculations in molecules and solids reproduce accurate exciton energies and optical absorption spectra with significantly reduced computational cost.

physics.comp-ph↗

arXiv2018

Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~ 239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~ 154 meV/% for uniaxial tensile strain and ~ 140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in two-dimensional materials.We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

cond-mat.mes-hall↗

arXiv2017

Origins of singlet fission in solid pentacene from an ab initio Green's-function approach

We develop a new first-principles approach to predict and understand rates of singlet fission with an ab initio Green's-function formalism based on many-body perturbation theory. Starting with singlet and triplet excitons computed from a GW plus Bethe-Salpeter equation approach, we calculate the exciton--bi-exciton coupling to lowest order in the Coulomb interaction, assuming a final state consisting of two non-interacting spin-correlated triplets with finite center-of-mass momentum. For crystalline pentacene, symmetries dictate that the only purely Coulombic fission decay from a bright singlet state requires a final state consisting of two inequivalent nearly degenerate triplets of nonzero, equal and opposite, center-of-mass momenta. For such a process, we predict a singlet lifetime of 40 to 150 fs, in very good agreement with experimental data, indicating that this process can dominate singlet fission in crystalline pentacene. Our approach is general and provides a framework for predicting and understanding multiexciton interactions in solids.

cond-mat.mtrl-sci↗

arXiv2017

Hierarchical On-Surface Synthesis of Deterministic Graphene Nanoribbon Heterojunctions

Bottom-up graphene nanoribbon (GNR) heterojunctions are nanoscale strips of graphene whose electronic structure abruptly changes across a covalently bonded interface. Their rational design offers opportunities for profound technological advancements enabled by their extraordinary structural and electronic properties. Thus far the most critical aspect of their synthesis, the control over sequence and position of heterojunctions along the length of a ribbon, has been plagued by randomness in monomer sequences emerging from step-growth copolymerization of distinct monomers. All bottom-up GNR heterojunction structures created so far have exhibited random sequences of heterojunctions and, while useful for fundamental scientific studies, are difficult to incorporate into functional nanodevices as a result. Here we describe a new hierarchical fabrication strategy that allows deterministic growth of bottom-up GNRs that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. Such heterojunctions provide a viable new platform that could be directly used in functional GNR-based device applications at the molecular scale. Our hierarchical GNR fabrication strategy is based on differences in the dissociation energies of C-Br and C-I bonds that allow control over the growth sequence of the block-copolymers from which GNRs are formed, and consequently yields a significantly higher proportion of single-junction GNR heterostructures. Scanning tunnelling spectroscopy and density functional theory calculations confirm that hierarchically-grown heterojunctions between chevron GNR (cGNR) and binaphthyl-cGNR segments exhibit straddling Type I band alignment in structures that are only one atomic layer thick and 3 nm in width.

cond-mat.mtrl-sci↗

arXiv2017

A structure preserving Lanczos algorithm for computing the optical absorption spectrum

We present a new structure preserving Lanczos algorithm for approximating the optical absorption spectrum in the context of solving full Bethe--Salpeter equation without Tamm--Dancoff approximation. The new algorithm is based on a structure preserving Lanczos procedure, which exploits the special block structure of Bethe--Salpeter Hamiltonian matrices. A recently developed technique of generalized averaged Gauss quadrature is incorporated to accelerate the convergence. We also establish the connection between our structure preserving Lanczos procedure with several existing Lanczos procedures developed in different contexts. Numerical examples are presented to demonstrate the effectiveness of our Lanczos algorithm.

math.NA↗

arXiv2017

Band Topology, Orbital Phase Winding, and Selection Rules in Excitonic Physics in Two Dimensions

We show that band topology can dramatically change the photophysics of two-dimensional (2D) semiconductors. For systems in which states near the band extrema are of multiple orbitals character and the spinors describing the orbital components (pseudospins) pick up nonzero winding numbers (topological invariants) around the extremal k-point, the optical strength and nature (i.e., helicity) of the excitonic states are dictated by the optical matrix element winding number, a unique and heretofore unrecognized characteristic. We illustrate these findings in three gapped graphene systems - monolayer graphene with inequivalent sublattices and biased bi- and tri-layer graphene, where the pseudospin textures manifest into a unique optical matrix element winding pattern associated with different valley and photon circular polarization. This winding-number physics leads to novel exciton series and optical selection rules, with each valley hosting multiple bright excitons coupled to light of different helicity. This valley-exciton selective circular dichroism can be unambiguously detected using optical spectroscopy.

cond-mat.mes-hall↗

arXiv2017

Real-space study of the optical absorption in alternative phases of silicon

We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si$_{20}$ crystal phase as a case study. We find that about 83% of the changes in the calculated low-energy absorption in Si$_{20}$ as compared to Si in the diamond structure can be attributed to reducing the differences between the on-site energies of the bonding and anti-bonding orbitals as well as increasing the hopping integrals for specific Si-Si bonds.

cond-mat.mtrl-sci↗

arXiv2017

Discovery of intrinsic ferromagnetism in 2D van der Waals crystals

It has been long hoped that the realization of long-range ferromagnetic order in two-dimensional (2D) van der Waals (vdW) crystals, combined with their rich electronic and optical properties, would open up new possibilities for magnetic, magnetoelectric and magneto-optic applications. However, in 2D systems, the long-range magnetic order is strongly hampered by thermal fluctuations which may be counteracted by magnetic anisotropy, according to the Mermin-Wagner theorem. Prior efforts via defect and composition engineering, and proximity effect only locally or extrinsically introduce magnetic responses. Here we report the first experimental discovery of intrinsic long-range ferromagnetic order in pristine Cr2Ge2Te6 atomic layers by scanning magneto-optic Kerr microscopy. In such a 2D vdW soft ferromagnet, for the first time, an unprecedented control of transition temperature of ~ 35% - 57% enhancement is realized via surprisingly small fields (<= 0.3 Tesla in this work), in stark contrast to the stiffness of the transition temperature to magnetic fields in the three-dimensional regime. We found that the small applied field enables an effective anisotropy far surpassing the tiny magnetocrystalline anisotropy, opening up a sizable spin wave excitation gap. Confirmed by renormalized spin wave theory, we explain the phenomenon and conclude that the unusual field dependence of transition temperature constitutes a hallmark of 2D soft ferromagnetic vdW crystals. Our discovery of 2D soft ferromagnetic Cr2Ge2Te6 presents a close-to-ideal 2D Heisenberg ferromagnet for studying fundamental spin behaviors, and opens the door for exploring new applications such as ultra-compact spintronics.

cond-mat.mes-hall↗