arXiv subjects

Steven L. Hulbert

Publications and source records attributed to Steven L. Hulbert.

4 recordsLinked to original sources

arXiv2026

Surface Platinum Alloying for Passivation of Oxide Interfaces on Superconducting Niobium Films

Dielectric loss arising from two-level systems (TLS) at surfaces and interfaces remains a primary limitation to coherence in superconducting transmon qubits. Niobium (Nb), a widely used material in superconducting quantum circuits, readily forms native oxides under ambient conditions, leading to lossy dielectric interfaces that degrade device performance. Here, a robust and scalable fabrication strategy is demonstrated for chemically stabilizing Nb surfaces and mitigating further oxidation, including protection of both surface and sidewall regions. High-purity Nb films were fabricated with bulk-like superconducting transition temperatures ($T_c = 9.30\pm0.10$) K. We demonstrate that a thin Pt encapsulation layer, deposited after native oxide formation, can be transformed via thermal annealing into a Nb-Pt alloy at the surface. Spectroscopic and microscopic analyses confirm the formation of a chemically stable metallic alloy layer and its ability to suppress further oxide growth. Ab initio simulations elucidate the atomic-scale rearrangement and electronic structure evolution associated with Pt incorporation on native niobium oxide, providing insight into the stabilization mechanism of the alloyed surface. This approach offers a materials pathway for engineering chemically robust Nb interfaces, including sidewalls, toward higher-coherence superconducting qubit architectures."

cond-mat.supr-con↗

arXiv2024

Revealing the Origin and Nature of the Buried Metal-Substrate Interface Layer in Ta/Sapphire Superconducting Films

Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

cond-mat.mtrl-sci↗

arXiv2023

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

cond-mat.mtrl-sci↗

arXiv2023

Chemical profiles of the oxides on tantalum in state of the art superconducting circuits

Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.

cond-mat.mtrl-sci↗