arXiv subjects

Steven L. Richardson

Publications and source records attributed to Steven L. Richardson.

10 recordsLinked to original sources

arXiv2025

Theoretical Investigation of Yield-Enhancing Equilibrium Negatively Ionized Tin-Vacancy Center Preparation Pathways in N-Doped Diamond

The elucidation of the mechanism of Sn$V^-$ formation in diamond is especially important as the Sn$V^-$ color center has the potential to be a superior single-photon emitter when compared to the N$V$ and to other Group IV color centers. The typical formation of the Sn$V$ involves placing Sn in diamond by ion implantation, but the formation of a charged Sn$V$ species requires an additional complication. This complication is related to the energy cost associated with electronic transitions within the host diamond. Effectively, producing the Sn$V^-$ charge state using an electron obtained from a band edge of the host diamond is less energetically favorable than having the Sn$V^-$ receive an electron from a neighboring donor dopant. Among donor dopants, substitutional N (N$_\text{C}$) is always present in even the purest synthetic or natural diamond sample. The mechanism of electron donation by N$_\text{C}$ has been proposed by Collins for charging the N$V$ in diamond and it has been used to interpret many experimental results. Therefore, in this paper we use DFT to explore the pathways for the formation of the Sn$V^-$ charge state due to electron donation arising from the presence of N$_\text{C}$ in the host diamond. Explicitly, defect concentrations are calculated in equilibrium in each of the explored pathways to determine the yield of the Sn$V^-$ throughout each of the pathways. The importance of our work is to suggest experimental ways of enhancing the yield of charged states like the Sn$V^-$ in diamond for transformative applications in optoelectronics and quantum information.

cond-mat.mtrl-sci↗

arXiv2024

Computing Using Shallow NV-Center Charges in Diamond

The static electric dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide-bandgap semiconductors has recently emerged as a means of realizing a quantum science platform through optically controllable, long-range interactions between defects in the solid state. In this work, we generalize DAPs to consider arbitrary dopant populations and demonstrate that the charge of the NV center in diamond is well suited for quantum science. Explicitly, we leverage experimental results [see Z. Yuan et al., PRR 2, 033263 (2020)] to show that shallow NV centers can be efficiently initialized to a given relative population of the negative and neutral charge states and that modulating the surface termination would allow for control of the timescale over which the initialization and subsequent computations would occur. Furthermore, we argue that the observation of electroluminescence from the neutral charge state of the NV center [see N. Mizuochi et al., Nat. Photon. 6, 299 (2012)], but not from the negative charge state, implies the ability to interface with the NV center's charge in a manner analogous to the spin interface enabled by the spin-state dependent fluorescence of the NV center.

cond-mat.mtrl-sci↗

arXiv2023

Charge-State Stability of Color Centers in Wide-Bandgap Semiconductors

The NV$^-$ color center in diamond has been extensively investigated for quantum sensing, computation, and communication applications. Nonetheless, charge-state decay from the NV$^-$ to its neutral counterpart the NV$^0$ detrimentally affects the robustness of the NV$^-$ center and remains to be fully overcome. In this work, we provide an $ab~initio$ formalism for accurately estimating the rate of charge-state decay of color centers in wide-bandgap semiconductors. Our formalism employs density functional theory calculations in the context of thermal equilibrium. We illustrate the method using the transition of NV$^-$ to NV$^0$ in the presence of substitutional N [see Z. Yuan $et~al$., PRR 2, 033263 (2020)].

cond-mat.mtrl-sci↗

arXiv2023

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a wide-bandgap semiconductor is nonetheless a crucial quantity in determining the operation of semiconductor devices and the performance of solid-state single-photon emitters embedded within the semiconductor devices. In this work we accurately compute the average electric field measured at the location of N$V^-$ charged defects for the substitutional N (N$_\text{C}$) concentration of $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ for the commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve this result by evaluating the leading-order contribution to the electric field far away from the surface, which comes from the N$_\text{C}$ defects that induce the ionization of the N$V^-$. Our results use density-functional theory (DFT) and the principle of band bending. Our work has the potential to aid both in the prediction of the functioning of semiconductor devices and in the prediction and correction of the spectral diffusion that often plagues the optical frequencies of solid-state single-photon emitters upon repeated photoexcitation measurements. Our results for the timescales involved in thermally driven charge transfer also have the potential to aid in investigations of charge dynamics.

cond-mat.mtrl-sci↗

arXiv2021

Calculating the Hyperfine Tensors for Group-IV Impurity-Vacancy Centers in Diamond: A Hybrid Density-Functional Theory Approach

The hyperfine interaction is an important probe for understanding the structure and symmetry of defects in a semiconductor. Density-functional theory has shown that it can provide useful first-principles predictions for both the hyperfine tensor and the hyperfine constants that arise from it. Recently there has been great interest in using group-IV impurity-vacancy color centers X$V^-$ (where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy) for important applications in quantum computing and quantum information science. In this paper, we have calculated the hyperfine tensors for these X$V^-$ color centers using the HSE06 screened Hartree-Fock hybrid exchange-correlation functional with the inclusion of core electron spin polarization. We have compared our results to calculations which only use the PBE exchange-correlation functional without the inclusion of core electron spin polarization and we have found our results are in very good agreement with available experimental results. Finally, we have theoretically shown that these X$V^-$ color centers exhibit a Jahn-Teller distortion which explains the observed anisotropic distribution of the hyperfine constants among the neighboring $^{13}$C nuclear spins.

cond-mat.mtrl-sci↗

arXiv2020

How carbon vacancies can affect the properties of group IV color centers in diamond: A study of thermodynamics and kinetics

Recently there has been much interest in using Group IV elements from the Periodic Table to fabricate and study X$V$ color centers in diamond where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy. These Group IV color centers have a number of interesting spin and optical properties which could potentially make them better candidates than N$V^-$ centers for important applications in quantum computing and quantum information processing. Unfortunately, the very same ion implantation process that is required to create these X$V$ color centers in diamond necessarily also produces many carbon vacancies ($V_{\rm C}$) which can form complexes with these color centers ($V_{\rm C}-$X$V$) that can dramatically affect the properties of the isolated X$V$ color centers. The main focus of this work is to use density-functional theory (DFT) to study the thermodynamics and kinetics of the formation of these $V_{\rm C}-$X$V$ complexes and to suggest experimental ways to impede this process such as varying the Fermi level of the host diamond material through chemical doping or applying an external electrical bias. We also include a discussion of how the simple presence of many $V_{\rm C}$ can negatively impact the spin coherence times ($T_2$) of Group IV color centers through the presence of acoustic phonons.

cond-mat.mtrl-sci↗

arXiv2010

Equilibrium structure and vibrational spectra of sila-adamantane

The recent synthesis of a four-fold silylated sila-adamantane molecule (C$_{24}$H$_{72}$Si$_{14}$, T$_d$), [J. Fischer, J. Baumgartner, and C. Marschner, {\it Science} {\bf 310,} (2005) 825] is the first attempt of making the silicon analogue of adamantane. It has adamantane-like Si$_{10}$ core, capped by methyl and sily-methyl ligands. We report its electronic structure, vibrational spectrum, and the infra-red and Raman spectra calculated within the density functional formalism using large polarized Gaussian basis sets. The properties of sila-adamantane are compared with exact silicon analogue Si10H16 of adamantane. Results show that replacing hydrogens in Si10H16, by methyl and silymethyl ligands results in expansion of the Si10 core and results in large number of peaks in the Raman spectrum. The Si-C stretch at 664 1/cm and methyl deformations frequencies compare well with recent measurements of vibrational frequencies of methylated silicon surface.

physics.chem-ph↗

arXiv2004

Incommensurate Transverse Anisotropy Induced by Disorder and Spin-Orbit-Vibron Coupling in Mn12-acetate

It has been shown within density-functional theory that in Mn$_{12}$-acetate there are effects due to disorder by solvent molecules and a coupling between vibrational and electronic degrees of freedom. We calculate the in-plane principal axes of the second-order anisotropy caused by the second effect and compare them with those of the fourth-order anisotropy due to the first effect. We find that the two types of the principal axes are not commensurate with each other, which results in a complete quenching of the tunnel-splitting oscillation as a function of an applied transverse field.

cond-mat.mtrl-sci↗

arXiv2003

Electronic structure and rebonding in the onion-like As@Ni12@As20 cluster

We present the first ab initio study of the geometry, electronic structure, charged states, bonding and vibrational modes of the recently synthesized fullerene-like As@Ni12@As20 cluster which has icosahedral point symmetry [Science, 300, 778 (2003)]. We show that the molecule is vibrationally stable and will be electronically most stable in its -3 oxidation state in the condensed phase and in -2 state in the gas phase. We examine the bonding in this unusually structured molecule from charge transfer between atoms, infrared and Raman spectra, and charge density isosurfaces.

cond-mat.mtrl-sci↗

arXiv2003

DFT calculation of the intermolecular exchange interaction in the magnetic Mn$_4$ dimer

The dimeric form of the single-molecule magnet [Mn$_4$O$_3$Cl$_4$(O$_2$CEt)$_3$(py)$_3$]$_2$ recently revealed interesting phenomena: no quantum tunneling at zero field and tunneling before magnetic field reversal. This is attributed to substantial antiferromagnetic exchange interaction between different monomers. The intermolecular exchange interaction, electronic structure and magnetic properties of this molecular magnet are calculated using density-functional theory within generalized-gradient approximation. Calculations are in good agreement with experiment.

cond-mat.mtrl-sci↗