arXiv subjects

Steven Prawer

Publications and source records attributed to Steven Prawer.

31 records · Page 2Linked to original sources

arXiv2013

Direct measurement and modelling of internal strains in ion-implanted diamond

We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.

cond-mat.mtrl-sci↗

arXiv2012

Phonon-induced dephasing of chromium colour centres in diamond

We report on the coherence properties of single photons from chromium-based colour centres in diamond. We use field-correlation and spectral lineshape measurements to reveal the interplay between slow spectral wandering and fast dephasing mechanisms as a function of temperature. We show that the zero-phonon transition frequency and its linewidth follow a power-law dependence on temperature indicating that the dominant fast dephasing mechanisms for these centres are direct electron-phonon coupling and phonon-modulated Coulomb coupling to nearby impurities. Further, the observed reduction in the quantum yield for photon emission as a function of temperature is consistent with the opening of additional nonradiative channels through thermal activation to higher energy states predominantly and indicates a near-unity quantum efficiency at 4 K.

cond-mat.mes-hall↗

arXiv2010

Processing of Photonic Crystal Nanocavity for Quantum Information in Diamond

The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme chemical and mechanical properties of this material. The present work summarizes the state of the art in the realization of PC's in diamond. It is based on the creation of a free standing diamond membrane into which the desired nano-sized patterns are milled by the use of Focused-Ion-Beam (FIB). The optimal fabrication-oriented structure parameters are predicted by simulations. The milling strategies, the method of formation the diamond membrane, recipes for dielectric material-manipulation in FIB and optical characterization constraints are discussed in conjunction with their implication on PC cavity design. The thus produced structures are characterized via confocal photoluminescence.

physics.optics↗

arXiv2010

Flux noise in ion-implanted nanoSQUIDs

Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 nm to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 microphy_{0}/Hz^{0.5} at 10^{4} Hz. The scaling of the flux noise properties and focusing effect of the SQUID with the hole size were examined. The observed low-frequency flux noise of different devices were compared with the contribution due to the spin fluctuation of defects during FIB processing and the thermally activated flux hopping in the SQUID washer.

cond-mat.supr-con↗

arXiv2010

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.

cond-mat.mtrl-sci↗

arXiv2010

Chromium single photon emitters in diamond fabricated by ion implantation

Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a ZPL centered at 749 nm, FWHM of 4 nm, an extremely short lifetime of ~1 ns, and a count rate of 500 kcounts/s. By combining the polarization measurements and the vibronic spectra, a model of the center has been proposed consisting of one interstitial chromium atom with a transition dipole along one of the <100> directions.

cond-mat.mtrl-sci↗

arXiv2009

A new, enhanced diamond single photon emitter in the near infra-red

Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex.

cond-mat.mtrl-sci↗

arXiv2008

Design of flexible ultrahigh-Q microcavities in diamond-based photonic crystal slabs

We design extremely flexible ultrahigh-Q diamond-based double-heterostructure photonic crystal slab cavities by modifying the refractive index of the diamond. The refractive index changes needed for ultrahigh-Q cavities with $Q ~ 10^7$, are well within what can be achieved ($Δn \sim 0.02$). The cavity modes have relatively small volumes $V<2 (λ/n)^3$, making them ideal for cavity quantum electro-dynamic applications. Importantly for realistic fabrication, our design is flexible because the range of parameters, cavity length and the index changes, that enables an ultrahigh-Q is quite broad. Furthermore as the index modification is post-processed, an efficient technique to generate cavities around defect centres is achievable, improving prospects for defect-tolerant quantum architectures.

quant-ph↗

arXiv2007

Room temperature triggered single-photon source in the near infrared

We report the realization of a solid-state triggered single-photon source with narrow emission in the near infrared at room temperature. It is based on the photoluminescence of a single nickel-nitrogen NE8 colour centre in a chemical vapour deposited diamond nanocrystal. Stable single-photon emission has been observed in the photoluminescence under both continuous-wave and pulsed excitations. The realization of this source represents a step forward in the application of diamond-based single-photon sources to Quantum Key Distribution (QKD) under practical operating conditions.

quant-ph↗

arXiv2006

Coherent Population Trapping of Single Spins in Diamond Under Optical Excitation

Coherent population trapping is demonstrated in single nitrogen-vacancy centers in diamond under optical excitation. For sufficient excitation power, the fluorescence intensity drops almost to the background level when the laser modulation frequency matches the 2.88 GHz splitting of the ground states. The results are well described theoretically by a four-level model, allowing the relative transition strengths to be determined for individual centers. The results show that all-optical control of single spins is possible in diamond.

quant-ph↗

arXiv2006

Coherent Population Trapping in Diamond N-V Centers at Zero Magnetic Field

Coherent population trapping at zero magnetic field was observed for nitrogen-vacancy centers in diamond under optical excitation. This was measured as a reduction in photoluminescence when the detuning between two excitation lasers matched the 2.88 GHz crystal-field splitting of the color center ground states. This behavior is highly sensitive to strain, which modifies the excited states, and was unexpected following recent experiments demonstrating optical readout of single nitrogen-vacancy electron spins based on cycling transitions. These results demonstrate for the first time that three-level Lambda configurations suitable for proposed quantum information applications can be realized simultaneously for all four orientations of nitrogen-vacancy centers at zero magnetic field.

cond-mat.mes-hall↗

arXiv2005

Quantum gate for Q switching in monolithic photonic bandgap cavities containing two-level atoms

Photonic bandgap cavities are prime solid-state systems to investigate light-matter interactions in the strong coupling regime. However, as the cavity is defined by the geometry of the periodic dielectric pattern, cavity control in a monolithic structure can be problematic. Thus, either the state coherence is limited by the read-out channel, or in a high Q cavity, it is nearly decoupled from the external world, making measurement of the state extremely challenging. We present here a method for ameliorating these difficulties by using a coupled cavity arrangement, where one cavity acts as a switch for the other cavity, tuned by control of the atomic transition.

quant-ph↗

arXiv2005

Quantum-Dot Cellular Automata using Buried Dopants

The use of buried dopants to construct quantum-dot cellular automata is investigated as an alternative to conventional electronic devices for information transport and elementary computation. This provides a limit in terms of miniaturisation for this type of system as each potential well is formed by a single dopant atom. As an example, phosphorous donors in silicon are found to have good energy level separation with incoherent switching times of the order of microseconds. However, we also illustrate the possibility of ultra-fast quantum coherent switching via adiabatic evolution. The switching speeds are numerically calculated and found to be 10's of picoseconds or less for a single cell. The effect of decoherence is also simulated in the form of a dephasing process and limits are estimated for operation with finite dephasing. The advantages and limitations of this scheme over the more conventional quantum-dot based scheme are discussed. The use of a buried donor cellular automata system is also discussed as an architecture for testing several aspects of buried donor based quantum computing schemes.

cond-mat.mes-hall↗