arXiv subjects

Su Ying Quek

Publications and source records attributed to Su Ying Quek.

At least 19 recordsLinked to original sources

arXiv2026

Observation and Control of the Magnetic Photogalvanic Effect from Strongly Bound Excitons

Photogalvanic effects arising from the quantum geometry of noncentrosymmetric materials are promising for next-generation light-harvesting devices that do not require a built-in electric field. Recent theories predict photogalvanic currents generated in magnetic systems with spin-dependent symmetry breaking as well as by bound exciton states, allowing for potential magnetic field control of the photoresponse and enhanced detection of deep sub-gap signals, respectively. We demonstrate the magnetic photogalvanic effect in a bilayer CrI3 tunnel junction with both magnetic field switching and electric field tuning of interlayer symmetry. By controlling for the polarization and energy of light illumination, we disentangle the shift and injection current contributions and find that the peak response occurs under resonant excitation of strongly bound excitons in CrI3. Our results can be captured within a many-body framework of the photogalvanic effect, while our devices function as tunable, multispectral helicity- and polarization-sensitive detectors that highlight the potential of 2D magnets for future optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Defect-Mediated Phase Engineering of 2D Ag at the Graphene/SiC Interface

Atomically thin silver (Ag) films offer unique opportunities in plasmonic, quantum optics, and energy harvesting, yet conventional growth methods struggle to achieve structural control at the monolayer limit. Here, we demonstrate phase-selective synthesis of large-area, crystalline 2D Ag films via defect-engineered confinement heteroepitaxy (CHet) at the epitaxial graphene/silicon carbide (EG/SiC) interface. By tuning graphene growth and post-growth defect introduction, two distinct Ag phases are achieved with disparate properties: a nearly commensurate Ag(1) lattice stabilized by vacancy and line defects in epitaxial graphene, and a denser Ag(2) phase preferentially grown with sp3-rich zero-layer graphene. Structural and spectroscopic characterization confirm lattice registry with the SiC substrate, while theoretical calculations reveal a thermodynamic preference for Ag(2) but an easier nucleation for Ag(1). Both phases are found to be semiconducting, with the Ag(2) phase exhibiting slightly enhanced n-doping of graphene. Notably, nonlinear optical measurements reveal a three-order magnitude difference in second-order susceptibility between the two phases, demonstrating promise for phase-tunable 2D metals in reconfigurable optoelectronic and metamaterial platforms.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Defects in 2D Transition Metal Dichalcogenides for Terahertz Technologies

Substitutional transition metal (TM) point defects have recently been controllably introduced in two-dimensional (2D) transition metal dichalcogenides. We identify quantum defect candidates through a first-principles materials discovery approach with 25 TM elements substituting Mo and W in 2D MoS2 and WSe2, respectively. We elucidate trends in the charge transition levels for these 50 systems and report the existence of defects with spin-triplet ground states and a zero-field splitting (ZFS) in the terahertz (THz) regime, in contrast to typical gigahertz values. These defects can couple to resonant near-infrared radiation, providing a route to applications as high-fidelity qubits controlled by spin-dependent optical transitions. The THz ZFS implies that these high-fidelity operations can take place at higher temperatures compared to the case for GHz qubits. Our results also point toward the possibility of realising a single-photon THz emitter. This work broadens the scope of quantum defects, highlighting the opportunities for next generation THz quantum technologies - an area of growing interest given the rapid advancement in the development of THz sources and detectors.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Geometric Advantage of the Correlated Exciton State in Non-linear Optics

The concept of quantum geometry for single-particle states has revolutionized our interpretation of several emergent properties in condensed matter. However, a description of the quantum geometry for interacting particles and an understanding of its implications are lacking. Here, we show that inherent in the non-linear optical response is a quantum geometry of the correlated electron-hole state (exciton) that arises from the interplay between geometry and interactions - distinct from the quantum geometric properties of the individual electron or hole states. We demonstrate using first principles calculations that this quantum many-body geometry significantly enhances the non-linear optical response in systems with strong excitonic effects. In the case of shift currents, the quantum many-body geometric term arises in the many-body shift vector and can be interpreted as a many-body analogue of the Berry phase. This work lays the foundation to study the quantum geometry of correlated states in experimentally observable settings.

cond-mat.mtrl-sci↗

arXiv2024

Exciton-Enhanced Spontaneous Parametric Down-Conversion in Two-Dimensional Crystals

We show that excitonic resonances and interexciton transitions can enhance the probability of spontaneous parametric down-conversion, a second-order optical response which generates entangled photon pairs. We benchmark our ab initio many-body calculations using experimental polar plots of second harmonic generation in NbOI$_2$, clearly demonstrating the relevance of excitons in the nonlinear response. A strong double-exciton resonance in 2D NbOCl$_2$ leads to giant enhancement in the second order susceptibility. Our work paves the way for the realization of efficient ultrathin quantum light sources.

physics.comp-ph↗

arXiv2022

Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2

Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices.

cond-mat.mtrl-sci↗

arXiv2021

Effects of Steric Factors on Molecular Doping to MoS$_2$

Surface functionalization of two-dimensional (2D) materials with organic electron donors (OEDs) is a powerful method to modulate the electronic properties of the material. However, our fundamental understanding of the doping mechanism is largely limited to the categorization of molecular dopants as n- or p-type based on the relative position of the molecule's redox potential in relation to the Fermi level of the 2D host. Our limited knowledge about the impact of factors other than the redox properties of the molecule on doping makes it challenging to controllably use molecules to dope 2D materials and design new OEDs. Here, we functionalize monolayer MoS$_2$ using two molecular dopants, Me- and $^t$Bu-OED, which have the same redox potential but different steric properties to probe the effects of molecular size on the doping level of MoS$_2$. We show that, for the same functionalization conditions, the doping powers of Me- and $^t$Bu-OED are 0.22 - 0.44 and 0.11 electrons per molecule, respectively, demonstrating that the steric properties of the molecule critically affect doping levels. Using the stronger dopant, Me-OED, a carrier density of 1.10 +/- 0.37 x 10$^{14}$ cm$^{-2}$ is achieved in MoS$_2$, the highest doping level to date for MoS$_2$ using surface functionalization. Overall, we establish that tuning of the steric properties of the dopant is essential in the rational design of molecular dopants.

cond-mat.mtrl-sci↗

arXiv2021

Photo-Physical Characteristics of Boron Vacancy-Derived Defect Centers in Hexagonal Boron Nitride

Single photon emitter (SPE) sources are important building blocks for photonics-based quantum technologies. Recently, the highly bright and versatile SPEs from the two-dimensional insulator material hexagonal boron nitride (hBN) have attracted significant research interest. However, due to the variability of emitter species and properties, an exact correlation between the underlying atomistic structures and their photo-physical properties is still lacking. In this work, we study six boron vacancy-derived defect centers in hBN ($V_B^-$, $V_B$+$H$, $V_{B2}$, $V_BC_N$, $V_BC_N^-$, and $V_BC_NC_N$) using advanced first principles techniques, characterizing their quasiparticle defect levels, optical spectra and excitation energies, and magneto-resonance properties. These defects have been chosen because of their relatively low formation energies, and, importantly, because they are amenable to intentional creation under experimental conditions. We establish the correlation between the underlying defect atomic structure and their photo-physical properties, thus facilitating the identification of SPEs that have already been observed in experiments. Our results lead to clear insights into very recent experiments where hBN SPEs can be controlled intentionally. On the other hand, our results also serve as guidelines for the bottom-up design of defect emitter centers in hBN for target applications that require specific defect properties, such as emission in the telecom wavelength, optical addressability and high radiative decay rates. This work thus provides a comprehensive understanding of the photo-physical characteristics of $V_B$-derived defect emitting centers, aiding in their identification and manipulation for tailored applications.

cond-mat.mes-hall↗

arXiv2021

Valley-Filling Instability and Critical Magnetic Field for Interaction-Enhanced Zeeman Response in Doped WSe$_2$ Monolayers

Carrier-doped transition metal dichalcogenide (TMD) monolayers are of great interest in valleytronics due to the large Zeeman response (g-factors) in these spin-valley-locked materials, arising from many-body interactions. We develop an \textit{ab initio} approach based on many-body perturbation theory to compute the interaction-enhanced g-factors in carrier-doped materials. We show that the g-factors of doped WSe$_2$ monolayers are enhanced by screened exchange interactions resulting from magnetic-field-induced changes in band occupancies. Our interaction-enhanced g-factors $g^*$ agree well with experiment. Unlike traditional valleytronic materials such as silicon, the enhancement in g-factor vanishes beyond a critical magnetic field $B_c$ achievable in standard laboratories. We identify ranges of $g^*$ for which this change in g-factor at $B_c$ leads to a valley-filling instability and Landau level alignment, which is important for the study of quantum phase transitions in doped TMDs. We further demonstrate how to tune the g-factors and optimize the valley-polarization for the valley Hall effect.

physics.comp-ph↗

arXiv2021

Tunable Two-Dimensional Group-III Metal Alloys

Chemically stable quantum-confined 2D metals are of interest in next-generation nanoscale quantum devices. Bottom-up design and synthesis of such metals could enable the creation of materials with tailored, on-demand, electronic and optical properties for applications that utilize tunable plasmonic coupling, optical non-linearity, epsilon-near-zero behavior, or wavelength-specific light trapping. In this work, we demonstrate that the electronic, superconducting and optical properties of air-stable two-dimensional metals can be controllably tuned by the formation of alloys. Environmentally robust large-area two-dimensional InxGa1-x alloys are synthesized by Confinement Heteroepitaxy (CHet). Near-complete solid solubility is achieved with no evidence of phase segregation, and the composition is tunable over the full range of x by changing the relative elemental composition of the precursor. The optical and electronic properties directly correlate with alloy composition, wherein the dielectric function, band structure, superconductivity, and charge transfer from the metal to graphene are all controlled by the indium/gallium ratio in the 2D metal layer.

cond-mat.mtrl-sci↗

arXiv2020

Quasiparticle Levels at Large Interface Systems from Many-body Perturbation Theory: the XAF-GW method

We present a fully ab initio approach based on many-body perturbation theory in the GW approximation, to compute the quasiparticle levels of large interface systems without significant covalent interactions between the different components of the interface. The only assumption in our approach is that the polarizability matrix (chi) of the interface can be given by the sum of the polarizability matrices of individual components of the interface. We show analytically, using a two-state hybridized model, that this assumption is valid even in the presence of interface hybridization to form bonding and anti-bonding states, up to first order in the overlap matrix elements involved in the hybridization. We validate our approach by showing that the band structure obtained in our method is almost identical to that obtained using a regular GW calculation for bilayer black phosphorus, where interlayer hybridization is significant. Significant savings in computational time and memory are obtained by computing chi only for the smallest sub-unit cell of each component, and expanding (unfolding) the chi matrix to that in the unit cell of the interface. To treat interface hybridization, the full wavefunctions of the interface are used in computing the self-energy. We thus call the method XAF-GW (X: eXpand-chi, A: Add-chi, F: Full wavefunctions). Compared to GW-embedding type approaches in the literature, the XAF-GW approach is not limited to specific screening environments or to non-hybridized interface systems. XAF-GW can also be applied to systems with different dimensionalities, as well as to Moire superlattices such as in twisted bilayers. We illustrate the generality and usefulness of our approach by applying it to self-assembled PTCDA monolayers on Au(111) and Ag(111), and PTCDA monolayers on graphite-supported monolayer WSe2, where good agreement with experiment is obtained.

cond-mat.mtrl-sci↗

arXiv2020

Spin-dependent Tunneling Barriers in CoPc/VSe2 from Many-Body Interactions

Mixed-dimensional magnetic heterostructures are intriguing, newly available platforms to explore quantum physics and its applications. Using state-of-the-art many-body perturbation theory, we predict the energy level alignment for a self-assembled monolayer of cobalt phthalocyanine (CoPc) molecules on magnetic VSe 2 monolayers. The predicted projected density of states on CoPc agrees with experimental scanning tunneling spectra. Consistent with experiment, we predict a shoulder in the unoccupied region of the spectra that is absent from mean-field calculations. Unlike the nearly spin-degenerate gas phase frontier molecular orbitals, the tunneling barriers at the interface are spin-dependent, a finding of interest for quantum information and spintronics applications. Both the experimentally observed shoulder and the predicted spin-dependent tunneling barriers originate from many-body interactions in the interface-hybridized states. Our results showcase the intricate many-body physics that governs the properties of these mixed-dimensional magnetic heterostructures, and suggests the possibility of manipulating the spin-dependent tunneling barriers through modifications of interface coupling.

cond-mat.mtrl-sci↗

arXiv2020

Isolated Flat Bands and Physics of Mixed Dimensions in a 2D Covalent Organic Framework

We demonstrate that it is possible to rationally incorporate both an isolated flat band, and the physics of zero dimensions (0D), one dimension (1D), and two dimensions (2D) in a single 2D material. Such unique electronic properties are present in a recently synthesized 2D covalent organic framework (COF), where "I"-shaped building blocks and "T"-shaped connectors result in quasi-1D chains that are linked by quasi-0D bridge units arranged in a stable 2D lattice. The lowest unoccupied conduction band is an isolated flat band, and electron-doping gives rise to novel quantum phenomena, such as magnetism and Mott insulating phases. The highest occupied valence band arises from wave functions in the quasi-1D chains. Examples of mixed dimensional physics are illustrated in this system. The strong electron-hole asymmetry in this material results in a large Seebeck coefficient, while the quasi-1D nature of the chains leads to linear dichroism, in conjunction with strongly bound 2D excitons. We elucidate strategies to design and optimize 2D COFs to host both isolated flat bands and quantum-confined 1D subsystems. The properties of the 2D COF discussed here provide a taste of the intriguing possibilities in this open research field.

cond-mat.mes-hall↗

arXiv2020

Hydrogen adatoms on graphene: the role of hybridization and lattice distortion

Hydrogen adatoms on graphene are investigated using DFT and analytical approaches. We demonstrate that the level of lattice deformation due to the hydrogen adsorption does not substantially change the coupling between the graphene $p_{z}$ orbitals. The hybridization primarily takes place between the adsorbate's s orbital and the graphene $p_{z}$ orbitals. We also show that the impurity interaction with the graphene atoms is limited to only a few nearest neighbors, allowing us to construct a compact TB model for the impurity-graphene system with an arbitrary impurity distribution. The complexity of our model scales with the number of impurities, not their separation, making it especially useful in the study of low impurity concentrations.

cond-mat.mtrl-sci↗

arXiv2020

Near Unity Molecular Doping Efficiency in Monolayer MoS2

Surface functionalization with organic electron donors (OEDs) is an effective doping strategy for two-dimensional (2D) materials, which can achieve doping levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the doping efficiencies of OEDs have largely been unmeasured, which is in stark contrast to their precision syntheses and tailored redox potentials. Here, using monolayer MoS2 as a model system and an organic reductant based on 4,4-bipyridine (DMAP-OED) as a strong organic dopant, we establish that the doping efficiency of DMAP-OED to MoS2 is in the range of 0.63 to 1.26 electrons per molecule. We also achieve the highest doping level to date in monolayer MoS2 by surface functionalization and demonstrate that DMAP-OED is a stronger dopant than benzyl viologen, which was the previous best OED dopant. The measured range of the doping efficiency is in good agreement with the values predicted from first-principles calculations. Our work provides a basis for the rational design of OEDs for high-level doping of 2D materials.

cond-mat.mtrl-sci↗

arXiv2020

Dielectric Screening by 2D Substrates

Two-dimensional (2D) materials are increasingly being used as active components in nanoscale devices. Many interesting properties of 2D materials stem from the reduced and highly non-local electronic screening in two dimensions. While electronic screening within 2D materials has been studied extensively, the question still remains of how 2D substrates screen charge perturbations or electronic excitations adjacent to them. Thickness-dependent dielectric screening properties have recently been studied using electrostatic force microscopy (EFM) experiments. However, it was suggested that some of the thickness-dependent trends were due to extrinsic effects. Similarly, Kelvin probe measurements (KPM) indicate that charge fluctuations are reduced when BN slabs are placed on SiO$_2$, but it is unclear if this effect is due to intrinsic screening from BN. In this work, we use first principles calculations to study the fully non-local dielectric screening properties of 2D material substrates. Our simulations give results in good qualitative agreement with those from EFM experiments, for hexagonal boron nitride (BN), graphene and MoS$_2$, indicating that the experimentally observed thickness-dependent screening effects are intrinsic to the 2D materials. We further investigate explicitly the role of BN in lowering charge potential fluctuations arising from charge impurities on an underlying SiO$_2$ substrate, as observed in the KPM experiments. 2D material substrates can also dramatically change the HOMO-LUMO gaps of adsorbates, especially for small molecules, such as benzene. We propose a reliable and very quick method to predict the HOMO-LUMO gap of small physisorbed molecules on 2D and 3D substrates, using only the band gap of the substrate and the gas phase gap of the molecule.

cond-mat.mtrl-sci↗

arXiv2020

Valley Zeeman effect and Landau levels in Two-Dimensional Transition Metal Dichalcogenides

This paper presents a theoretical description of both the valley Zeeman effect (g-factors) and Landau levels in two-dimensional H-phase transition metal dichalcogenides (TMDs) using the Luttinger-Kohn approximation with spin-orbit coupling. At the valley extrema in TMDs, energy bands split into Landau levels with a Zeeman shift in the presence of a uniform out-of-plane external magnetic field. The Landau level indices are symmetric in the $K$ and $K'$ valleys. We develop a numerical approach to compute the single band g-factors from first principles without the need for a sum over unoccupied bands. Many-body effects are included perturbatively within the GW approximation. Non-local exchange and correlation self-energy effects in the GW calculations increase the magnitude of single band g-factors compared to those obtained from density functional theory. Our first principles results give spin- and valley-split Landau levels, in agreement with recent optical experiments. The exciton g-factors deduced in this work are also in good agreement with experiment for the bright and dark excitons in monolayer WSe$_2$, as well as the lowest-energy bright excitons in MoSe$_2$-WSe$_2$ heterobilayers with different twist angles.

cond-mat.mtrl-sci↗

arXiv2019

Graphene-mediated interaction between adsorbed impurities

Interaction between adsorbed atoms in graphene is studied using a combination of DFT and the path integral formalism. Our results reveal a complex non-monotonic interaction profile. We show that the strength and sign of the interaction are dictated by the arrangement of impurities, as well as the system doping. These findings can be used to interpret the complex behavior of impurities in experimentally realized systems, as well as other classes of impurities, such as C substitutions in graphene.

cond-mat.mes-hall↗