Topological Weyl Phase of an Ideal Spin-Gapless Semiconductor KCrSe
The coexistence of topological and spin-polarized electronic states within a single material platform provides an attractive route toward emergent quantum phenomena and spintronic functionalities. However, materials simultaneously exhibiting spin-gapless semiconducting (SGS) behavior and Weyl semimetallicity remain exceedingly rare. Here, using first-principles calculations, we identify the half-Heusler compound KCrSe as an ideal spin-gapless Weyl semimetal. Transport calculations reveal a weak temperature dependence of the longitudinal conductivity and relatively small Seebeck coefficients, providing further evidence of its SGS nature. KCrSe hosts a single pair of Weyl nodes-the minimum number permitted in a Weyl semimetal-located in close proximity to the Fermi level (E$_\text{F}$), resulting in exceptionally clean bulk and surface electronic spectra. The nontrivial Berry curvature associated with these Weyl nodes gives rise to sizable anomalous transport responses, including an anomalous Hall conductivity of $\sigma_{xy}^{A}\sim 90.76~\mathrm{S\,cm^{-1}}$ and an anomalous Nernst conductivity of $\alpha_{xy}^{A}\sim 0.15~\mathrm{A\,m^{-1}K^{-1}}$ at E$_\text{F}$, with substantially enhanced values at lower energies. The combination of an ideal Weyl topology, fully spin-polarized low-energy states, and finite anomalous transport establishes KCrSe as a promising platform for designing high-efficiency topological spintronic devices.