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Subhamoy Sahoo

Publications and source records attributed to Subhamoy Sahoo.

6 recordsLinked to original sources

Mask-free fast patterning of organic light-emitting diode pixels using laser-assisted close-space sublimation

Existing patterning processes for organic light-emitting diode displays offer micrometer-scale precision but are constrained by long processing times for large-area substrates. In this work, we study a fast growth method for patterned organic film deposition, aimed at applications including active-matrix organic light-emitting diode displays. The approach employs a specially engineered donor substrate in a close-space sublimation configuration combined with laser heating. The donor substrate incorporates spatially patterned absorber and reflector layers that enable selective, one-step or two-step transfer of organic material onto a receiver substrate. We analyze the optical response and heat-transfer dynamics that govern the selective transfer mechanism and demonstrate precise pixel patterning with micrometer-scale spatial fidelity. The reliability and practical applicability of the method are validated by fabricating light-emitting diode devices by using this rapid transfer process and benchmarking their performance against devices produced via conventional vacuum thermal evaporation. The resulting devices exhibit comparable optoelectronic performance, confirming the robustness and technological relevance of the proposed strategy for scalable fabrication of patterned organic light-emitting diodes for display application.

physics.optics

Charge Tunable Optical Nonlinearity of Moir\'e Exciton-Polaritons

Transition metal dichalcogenides represent a versatile platform to study strong light-matter interactions based on excitons and electrons in ordered lattices. Twist-engineering of moir\'e structures further enables the manipulation of the polaritonic nonlinearities via engineering the exciton landscape on the nanoscale. In this work, we demonstrate in-situ control of the optical saturation-based nonlinearity of moir\'e exciton-polaritons by phase space restriction via charge doping. Strong exciton-photon coupling is established in a gate-controllable MoTe$_2$-MoSe$_2$ heterobilayer, embedded in a spectrally-tunable open cavity. A small gate voltage can effectively lower the necessary polariton density by one order of magnitude to achieve a similar nonlinear saturation effect as in the charge-neutral case. Our microscopic description successfully explains the observed phenomena in the framework of Pauli blocking for the moir\'e superlattices with charge preoccupation.

cond-mat.mes-hall

Deterministic Transferable Planar Dielectric Mirrors for Investigating Strong Light-Matter Coupling

Optical cavities play a central role in photonic and quantum technologies by enhancing light-matter interactions. In semiconductor microcavities, achieving high quality (Q) factors typically relies on sophisticated epitaxial growth techniques, such as molecular beam epitaxy, which offer atomic-scale precision but are costly and limited in material compatibility. For dielectric microcavities, high Q factors can be achieved using dielectric Bragg mirrors. However, conventional deposition techniques for the top mirrors, such as plasma-enhanced chemical vapor deposition or sputtering, can damage embedded emitters. This limitation is particularly severe for van der Waals materials, especially atomically thin semiconductors. Moreover, the conventional top-mirror deposition can cover or degrade predefined metal contacts. Recovering electrical access typically requires additional lithography and etching steps. Here, a deterministic dry-transfer approach is developed to fabricate complete dielectric microcavities using both top and bottom SiO_2/TiO_2 Bragg mirrors without post-growth lift-off processes, reaching a Q factor ~ 4x10^3. Using a WS_2 monolayer as the active medium, clear signatures of strong exciton-photon coupling are observed at both room temperature and cryogenic temperatures. These results demonstrate an efficient cavity fabrication approach that preserves the integrity of the emitter of layered materials, enabling next generation integrated photonic devices.

physics.optics

Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices.

physics.app-ph

Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM

In organic semiconductor based bulk heterojunction solar cells, the presence of acceptor increases the formation of charge transfer (CT) excitons, thereby leading to higher exciton dissociation probabilities. In this work we used steady state EA measurements to probe the change in the nature of excitons as the blend composition of the solar cell active layer material is varied. We investigated blends of poly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)] (PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM). Analysis of the EA spectra showed that in presence of fullerene based acceptor, like PCBM, CT characteristics of the excitons were modified, though, no new CT signature was observed in the blend. Enhancement in the CT characteristic in the blend was reflected in the photoluminescence (PL) measurements of the blends, where, PL quenching of $\sim$ 63\% was observed for 1\% PCBM. The quenching reaches saturation at about 20\% PCBM. However, the maximum efficiency of the devices was obtained for the blend having 50\% PCBM. Comparing experimental results with simulations, the variation of the device efficiency with PCBM percentage was shown to be arising from multiple factors like increase in polarizability and dipole moment of excitons, and the efficiency of the carrier collection from the bulk of the active layer.

physics.app-ph

Identification of the nature of excitons in PPDT2FBT using electroabsorption spectroscopy

Electroabsorption (EA) measurements can be used to identify the type of excitons contributing to the absorption spectra of semiconductors which have applications in optoelectronics. However, the inferences from the EA measurement greatly depend on the method of fitting and extraction of parameters from the measured spectra. We deconstruct the absorption spectrum by fitting multiple Gaussians and obtain the relative contribution of first and second derivative of each absorption band in EA spectrum, which gives indication of the Frenkel, charge transfer or mixed nature of the excitons involved. We check the applicability of the method for pentacene which is widely used and well studied organic semiconductor. We report EA measurements of poly[(2,5-bis(2-hexyldecyloxy)-phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]-thiadiazole)] (PPDT2FBT). Our analysis shows that besides the feature around 3.07 eV, which is strongly Frenkel-like, most of the absorption bands for PPDT2FBT are mixed states, having relatively high charge transfer contributions. Since charge transfer excitons have higher dissociation efficiencies, we infer PPDT2FBT to be a promising candidate for photovoltaic applications.

physics.app-ph