arXiv subjects

Subhashree Chatterjee

Publications and source records attributed to Subhashree Chatterjee.

5 recordsLinked to original sources

arXiv2026

Light Polarization Sensitive Transistor Action in the van der Waals ferroelectric 4H-SnS2

Van der Waals (vdW) ferroelectric semiconductors provide a unique platform for exploring the interplay between spontaneous polarization, electronic transport, ion migration, and photocarrier generation at the nanoscale. Here, we establish a room-temperature ferroelectric state in SnS2 and its sensitivity to structural polytype by directly contrasting the centrosymmetric 2H-phase with the polar 4H-phase. Raman spectroscopy distinguishes the 2H and 4H polymorphs of SnS2 through their characteristic phonon fingerprints. Piezoresponse force microscopy confirms room-temperature ferroelectricity in the 4H phase, while the 2H phase exhibits no ferroelectric response. The built-in polarization in a three-terminal transistor device of the 4H-SnS2 is modulated significantly by electrostatic gating and on exposure to linear and circularly polarized light. This device reveals polarization-controlled output characteristics with distinct gate-voltage induced hysteretic response and thermally activated carrier transport, confirming p-type semiconducting behavior strongly coupled to ferroelectric polarization. The photoresponse likewise exhibits polarization-assisted carrier separation, sublinear power-law scaling, a nonmonotonic temperature response correlated with the characteristic Raman modes, ferroelectric hysteresis, and a pronounced dependence on the circular and linear polarization states of the incident laser beam. These results establish 4H-SnS2 as a promising material system for polarization-driven electronic and optoelectronic technologies, including nonvolatile memory and photoferroelectric functionalities.

cond-mat.mtrl-sci↗

arXiv2026

Photoferroelectric Coupling and Polarization-Controlled Interfacial Band Modulation in van der Waal Compound CuInP2S6

Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices. Here, we present direct nanoscale evidence of photoferroionic coupling in the vdW FE semiconductor CuInP2S6 (CIPS), where optical excitation jointly modulates electronic band bending, FE switching, and Cu+ ionic relaxation. The use of correlated Kelvin probe force microscopy, piezoresponse force microscopy, and conductive atomic force microscopy under above-bandgap illumination reveals illumination-induced enhancement of surface work function, persistent surface photovoltage, reduced coercive field, and positive imprint shifts. These effects arise from synergistic photocarrier redistribution and slow Cu+ migration that reshape interfacial depletion widths and internal electric fields. Illumination-assisted barrier lowering further enhances carrier injection and produces sweep-rate-dependent ferroionic transport hysteresis. Our results establish photoferroionic coupling as the governing mechanism for light-controlled band modulation and polarization stability in CIPS, providing a nanoscale framework for designing light-addressable FE memories, optoelectronic switches, and neuromorphic devices based on layered ferroionic materials.

cond-mat.mtrl-sci↗

arXiv2026

Cr3+ spin dynamics under the octahedral crystal field in van der Waals antiferromagnets

The magnetic moment in van der Waals (vdW) materials containing 3d transition metals originates from unpaired d-electron spins and their interaction with surrounding ligands. The interplay between exchange interactions and magnetic anisotropy stabilizes long-range ordering of such moments. The compound CuCrP2S6 (CCPS) presents an interesting class of vdW solids where the coupling of Cr3+ moments and ordering of Cu1+ ions give rise to a multiferroic ground state. Here we investigate the spin dynamics of Cr3+ ions in CCPS through magnetization and broadband as well as single sub-THz magnetic resonance measurements. The orbital moment of Cr3+ is quenched under the octahedral crystal field of surrounding chalcogen ions, resulting in negligible magnetic anisotropy-a feature common to Cr-based vdW antiferromagnets (AFM). Resonance spectra over a wide frequency-field-temperature range reveal quasi-2D AFM dynamics governed mainly by isotropic Cr-Cr exchange interactions, which determine the magnetic order, spin reorientation, and damping. Sub-THz resonance spectra also uncover a field-induced ferromagnetic polarization, highlighting the universal role of Cr-Cr exchange in layered Cr compounds. Moreover, persistent magnetic correlations far above the N\'eel temperature (TN ~ 32 K) points to short-range magnetic order in CCPS and motivates future studies of a possible interplay between AFM and antiferroelectric orders. These results establish CCPS as an exemplary system for exploring 2D magnetism and electric-field-tunable spintronic functionalities in layered multiferroics.

cond-mat.mtrl-sci↗

arXiv2025

Enhanced negative capacitance in La-doped Pb(Zr$_{0.4}$Ti$_{0.6}$)O$_3$ ferroelectric capacitor from tuning of bias voltage pulse

We report a remarkable bias voltage dependent specific negative capacitance in multidomain La-doped Pb(Zr$_{0.4}$Ti$_{0.6}$)O$_3$ (PLZT) ferroelectric capacitors. The specific negative capacitance maximizes at a specific bias voltage because of emergence of maximum domain-wall density during ``switching" of the domains. Domain configuration changes from such an ``optimum" state if higher or lower bias voltage is applied at a much faster or slower rate. Phase-field simulation using time-dependent Ginzburg-Landau equation corroborates the experimental results and shows dependence of the domain-wall length during switching on the bias voltage amplitude and its maximization at a specific bias voltage amplitude. Interestingly, the radius of curvature of the resulting polarization ($P$) versus voltage ($V$) hysteresis loop at the coercive voltage ($V_C$), as well, turns out to be depending on the bias voltage. All these results indicate a close correlation among the bias voltage pulse profile (amplitude and time scale), domain-wall length during switching, shape of the resulting ferroelectric hysteresis loop, and the transient negative capacitance. It may have important ramifications both in the context of physics behind negative capacitance in a multidomain ferroelectric capacitor and devices being developed by exploiting its advantages.

cond-mat.mtrl-sci↗

arXiv2024

Evidence of spin reorientation transition below 150 K from magnetic force microscopy in a ferromagnetic BiFeO$_3$ thin film

We investigated the magnetic transitions in BiFeO$_3$ at low temperature (5-300 K) and observed nearly 90$^o$ rotation of magnetic domains (imaged by vertical magnetic force microscopy) across 150 K in an epitaxial thin film of thickness $\sim$36 nm. It offers a clear evidence of spin reorientation transition. It also corroborates the transition observed below $\sim$150 K in the zero-field-cooled and field-cooled magnetization versus temperature data. The field-driven 180$^o$ domain switching at room temperature, on the other hand, signifies presence of ferromagnetism. Since bulk antiferromagnetic BiFeO$_3$ does not exhibit such a transition, this observation in ferromagnetic thin film of BiFeO$_3$ indicates a radical effect because of epitaxial strain. Density functional theory based first-principles calculations too reveal that combined in- and out-of-plane epitaxial strain induces magnetic transition from G- to C-type structure in BiFeO$_3$.

cond-mat.mtrl-sci↗