arXiv subjects

Sudip Malick

Publications and source records attributed to Sudip Malick.

7 recordsLinked to original sources

arXiv2026

Possible Proximity to Ferromagnetism in the V$_2$Ga$_5$ Superconductor

Superconductivity and ferromagnetism are generally competing ground states in $d$-electron systems, making their interplay of fundamental interest. We report a comprehensive study of high-quality single- and polycrystalline V$_2$Ga$_5$, a bulk type-II superconductor ($T_c = 3.54 \ K$) with a quasi-one-dimensional crystal structure, supplemented with density functional theory (DFT) calculations, suggesting possible proximity to ferromagnetic order. Below $T \approx 10 \ K$, magnetic susceptibility shows ZFC/FC splitting, along with saturation and hysteresis in $M(H)$. Moreover, electrical transport measurements reveal a magnetic-field-dependent resistivity upturn, while specific heat is enhanced in magnetic fields. DFT calculations show that the Fermi level in V$_2$Ga$_5$ is located at a peak in the density of states, with a small magnetic moment per unit cell comparable to the experimental value. Together, these results indicate the possibility that ferromagnetic correlations develop below $T \approx 10 \ K$, well above $T_c$, with long-range ferromagnetic order suppressed by the superconducting transition.

cond-mat.supr-con↗

arXiv2025

Quantum oscillations and transport properties of layered single-crystal SrCu$_4$As$_2$

We report a systematic investigation of the physical properties and Fermi-surface topology of layered single-crystal \ce{SrCu4As2} using electrical transport, magnetotransport, and quantum-oscillation experiments plus band-structure calculations. The temperature-dependent electrical resistivity reveals a hysteretic phase transition at $T_P$ = 59 K, most likely associated with a structural change. Hall resistivity data suggest a marked change in the average hole density resulting from the latter phase transition near $T_P$. A large, linear, and nonsaturating magnetoresistance is observed at low temperatures in \ce{SrCu4As2}, likely attributable to the multipocket Fermi surface. Quantum-oscillation data measured in magnetic fields of up to 60 T show several oscillation frequencies exhibiting low effective masses, indicating the presence of Dirac-like band dispersion in \ce{SrCu4As2}, as suggested by the band structure calculations.

cond-mat.str-el↗

arXiv2025

Observation of quantum oscillations, linear magnetoresistance, and crystalline electric field effect in quasi-two-dimensional PrAgBi$_2$

We report the magnetic and magnetotransport properties with electronic band structure calculation of the Bi square net system PrAgBi$_2$. The magnetization and heat capacity data confirm the presence of a crystalline electric field (CEF) effect in PrAgBi$_2$. Analysis of the CEF effect using a multilevel energy scheme reveals that the ground state of PrAgBi$_2$ consists of five singlets and two doublets. The de Haas-van Alphen (dHvA) quantum oscillations data show a single frequency with a very small cyclotron effective mass of approximately 0.11 $m_e$. A nontrivial Berry phase is also observed from the quantum oscillations data. The magnetotransport data shows linear and unsaturated magnetoresistance, reaching up to 1060\% at 2 K and 9 T. Notably, there is a crossover from a weak-field quadratic dependence to a high-field linear dependence in the field-dependent magnetoresistance data. The crossover critical field $B^*$ follows the quadratic temperature dependence, indicating the existence of Dirac fermions. The band structure calculation shows several Dirac-like linear band dispersions near the Fermi level and a Dirac point close to the Fermi level, located at the Brillouin zone boundary. \textit{Ab inito} calculations allowed us to ascribe the observed dHvA oscillation frequency to a particular feature of the Fermi surface. Our study suggests layered PrAgBi$_2$ is a plausible candidate for hosting the CEF effect and Dirac fermion in the Bi square net.

cond-mat.str-el↗

arXiv2024

Large magnetoresistance and first-order phase transition in antiferromagnetic single-crystalline EuAg$_4$Sb$_2$

We present the results of a thorough investigation of the physical properties of EuAg$_4$Sb$_2$ single crystals using magnetization, heat capacity, and electrical resistivity measurements. High-quality single crystals, which crystallize in a trigonal structure with space group $R\bar{3}m$, were grown using a conventional flux method. Temperature-dependent magnetization measurements along different crystallographic orientations confirm two antiferromagnetic phase transitions around $T_{N1}$ = 10.5 K and $T_{N2}$ = 7.5 K. Isothermal magnetization data exhibit several metamagnetic transitions below these transition temperatures. Antiferromagnetic phase transitions in EuAg$_4$Sb$_2$ are further confirmed by two sharp peaks in the temperature-dependent heat capacity data at $T_{N1}$ and $T_{N2}$, which shift to the lower temperature in the presence of an external magnetic field. Our systematic heat capacity measurements utilizing a long-pulse and single-slope analysis technique allow us to detect a first-order phase transition in EuAg$_4$Sb$_2$ at 7.5 K. The temperature-dependent electrical resistivity data also manifest two features associated with magnetic order. The magnetoresistance exhibits a broad hump due to the field-induced metamagnetic transition. Remarkably, the magnetoresistance keeps increasing without showing any tendency to saturate as the applied magnetic field increases, and it reaches $\sim$20000\% at 1.6 K and 60 T. At high magnetic fields, several magnetic quantum oscillations are observed, indicating a complex Fermi surface. A large negative magnetoresistance of about -55\% is also observed near $T_{N1}$. Moreover, the $H$-$T$ phase diagram constructed using magnetization, heat capacity, and magnetotransport data indicates complex magnetic behavior in EuAg$_4$Sb$_2$.

cond-mat.str-el↗

arXiv2024

Magnetic, thermodynamic, and magnetotransport properties of CeGaGe and PrGaGe single crystals

We investigate the physical properties of high-quality single crystals CeGaGe and PrGaGe using magnetization, heat capacity, and magnetotransport measurements. Gallium-indium binary flux was used to grow these single crystals that crystallize in a body-centered tetragonal structure. Magnetic susceptibility data reveal a magnetic phase transition around 6.0 and 19.4 K in CeGaGe and PrGaGe, respectively, which is further confirmed by heat capacity and electrical resistivity data. A number of additional anomalies have been observed below the ordering temperature in the magnetic susceptibility data, indicating a complex magnetic structure. The magnetic measurements also reveal a strong magnetocrystalline anisotropy in both compounds. Our detailed analysis of the crystalline electric field (CEF) effect as observed in magnetic susceptibility and heat capacity data suggests that the $J$ = 5/2 multiplet of CeGaGe splits into three doublets, while the $J$ = 4 degenerate ground state of PrGaGe splits into five singlets and two doublets. The estimated energy levels from the CEF analysis are consistent with the magnetic entropy.

cond-mat.str-el↗

arXiv2022

Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs

The effect of 50\% Cu doping at the Au site in the topological Dirac semimetal CaAuAs is investigated through electronic band structure calculations, electrical resistivity, and magnetotransport measurements. Electronic structure calculations a suggest broken-symmetry-driven topological phase transition from the Dirac to triple-point state in CaAuAs via alloy engineering. The electrical resistivity of both the CaAuAs and CaAu$_{0.5}$Cu$_{0.5}$As compounds shows metallic behavior. Nonsaturating quasilinear magnetoresistance (MR) behavior is observed in CaAuAs. On the other hand, MR of the doped compound shows a pronounced cusplike feature in the low-field regime. Such behavior of MR in CaAu$_{0.5}$Cu$_{0.5}$As is attributed to the weak antilocalization (WAL) effect. The WAL effect is analyzed using different theoretical models, including the semiclassical $\sim\sqrt{B}$ one which accounts for the three-dimensional WAL and modified Hikami-Larkin-Nagaoka model. Strong WAL effect is also observed in the longitudinal MR, which is well described by the generalized Altshuler-Aronov model. Our study suggests that the WAL effect originates from weak disorder and the spin-orbit coupled bulk state. Interestingly, we have also observed the signature of chiral anomaly in longitudinal MR, when both current and field are applied along the $c$ axis. The Hall resistivity measurements indicate that the charge conduction mechanism in these compounds is dominated by the holes with a concentration $\sim$10$^{20}$ cm$^{-3}$ and mobility $\sim 10^2$ cm$^2$ V$^{-1}$ S$^{-1}$.

cond-mat.str-el↗

arXiv2022

Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$

We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density.

cond-mat.str-el↗