arXiv subjects

Suguru Hosoi

Publications and source records attributed to Suguru Hosoi.

7 recordsLinked to original sources

arXiv2026

A continuous confinement-deconfinement transition in a triangular quantum magnet

A continuous transition between phases hosting distinct excitations---bosonic magnons versus fermionic spinons---is a long-sought phenomenon in quantum magnetism, analogous to the confinement--deconfinement transition in quantum chromodynamics. We report evidence for such a transition in the triangular-lattice antiferromagnet TlYbS$_2$. Antiferromagnetic order develops below $T_\mathrm{N} \approx 0.53\,\mathrm{K}$. A $c$-axis field suppresses this order, driving the system into a gapless quantum spin liquid with a spinon Fermi surface above $\mu_0 H_\mathrm{c} \approx 3\,\mathrm{T}$, evidenced by a finite residual linear term in thermal conductivity, a Pauli-like susceptibility, and a temperature-independent NMR Knight shift. Approaching $H_\mathrm{c}$ from above, the scattering rate of itinerant excitations is strongly enhanced while their density of states shows no critical enhancement, atypical of conventional magnetic quantum criticality. These results point to a continuous confinement--deconfinement transition governed by fractionalized excitations beyond the Ginzburg--Landau paradigm.

cond-mat.str-el↗

arXiv2025

Symmetry-resolved magnetoelastoresistance in multivalley bismuth

We report a symmetry-resolved study of longitudinal magnetoelastoresistance (MER) in the multivalley material bismuth, with the current, uniaxial stress, and magnetic field all applied along the binary axis. The magnitude of MER exhibits a steep increase at low magnetic fields, reaches a peak, and then gradually decreases at higher fields. By decomposing the strain response into symmetric and antisymmetric symmetry channels, we reveal contrasting magnetic field dependencies. Despite the overall non-monotonic field dependence of the MER, the symmetric component remains nearly constant under magnetic fields, suggesting that the valleys in bismuth preserve a rigid-band nature against strain even in the presence of a magnetic field. In contrast, the antisymmetric component, associated with mobility anisotropy, dominates the MER response in a magnetic field. At low magnetic fields, the applied field effectively modifies the apparent mobility of each valley, leading to an enhancement in the magnitude of the antisymmetric MER. At higher fields, field-induced valley polarization further modifies this mobility anisotropy by altering the contributions from each valley's mobility, accounting for the moderate suppression of the MER. These findings demonstrate that symmetry-resolved MER serves as a powerful probe of valley-dependent electronic states and provides a fundamental platform for understanding the interplay between magnetic field, strain, and charge transport.

cond-mat.mes-hall↗

arXiv2025

Development of microwave surface elastoresistivity measurement technique under tunable strain

By integrating a dielectric microwave resonator with a piezoelectric-based strain device, we develop an in situ strain-tunable microwave spectroscopy technique that enables contactless measurements of superconducting properties under strain. In the slightly overdoped iron-based superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$, we successfully observe a systematic strain dependence of the superconducting transition, manifested as changes in the quality factor and resonance frequency shifts. Both compressive and tensile anisotropic lattice distortions along the [110]${_{\rm T}}$ direction suppress superconductivity, consistent with standard transport measurements, highlighting the pivotal role of nematic fluctuations in the superconducting mechanism. Our strain-tunable cavity therefore serves as a powerful, contactless probe of fundamental superconducting material properties under strain and may also potentially facilitate the design of hybrid quantum systems with strain-controlled quantum degrees of freedom.

cond-mat.supr-con↗

arXiv2024

Effects of strain-tunable valleys on charge transport in bismuth

The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits the evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principle band calculations under strain. These facts suggest the successful tune and evaluation of the valley populations through strain-dependent charge valley transport.

cond-mat.mtrl-sci↗

arXiv2021

The relationship between transport anisotropy and nematicity in FeSe

The mechanism behind the nematicity of FeSe is not known. Through elastoresitivity measurements it has been shown to be an electronic instability. However, so far measurements have extended only to small strains, where the response is linear. Here, we apply large elastic strains to FeSe, and perform two types of measurements. (1) Using applied strain to control twinning, the nematic resistive anisotropy at temperatures below the nematic transition temperature Ts is determined. (2) Resistive anisotropy is measured as nematicity is induced through applied strain at fixed temperature above Ts. In both cases, as nematicity strengthens the resistive anisotropy peaks about about 7%, then decreases. Below ~40 K, the nematic resistive anisotropy changes sign. We discuss possible implications of this behaviour for theories of nematicity. We report in addition: (1) Under experimentally accessible conditions with bulk crystals, stress, rather than strain, is the conjugate field to the nematicity of FeSe. (2) At low temperatures the twin boundary resistance is ~10% of the sample resistance, and must be properly subtracted to extract intrinsic resistivities. (3) Biaxial inplane compression increases both in-plane resistivity and the superconducting critical temperature Tc, consistent with a strong role of the yz orbital in the electronic correlations.

cond-mat.str-el↗

arXiv2020

Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3

Nematic orders emerge nearly universally in iron-based superconductors, but elucidating their origins is challenging because of intimate couplings between orbital and magnetic fluctuations. The iron-based ladder material BaFe2S3, which superconducts under pressure, exhibits antiferromagnetic order below TN ~ 117K and a weak resistivity anomaly at T* ~ 180K, whose nature remains elusive. Here we report angle-resolved magnetoresistance (MR) and elastoresistance (ER) measurements in BaFe2S3, which reveal distinct changes at T*. We find that MR anisotropy and ER nematic response are both suppressed near T*, implying that an orbital order promoting isotropic electronic states is stabilized at T*. Such an isotropic state below T* competes with the antiferromagnetic order, which is evidenced by the nonmonotonic temperature dependence of nematic fluctuations. In contrast to the cooperative nematic orders in spin and orbital channels in iron pnictides, the present competing orders can provide a new platform to identify the separate roles of orbital and magnetic fluctuations.

cond-mat.supr-con↗

arXiv2020

Rigid platform for applying large tunable strains to mechanically delicate samples

Response to uniaxial stress has become a major probe of electronic materials. Tuneable uniaxial stress may be applied using piezoelectric actuators, and so far two methods have been developed to couple samples to actuators. In one, actuators apply force along the length of a free, beam-like sample, allowing very large strains to be achieved. In the other, samples are affixed directly to piezoelectric actuators, allowing study of mechanically delicate materials. Here, we describe an approach that merges the two: thin samples are affixed to a substrate, that is then pressurized uniaxially using piezoelectric actuators. Using this approach, we demonstrate application of large elastic strains to mechanically delicate samples: the van der Waals-bonded material FeSe, and a sample of CeAuSb$_2$ that was shaped with a focused ion beam.

physics.app-ph↗