arXiv subjects

Sujit Das

Publications and source records attributed to Sujit Das.

At least 19 recordsLinked to original sources

arXiv2026

Silicon-compatible ideal antiferroelectricity with large digital electromechanical responses enabled by thermal-strain domain engineering

Antiferroelectrics exhibit reversible antipolar-polar transformations, offering a compelling platform for multiple functionalities in modern nanoelectronics, yet deterministic control of antiferroelectric domains and switching pathways remain elusive. Moreover, their integration with ubiquitous silicon-based electronic devices has been limited by the structural and chemical incompatibilities of conventional oxide platforms. Here, we convert the conventional drawback of thermal mismatch into a functional advantage and realize ideal antiferroelectricity in epitaxial PbZrO3 thin films on silicon through thermal tensile-strain engineering, a strain regime unattainable on conventional perovskite substrates. Combined theoretical and experimental studies show that tensile strain stabilizes the (004)o domain, enabling a direct one-step switching, whereas compressive-strain-stabilized (240)o domains switch through intermediate ferrielectric states. The resulting films exhibit near-zero remanent polarization, square double hysteresis, nanosecond switching (~75ns), large reversible electrostrain (~0.6%) and robust operation windows. These findings provide key insights into domain-engineered ideal antiferroelectricity on silicon, opening a viable route toward high-performance antiferroelectric nano-electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Unlocking Cryogenic Energy Storage by Constructing Dipole Glass with Unit-cell-level Polar Disorder

Cryogenic energy storage is vital for frontier technologies including deep-space exploration and quantum computing, yet conventional electrochemical energy systems fail below ~230 K due to frozen ion migration. While relaxor-based dielectric capacitors provide high efficiency at room temperature, the intrinsic freezing/growth of polar nanodomains at extended cryogenic regime limits their applications with deteriorated hysteresis losses. Here, we realize superior cryogenic energy-storage performance by designing unit-cell-level disordered dipole-glass state in Pb0.6Sr0.4ZrO3 thin films with composition near antiferroelectric-paraelectric phase boundary. The antiferroelectric-derived dipole-glass introduces enhanced unit-cell-level complexity of dipole interaction that suppresses long-range ferroelectric order. This enables ultralow-hysteresis operation (efficiency > 88%) down to 4 K, delivering record-high energy density (211 J/cm^3) at 9 MV/cm, stability over 10^8 charge/discharge cycles and microsecond-scale charge/discharge capability. This work establishes a dipole-glass paradigm for cryogenic dielectric capacitors, opening a new avenue to highly-efficient energy-storage systems with broad applications in frontier nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Topological spin-texture transitions in van der Waals magnets revealed by X-ray Fourier transform holography

Nontrivial topological spin-textures, such as skyrmions, merons, bimerons, and skyrmioniums, are envisioned as robust building blocks for future memory and logic devices. Controllable transformations between these states require a quantum-mechanical description of electronic degrees of freedom and atomic-scale insight beyond existing phenomenological models. Here, we report an atomic-scale investigation of topological phase transitions and their protection in the two-dimensional van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT) using a combined experimental-theoretical approach. Synchrotron-based Fourier transform holography directly images labyrinth domains, isolated skyrmions, mixed labyrinth-skyrmion phases, and skyrmion bags with high spatial resolution. We compare these observations to simulations based on an electronic lattice Hamiltonian that captures both metallicity and relativistic spin-orbit coupling in FGT. By systematically exploring a broad range of temperatures and magnetic fields, we map the mechanisms governing topological transitions and their stability. This sequential-integrated experimental-theoretical framework advances understanding of spin-texture interactions and enables precise control of external tuning parameters. Our results establish a platform for creating, stabilizing, and manipulating topological states, paving the way for engineered spin-texture transitions in next-generation spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2026

Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2026

Decoupling effects of the resistive-switching behavior on the polarization reversal in ultrathin ferroelectric Hf0.5Zr0.5O2 films

HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down, resistive-switching behavior becomes increasingly pronounced, intricately intertwining with the polarization-switching process and affecting ferroelectric switching factors often overlooked yet crucial for device performance optimization. By characterizing resistive-switching behavior and oxygen vacancy motion using tailored electric pulse schemes, we decouple the resistive-switching behavior from the overall switching process in ultrathin ferroelectric HZO films, which would otherwise erroneously inflate polarization values and increase coercive fields. Building on this, we elucidate endurance degradation mechanisms from dual perspectives of resistive switching and defect migration. Furthermore, we demonstrate the mitigated resistive switching activity by designing HfO2-based devices with symmetric oxide electrodes, achieving reduced coercive fields and improved cycling performances. This work provides crucial insights into the origins of inflated polarizations and reliability challenges in HfO2-based devices while offering a viable strategy to enhance ferroelectric properties for advanced memory applications.

cond-mat.mtrl-sci↗

arXiv2025

Harnessing the polar vortex motion in oxide heterostructures

Polar topology, an analogue of the magnetic topology, serves as a large playground for exotic physical phenomena with a wide range of multifunctional applications. Polar vortices and skyrmions are representative polar topologies that have been predicted to significantly enhance the functionality and information density of nanoelectronic devices due to their ultrasmall dimensions. Despite these advantages, the practical realization of polar topologies in devices is impeded by the intrinsic challenges associated with their controlled motion and manipulation. Therefore, harnessing vortex manipulation-such as motion, on demand creation, annihilation, and shape transformation-is essential for practical device integration. However, vortex motion is often challenged by intrinsic physical limitations in collective lattice distortions and strong pinning effects from the surrounding environment, which remains elusive. In this study, we present real time observation of vortex motion in PbTiO3/SrTiO3 heterostructures, achieved through the application of localized pulsed electric fields and trailing bias fields from a conductive tip. Notably, the vortices exhibit reversible motion in response to the field direction. Furthermore, by precisely manoeuvring the conductive Atomic-Force-Microscopy tip along specific trajectories, we achieved controlled vortex reshaping, with reconfigured vortices showing remarkable stability over extended periods. This underline physical mechanism is further pinpointed by phase-field simulations, which revealed that the motion of the vortex boundary is controlled through the switching of the zigzag patterns of the vortex core. This study highlights the feasibility of harnessing vortex dynamics through external stimuli, advancing the fundamental physical understanding and prospects for next-generation polar vortex-based nanoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices

The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industrial applications. Traditional stabilization approaches, such as doping, often induce crystal defects and impose constraints on the thickness of ferroelectric HfO2 thin films. These limitations render the ferroelectric properties vulnerable to degradation, particularly due to phase transitions under operational conditions. Here, we demonstrate robust ferroelectricity in high-quality epitaxial (HfO2)n/(ZrO2)n superlattices, which exhibit significantly enhanced ferroelectric stability across an extended thickness range. Optimized-period superlattices maintain stable ferroelectricity from up to 100 nm, excellent fatigue resistance exceeding 109 switching cycles, and a low coercive field of ~0.85 MV/cm. First-principles calculations reveal that the kinetic energy barrier of phase transition and interfacial formation energy are crucial factors in suppressing the formation of non-polar phases. This work establishes a versatile platform for exploring high-performance fluorite-structured superlattices and advances the integration of HfO2-based ferroelectrics into a broader range of applications.

cond-mat.mtrl-sci↗

arXiv2025

Terahertz-field activation of polar skyrons

Unraveling collective modes arising from coupled degrees of freedom is crucial for understanding complex interactions in solids and developing new functionalities. Unique collective behaviors emerge when two degrees of freedom, ordered on distinct length scales, interact. Polar skyrmions, three-dimensional electric polarization textures in ferroelectric superlattices, disrupt the lattice continuity at the nanometer scale with nontrivial topology, leading to previously unexplored collective modes. Here, using terahertz-field excitation and femtosecond x-ray diffraction, we discovered subterahertz collective modes, dubbed 'skyrons', which appear as swirling patterns of atomic displacements functioning as atomic-scale gearsets. Momentum-resolved time-domain measurements of diffuse scattering revealed an avoided crossing in the dispersion relation of skyrons. We further demonstrated that the amplitude and dispersion of skyrons can be controlled by sample temperature and electric-field bias. Atomistic simulations and dynamical phase-field modeling provided microscopic insights into the three-dimensional crystallographic and polarization dynamics. The discovery of skyrons and their coupling with terahertz fields opens avenues for ultrafast control of topological polar structures.

cond-mat.mtrl-sci↗

arXiv2025

Ideal antiferroelectricity with large digital electrostrain in PbZrO3 epitaxial thin films

Antiferroelectrics exhibit reversible antipolar-polar phase transitions under electric fields, yielding large electrostrain suitable for electromechanical devices. Nevertheless, in thin-film form, the antiferroelectric behavior is often obscured by competing ferroic orders, resulting in slanted hysteresis loops with undesired remnant polarization, subsequently posing challenges in obtaining ideal antiferroelectricity and understanding their intrinsic electrical behavior. Here, atomistic models for controllable antiferroelectric-ferroelectric phase transition pathways are unveiled along specific crystallographic directions. Guided by the anisotropic phase transition and orientation design, we achieved ideal antiferroelectricity with square double hysteresis loop, large saturated polarization (~60 {\mu}C/cm2), near-zero remnant polarization, fast response time (~75 ns), and near-fatigue-free performance (~10^10 cycles) in (111)P-oriented PbZrO3 epitaxial thin films. Moreover, a bipolar and frequency-independent digital electrostrain (~0.83%) were demonstrated in this architype antiferroelectric system. In-situ X-ray diffraction studies further reveal that the large digital electrostrain results from intrinsic field-induced antiferroelectric-ferroelectric structural transition. This work demonstrates the anisotropic phase transition mechanism and ideal antiferroelectricity with large digital electrostrain in antiferroelectric thin films, offering a new avenue for applications of antiferroelectricity in nanoelectromechanical systems.

cond-mat.mtrl-sci↗

arXiv2025

PTST: A polar topological structure toolkit and database

Ferroelectric oxide superlattices with complex topological structures such as vortices, skyrmions, and flux closure domains have garnered significant attention due to their fascinating properties and potential applications. However, progress in this field is often impeded by challenges such as limited data-sharing mechanisms, redundant data generation efforts, high barriers between simulations and experiments, and the underutilization of existing datasets. To address these challenges, we have created the Polar Topological Structure Toolbox and Database(PTST). This community driven repository compiles both standard datasets from high throughput phase field simulations and user submitted nonstandard datasets. The PTST utilizes a Global Local Transformer (GL Transformer) to classify polarization states by dividing each sample into spatial sub blocks and extracting hierarchical features, resulting in ten distinct topological categories. Through the PTST web interface, users can easily retrieve polarization data based on specific parameters or by matching experimental images. Additionally, a Binary Phase Diagram Generator allows users to create strain and electric field phase diagrams within seconds. By providing ready-to-use configurations and integrated machine-learning workflows, PTST significantly reduces computational load, streamlines reproducible research, and promotes deeper insights into ferroelectric topological transitions.

cond-mat.mtrl-sci↗

arXiv2025

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being a major impediment. We report the fatigue-free behavior in interface-designed Hf0.5Zr0.5O2-based heterostructures. A coherent CeO2-x/Hf0.5Zr0.5O2 heterointerface is constructed, wherein CeO2-x acts as an oxygen sponge, capable of reversibly accepting and releasing oxygen vacancies. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface, enabling improved switching characteristics. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the cycling-induced oriented defect drift. The two-pronged technique mitigates oxygen-voltammetry-generated chemical/energy fluctuations, suppressing the formation of paraelectric phase and polarization degradation. The design ensures a fatigue-free feature exceeding 10^11 switching cycles and an endurance lifetime surpassing 10^12 cycles for Hf0.5Zr0.5O2-based capacitors, along with excellent temperature stability and retention. These findings pave the way for developing ultra-stable hafnia-based ferroelectric devices.

cond-mat.mtrl-sci↗

arXiv2024

Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation from the Vegard law accompanying with enhanced multiferroism is observed in the strained solid solution epitaxial films, where we achieve a pronounced tetragonality, enhanced saturated magnetization, substantial polarization, high ferroelectric Curie temperature, all while maintaining impressively low leakage current. These characteristics surpass the properties of their parent BiFeO3 and BaTiO3 films. Moreover, the superior ferroelectricity has never been reported in corresponding bulks. These findings underscore the potential of strained BiFeO3 BaTiO3 films as lead-free, room-temperature multiferroics.

cond-mat.mtrl-sci↗

arXiv2024

Optical Control of Adaptive Nanoscale Domain Networks

Adaptive networks can sense and adjust to dynamic environments to optimize their performance. Understanding their nanoscale responses to external stimuli is essential for applications in nanodevices and neuromorphic computing. However, it is challenging to image such responses on the nanoscale with crystallographic sensitivity. Here, the evolution of nanodomain networks in (PbTiO3)n/(SrTiO3)n superlattices was directly visualized in real space as the system adapts to ultrafast repetitive optical excitations that emulate controlled neural inputs. The adaptive response allows the system to explore a wealth of metastable states that were previously inaccessible. Their reconfiguration and competition were quantitatively measured by scanning x-ray nanodiffraction as a function of the number of applied pulses, in which crystallographic characteristics were quantitatively assessed by assorted diffraction patterns using unsupervised machine-learning methods. The corresponding domain boundaries and their connectivity were drastically altered by light, holding promise for light-programmable nanocircuits in analogy to neuroplasticity. Phase-field simulations elucidate that the reconfiguration of the domain networks is a result of the interplay between photocarriers and transient lattice temperature. The demonstrated optical control scheme and the uncovered nanoscopic insights open opportunities for remote control of adaptive nanoscale domain networks.

cond-mat.mes-hall↗

arXiv2024

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

cond-mat.mtrl-sci↗

arXiv2024

Non-equilibrium pathways to emergent polar supertextures

Ultrafast stimuli can stabilize metastable states of matter inaccessible by equilibrium means. Establishing the spatiotemporal link between ultrafast excitation and metastability is crucial to understanding these phenomena. Here, we use single-shot optical-pump, X-ray-probe measurements to provide snapshots of the emergence of a persistent polar vortex supercrystal in a heterostructure that hosts a fine balance between built-in electrostatic and elastic frustrations by design. By perturbing this balance with photoinduced charges, a starting heterogenous mixture of polar phases disorders within a few picoseconds, resulting in a soup state composed of disordered ferroelectric and suppressed vortex orders. On the pico-to-nanosecond timescales, transient labyrinthine fluctuations form in this soup along with a recovering vortex order. On longer timescales, these fluctuations are progressively quenched by dynamical strain modulations, which drive the collective emergence of a single supercrystal phase. Our results, corroborated by dynamical phase-field modeling, reveal how ultrafast excitation of designer systems generates pathways for persistent metastability.

cond-mat.mtrl-sci↗

arXiv2023

Antiferroelectric Oxide Thin-Films: Fundamentals, Properties, and Applications

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thickness, surface and interface effects as well as film stoichiometry. To unlock the full potential of these materials and design high-quality thin films for functional devices, a comprehensive and systematic understanding of their behavior is essential. In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin films, the key parameters that trigger their phase transition and the device applications that rely on the robust responses to electric, thermal, and optical stimuli. Current challenges and future perspectives highlight new and emerging research directions in this field. It is hoped that this review can boost the development of antiferroelectric thin-film materials and device design, stimulating more researchers to explore the unknowns together.

cond-mat.mtrl-sci↗

arXiv2023

Hexagonal close-packed polar-skyrmion lattice in ultrathin ferroelectric PbTiO3 films

Polar skyrmions are topologically stable, swirling polarization textures with particle-like characteristics, which hold promise for next-generation, nanoscale logic and memory. While understanding of how to create ordered polar skyrmion lattice structures and how such structure respond to applied electric fields, temperature, and film thickness remains elusive. Here, using phase-field simulations, the evolution of polar topology and the emergence of a phase transition to a hexagonal close-packed skyrmion lattice is explored through the construction of a temperature-electric field phase diagram for ultrathin ferroelectric PbTiO3 films. The hexagonal-lattice skyrmion crystal can be stabilized under application of an external, out-of-plane electric field which carefully adjusts the delicate interplay of elastic, electrostatic, and gradient energies. In addition, the lattice constants of the polar skyrmion crystals are found to increase with film thickness, consistent with expectation from Kittel law. Our studies pave the way for the development of novel ordered condensed matter phases assembled from topological polar textures and related emergent properties in nanoscale ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2022

Mechanical configurable nanopatterning of polar topological states and formation of post-skyrmion

The controllable phase transition and nanopatterning of topological states in a ferroelectric system under external stimuli are critical for realizing the potential applications in nanoelectronic devices such as logic, memory, race-track, etc. Herein, using the phase-field simulations, we demonstrate the mechanical manipulation of polar skyrmions in ferroelectric superlattices by applying external local compressive stress through an atomic force microscopy (AFM) tip. Different switching pathways are observed: under small to moderate force (<1 uN), the skyrmions coalesce to form a long stripe; while increasing the applied load (e.g., above 2 uN) leads to the suppression of spontaneous polarization, forming a new metastable topological structure, namely the post-skyrmion. It is constructed by attaching multiple merons onto a center Bloch skyrmion, showing a topological charge of 1.5 (under 2 uN) or 2 (under 3 uN). We have further designed a mechanical nanopatterning process, where the stripes can form a designed pattern by moving the AFM tip (write), which can also be switched back to a full skyrmion state under an applied electric field (erase). We believe this study will spur further interest in mechanical manipulation and nanopatterning of polar topological phases through mechanical forces.

cond-mat.mtrl-sci↗