arXiv subjects

Sujit Manna

Publications and source records attributed to Sujit Manna.

17 recordsLinked to original sources

arXiv2026

Bismuth Films on EuO(111) as a Platform for Proximity-Induced Topological States

Interfacing two-dimensional bismuth with a magnetic layer provides a promising route towards realizing higher-order topological phases. In particular, bismuthene on a ferromagnetic insulator substrate has been theoretically proposed by \citet{Chen2020} as a universal platform for magnetic second-order topological insulators. Here, we report the experimental realization of epitaxial bismuth films grown on the ferromagnetic insulator EuO(111). Using high-resolution scanning tunneling microscopy, we observe atomically ordered bi-layer bismuth with a (012)-oriented quasi-square lattice, corresponding to a stabilized $\alpha$-phase bismuthene. The resulting film is exceptionally flat compared to conventional metallic films, reflecting the intrinsic two-dimensional nature of the Bi(012) phase. Tunneling spectroscopy(STS) reveals a robust energy gap of about 400 meV in the local density of states, consistent with a quantum spin Hall insulating phase persisting up to room temperature. Spatially resolved STS further identifies enhanced edge-localised states at the island boundaries. Complementary low-temperature magnetotransport measurements on proximity-coupled ultrathin Bi films exhibit linear magnetoresistance and a Hall sign reversal, indicative of quantum-confinement-driven surface-dominated transport. Our results establish bismuthene-magnetic-insulator heterostructures as a viable experimental platform for realizing magnetically tunable topological phases, providing a critical step toward the observation of higher-order topology in two dimensions.

cond-mat.mes-hall↗

arXiv2026

Magnetic criticality and magnetocaloric response in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are antiferromagnetic topological insulators belonging to the MnBi$_{2n}$Te$_{3n+1}$ series, where structural layering provides a natural route to tune magnetic interaction in van der Waals magnets. Despite extensive interest in their topological properties, how the insertion of Bi$_2$Te$_3$ quintuple layers modifies magnetic critical fluctuations near the antiferromagnetic transition remains unresolved. Here, we combine scanning tunneling microscopy (STM), critical scaling analysis, and magnetocaloric measurements to directly correlate real-space structures with magnetic criticality. STM reveals atomically flat septuple-layer terraces in MnBi$_2$Te$_4$ whereas MnBi$_4$Te$_7$ displays coexisting septuple and quintuple layer terminations reflecting its alternating stacking sequence. MnBi$_2$Te$_4$ exhibits robust three-dimensional Ising-like critical behavior together with a distinct low-temperature first-order transition. In contrast, MnBi$_4$Te$_7$ displays crossover-dominated criticality arising from weakened interlayer exchange and competing magnetic phases. Correspondingly, the magnetocaloric response differs significantly between the two compounds. MnBi$_2$Te$_4$ shows dual-type magnetocaloric behavior with a sharp field-induced sign reversal of the isothermal magnetic entropy change ($-\Delta S_M$). It exhibits both inverse ($-\Delta S_M < 0$) and conventional ($-\Delta S_M > 0$) magnetocaloric effects. In contrast, MnBi$_4$Te$_7$ shows only conventional magnetocaloric response with a broad positive entropy peak. These results establish structural layering as a key parameter governing magnetic critical fluctuations and magnetocaloric behavior in MnBi$_{2n}$Te$_{3n+1}$ topological magnets.

cond-mat.mtrl-sci↗

arXiv2026

Nanoscale Electronic Phase Separation Driven by Fe-site Ordering in Fe\textsubscript{5-x}GeTe\textsubscript{2}

Understanding how local structural order governs electronic correlations is essential for revealing the microscopic mechanism underlying emergent behavior in two-dimensional magnets. In the layered van der Waals ferromagnet Fe\textsubscript{5-x}GeTe\textsubscript{2}, intrinsic Fe-site disorder provides a natural platform to probe this interplay. Here, we establish a direct atomic scale correlation between Fe-site ordering and local electronic structure by combining high-resolution scanning tunneling microscopy with density functional theory calculations. Scanning tunneling microscopy resolves two coexisting surface phases, a $\sqrt{3} \times \sqrt{3}$ superstructure associated with ordered Fe(1) configurations and an undistorted $1 \times 1$ hexagonal Te lattice in Fe(1)-deficient regions. Spatially resolved spectroscopy shows that the $\sqrt{3}$-ordered domains exhibit metallic behavior, whereas Fe(1) vacant areas display a suppressed density of states(DOS) near the Fermi level, indicative of pseudogapped electronic states. The nanoscale coexistence of these distinct electronic responses provides direct evidence of electronic phase separation driven by Fe-site ordering. First-principles calculations reveal that symmetry allowed hybridization between Fe 3d and Te 5p orbitals reconstructs the low-energy electronic structure, giving rise to the contrasting tunneling signatures of ordered and disordered phases. Bias-dependent local DOS simulations reproduce the experimentally observed contrast evolution and reveal that hybridization induced out of plane orbital character governs the spatial modulation of tunneling conductance. These results provide a microscopic framework linking atomic-scale structural order to nanoscale electronic inhomogeneity in van der Waals magnets.

cond-mat.mes-hall↗

arXiv2026

Altermagnetic superconducting diode effect from non-collinear compensated magnetism in Mn$_3$Pt

Altermagnets have recently emerged as a distinct class of magnetic systems that exhibit spin splitting of electronic bands while retaining zero net magnetization. This unique combination makes them a promising platform for time-reversal symmetry-breaking superconducting phenomena, although identifying concrete material platforms remains an important open challenge. Here, we develop a theory for the superconducting diode effect observed experimentally in a Mn$_3$Pt-superconductor heterostructure. Using both a symmetry analysis and model calculations on the breathing kagome lattice, we show how the altermagnetic spin textures in Mn$_3$Pt generate a spin splitting of the electronic bands that remains magnetization-free even in the presence of spin-orbit coupling and, upon taking into account the proximity coupling across the interface, produces a superconducting diode effect. We also demonstrate that the angular dependence of the critical current provides a probe of the magnetic order. We hope that our work will contribute to the understanding and further discovery of candidate materials for novel altermagnet-superconductor hybrid devices.

cond-mat.mes-hall↗

arXiv2026

Altermagnetic Superconducting Diode Effect in Mn$_{3}$Pt/Nb Heterostructures

Compensated magnetic orders that can split the spin-degeneracy of electronic bands have become a very active field of research. As opposed to spin-orbit coupling, the splitting resulting from these "altermagnets" is not a small relativistic correction and, in contrast to ferromagnets, not accompanied by a net magnetization and large stray fields. In particular, the theoretical analysis of the interplay of altermagnetism and superconductivity has taken center stage, while experimental investigations of their coexistence remain in their infancy. We here study heterostructures consisting of Nb thins films interfaced with the $T_1$ and $T_2$ phases of Mn$_3$Pt. These non-collinear magnetic states can be thought of as descendants from the same altermagnetic order in the absence of spin-orbit coupling. We demonstrate the non-trivial impact on the superconducting state of Nb, which exhibits a zero-field superconducting diode effect, despite the compensated ($T_2$) and nearly-compensated ($T_1$) magnetic order; the diode efficiencies can reach large values (up to 50$\%$). The diode effect is found to be highly sensitive to the form of the magnetic order, illustrating its potential as a symmetry probe. The complex magnetic field and temperature dependence hint at a rich interplay of multiple contributing mechanisms. Our results define a new materials paradigm for dissipationless spintronics and magnetization-free diode functionality, while motivating further exploration of non-collinear altermagnetic superconductors.

cond-mat.mes-hall↗

arXiv2025

Imaging Quantum Well States of Dirac Electrons in Exfoliated 3D Topological Insulators

We present a controlled mechanical exfoliation technique for bulk 3D topological insulators that yields atomically clean ultrathin flakes, enabling quantum well states (QWS) of Dirac electrons to be clearly resolved. Achieving reliable fabrication of pristine, high-quality two-dimensional layers suitable for atomic-scale spectroscopy remains a central experimental challenge in uncovering their emergent quantum states and realizing device-relevant functionalities. Atomically resolved scanning probe microscopy and micro-Raman spectroscopy reveal a strong correlation between Raman intensity and film thickness, enabling rapid identification of (Bi\textsubscript{0.1}Sb\textsubscript{0.9})\textsubscript{2}Te\textsubscript{3} flakes with desired thickness. High resolution scanning tunneling spectroscopy on exfoliated flakes with atomically flat terraces reveals QWS, driven by quantum confinement of Dirac electrons. This effect is rarely observed due to the electrons resistance to electrostatic confinement caused by Klein tunneling. The standard phase accumulation model accurately captures the characteristics of QWS and extracts the electronic band dispersion, showing excellent agreement with density functional theory calculations. Band structure calculation reveals that with increasing quantum-layer thickness, the interlayer coupling enhances the electronic dispersion, progressively reducing subband splitting and giving rise to bulk-like continuous bands. Spatially resolved spectroscopy around surface defects further confirms that QWS of Dirac electrons in topological insulators remains robust against defect scattering. This work paves the way for exploring diverse quantum phenomena and device applications through quantum confinement, surface-state engineering, and tunable topological phases.

cond-mat.mes-hall↗

arXiv2025

Controlled spin-to-charge conversion in noncollinear antiferromagnet-based Py/Mn$_{3}$Pt heterostructure

Noncollinear antiferromagnets (NCAFs) have recently emerged as promising candidates for future spintronic technologies, offering ultrafast switching, negligible stray fields allowing dense packing, and robustness against external magnetic perturbations. When interfaced with ferromagnets (FMs), they can strongly influence interfacial exchange and spin-torque mechanisms that enable manipulating magnetic order and realizing functionalities beyond conventional heavy metals (HMs) based FM/HM heterostructures. Here, we perform a broadband ferromagnetic resonance (FMR) study to systematically investigate the magnetization dynamics and spin-to-charge conversion in permalloy (Py) and Mn$_3$Pt bilayers. High-quality Py films provide a well-defined FMR spectra with a low Gilbert damping parameter ( $\alpha_{\mathrm{eff}} \approx 9.8 \times 10^{-3}$). We observe a pronounced enhancement of damping with intrinsic value $\alpha_{\mathrm{int}} \approx 3.1 \times 10^{-2}$ in the Py/Mn$_3$Pt bilayer, indicating efficient spin pumping into the NCAF layer. Frequency dependent linewidth analysis shows a predominantly Gilbert type damping in the bilayers and the corresponding effective spin-mixing conductance ( $g^{\uparrow\downarrow}_{\mathrm{eff}} \approx 4.8 \times 10^{18}$m$^{-2}$) is comparable to that of other high-performance antiferromagnetic heterostructures. These results are significant for establishing NCAFs as a candidate material for spin generation and highlights the potential of Py/Mn$_3$Pt bilayers for efficient and ultrafast spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Intertwined magnetic phase driven exchange bias and its impact on the anomalous Hall effect in MnBi$_4$Te$_7$

We report on the interplay between atomic scale inhomogeneity and competing magnetic phases and its effect on the anomalous Hall effect in the layered antiferromagnet MnBi$_4$Te$_7$, a natural superlattice hosting coexisting ferromagnetic and antiferromagnetic phases. Using a combination of scanning tunneling microscopy (STM), DC and AC magnetization, and magneto-transport measurements, we reveal that intrinsic Mn Bi antisite defects induce strong interlayer exchange coupling, giving rise to a robust exchange bias observed in both magnetic and Hall responses. The exchange bias undergoes a transition from asymmetric to symmetric behavior between 2 K and 6 K, indicating a temperature driven dynamical reconfiguration of interfacial spin structures. The training effect analysis revealed a stronger contribution of frozen spins at 2 K compared to 6 K, with relaxation amplitude shift from -264 Oe to 306 Oe. This sign reversal indicates a field-induced change in interfacial coupling. The temperature dependence of longitudinal resistivity and magnetization reveals complementary behavior, indicating the coexistence of two distinct spin states near the magnetic transition temperature. The phase fraction based resistivity model captures the distinct scattering mechanisms that govern electronic transport across different magnetic regimes. Our findings offer a direct link between microscopic disorder, interfacial magnetism and macroscopic topological phenomena in magnetic topological insulators.

cond-mat.str-el↗

arXiv2025

Occurrence of chemically tuned spin-texture controlled large intrinsic anomalous Hall effect in epitaxial $Mn_{3+x}Pt_{1-x}$ thin Films

Achieving atomically flat and stoichiometric films of chiral antiferromagnets (AFM) with two-dimensional kagome spin lattice structures are crucial for integrating these materials in both established and emerging antiferromagnetic spintronic devices. We report a systematic study of growth and anomalous Hall effect in (111)-oriented non-collinear AFM $Mn_{3+x}Pt_{1-x}$ films with varying compositions, for x = 0.09, 0.17, 0.28. Under optimized growth conditions, we obtain stoichiometric and atomically flat epitaxial $Mn_{3}Pt$(111) films on Si(100) substrate, as evidenced by X-ray reflectivity and scanning probe microscopy. The magnetization measurement showed that epitaxial strain can induce a magnetic phase transition from an incommensurate spin state ($T_2$) at x = 0.09 to a triangular all-in/all-out AFM spin order ($T_1$) at x = 0.17, 0.28. The change in magnetic ground state is evident in the transport characteristics, as the ($T_1$) state shows a robust intrinsic anomalous Hall effect (AHE) persisting till room temperature, in contrast to the ($T_2$) state where AHE is negligible. Our studies reveal a hole-dominated conductance with room temperature anomalous Hall conductivity (AHC) ranging from 5 to 16 $\Omega^{-1}cm^{-1}$ for x = 0.17 and 0.28 respectively. A scaling law is established, indicating that Hall resistivity is primarily governed by the intrinsic non-vanishing Berry curvature. The experimental observation corroborates the electronic structure calculations, which predicts the massless Dirac states near Fermi level in the bulk band structure, attributed to the presence of nonsymorphic glide symmetry. Additionally, we showed that chemical tuning via Mn doping can stabilize the required T$_1$ non-collinear AFM structure which enhance the topology driven intrinsic AHE.

cond-mat.mtrl-sci↗

arXiv2025

Anomalous Hall effect in highly c-plane oriented Mn$_{3}$Ge/Si(100) thin films grown by pulsed laser deposition

Antiferromagnetic Mn$_{3}$Ge with a non-collinear Kagome structures present exciting prospects for exploring Berry curvature driven anomalous Hall effects (AHE). Despite substantial progress in bulk systems, the synthesis of crystalline thin films directly on silicon with a hexagonal phase presents a particular challenge unless a buffer layer is employed. In this study, we report the synthesis of single phase c-plane oriented hexagonal Mn$_{3}$Ge(0001) films on Si(100) using pulsed laser deposition. Under suitable growth conditions, we obtain layer-by-layer films with atomically flat surfaces and interfaces. High-resolution scanning tunneling microscopy study reveals the detail surface atomic structures, where the surface Mn atoms spontaneously arrange into a Kagome lattice. Tunneling spectroscopy (dI/dV) measurement on the atomically resolved Kagome surface show a minima in local density of states near the Fermi level, likely originated from the Weyl crossings near K points. Despite the nearly vanishing magnetization, magnetotransport measurements in 30 nm $Mn_{3}$Ge(0001) films show anomalous Hall resistivity up to 0.41 ($\mu\Omega\cdot\text{cm}$) at 2 K. Our \textit{ab initio} calculations shed further light on the existence of topological features and the band structures in Mn$_{3+x}$Ge$_{1-x}$ with increasing Mn concentration $x$. The anomalous Hall response at room temperature in crystalline Mn$_{3}$Ge films on Si(100) offer promising potential for the development of antiferromagnetic spintronics.

cond-mat.mes-hall↗

arXiv2020

Signature of a pair of Majorana zero modes in superconducting gold surface states

Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers. Promising experimental progress has been made to demonstrate Majorana zero modes in materials with strong spin-orbit coupling proximity coupled to superconductors. Here we report signatures of Majorana zero modes in a new material platform utilizing the surface states of gold. Using scanning tunneling microscope to probe EuS islands grown on top of gold nanowires, we observe two well separated zero bias tunneling conductance peaks aligned along the direction of the applied magnetic field, as expected for a pair of Majorana zero modes. This platform has the advantage of having a robust energy scale and the possibility of realizing complex designs using lithographic methods.

cond-mat.supr-con↗

arXiv2019

Atomic-scale fragmentation and collapse of antiferromagnetic order in a doped Mott insulator

Disentangling the relationship between the insulating state with a charge gap and the magnetic order in an antiferromagnetic (AF) Mott insulator remains difficult due to inherent phase separation as the Mott state is perturbed. Measuring magnetic and electronic properties at the atomic length scales would provide crucial insight, but this is yet to be experimentally achieved. Here we use spectroscopic-imaging spin-polarized scanning tunneling microscopy (SP-STM) to visualize periodic spin-resolved modulations originating from the AF order in a relativistic Mott insulator Sr2IrO4, and study these as a function of doping. We find that near insulator-to-metal transition (IMT), the long-range AF order melts into a fragmented state with short-range AF correlations. Crucially, we discover that the short-range AF order is locally uncorrelated with the observed spectral gap magnitude. This strongly suggests that short range AF correlations are unlikely to be the culprit behind inhomogeneous gap closing and the emergence of pseudogap regions near IMT. Our work establishes SP-STM as a powerful tool for revealing atomic-scale magnetic information in complex oxides.

cond-mat.str-el↗

arXiv2019

Superconductivity in the surface state of noble metal gold and its Fermi level tuning by EuS dielectric

The induced superconductivity (SC) in a robust and scalable quantum material with strong Rashba spin-orbit coupling is particularly attractive for generating topological superconductivity and Majorana bound states (MBS). Gold (111) thin film has been proposed as a promising candidate because of the large Rashba energy, the predicted topological nature and the possibility for large-scale MBS device fabrications. We experimentally demonstrate two important steps towards achieving such a goal. We successfully show induced SC in the Shockley surface state (SS) of ultrathin Au(111) layers grown over epitaxial vanadium films, which is easily achievable on a wafer scale. The emergence of SC in the SS, which is physically separated from a bulk superconductor, is attained by indirect quasiparticle scattering processes instead of by conventional interfacial Andreev reflections. We further show the ability to tune the SS Fermi level (E_F) by interfacing SS with a high-k dielectric ferromagnetic insulator EuS. The shift of E_F from ~ 550 mV to ~34mV in superconducting SS is an important step towards realizing MBS in this robust system.

cond-mat.supr-con↗

arXiv2016

The role of electron confinement in Pd films for the oscillatory magnetic anisotropy in an adjacent Co layer

We demonstrate the interplay between quantum well states in Pd and the magnetic anisotropy in Pd/Co/Cu(001) by combined scanning tunneling spectroscopy (STS) and magneto optical Kerr effect (MOKE) measurements. Low temperature scanning tunneling spectroscopy reveals occupied and unoccupied quantum well states (QWS) in atomically flat Pd films on Co/Cu(001). These states give rise to sharp peaks in the differential conductance spectra. A quantitative analysis of the spectra reveals the electronic dispersion of the Pd(001) d-band ($Δ$$_5$-type) along the $Γ$-X direction. \textit{In-situ} MOKE experiments on Pd/Co/Cu(1, 1, 13) uncover a periodic variation of the in-plane uniaxial magnetic anisotropy as a function of Pd thickness with a period of 6 atomic layers Pd. STS shows that QWS in Pd cross the Fermi level with the same periodicity of 6 atomic layers. Backed by previous theoretical work we ascribe the variation of the magnetic anisotropy in Co to QWS in the Pd overlayer. Our results suggest a novel venue towards tailoring uniaxial magnetic anisotropy of ferromagnetic films by exploiting QWS in an adjacent material with large spin-orbit coupling.

cond-mat.mes-hall↗

arXiv2016

Evidence for a two-fold symmetric superconducting gap in a monolayer of FeSe$_{0.5}$Te$_{0.5}$ on a topological insulator

We present our investigations on the superconducting properties of monolayers of FeSe$_{0.5}$Te$_{0.5}$ grown on the 3D topological insulator Bi$_{2}$Se$_{1.2}$Te$_{1.8}$ using low temperature scanning tunneling spectroscopy (STS). While the morphology and the overall transition temperature resemble those of similarly doped bulk crystals, the spatially resolved spectroscopic data at 1.1K shows a much larger spatial inhomogeneity in the superconducting energy gaps. Despite the gap inhomogeneity all the spectra can be fitted with a two-fold anisotropic s-wave gap function. The two-fold nature of the gap symmetry is evident from the Bogoliubov quasiparticle interference (QPI) pattern which shows distinct C$_{2}$ symmetric scattering intensities. We argue that the gap inhomogeneity emerges as a result of intrinsic disorder in our system similar to disordered conventional superconductors. Even though most of our findings clearly differ from the current understanding of the corresponding bulk system, it provides an ideal platform to study unconventional superconductivity in Fe chalcogenides thinned down to a single layer and in close proximity to a topological insulator.

cond-mat.supr-con↗

arXiv2016

Reorientation of the bicollinear antiferromagnetic structure at the surface of Fe$_{1+y}$Te bulk and thin films

Establishing the relation between the ubiquitous antiferromagnetism in the non-superconducting parent compounds of unconventional superconductors and their superconducting phase is believed to be important for the understanding of the complex physics in these materials. Going from the bulk systems to thin films strongly affects the phase diagram of unconventional superconductors. For Fe$_{1+y}$Te, the parent compound of the Fe$_{1+y}$Se$_{1-x}$Te$_x$ superconductors, bulk sensitive neutron diffraction has revealed an in-plane oriented bicollinear antiferromagnetic structure. Here, we show by spin-resolved scanning tunneling microscopy that on the surfaces of bulk Fe$_{1+y}$Te, as well as on thin films grown on the topological insulator Bi$_2$Te$_3$, the spin direction is canted both away from the surface plane and from the high-symmetry directions of the surface unit cell, while keeping the bicollinear magnetic structure. Our results demonstrate that the magnetism at the Fe-chalcogenide surface markedly deviates from a simple in-plane oriented bicollinear antiferromagnetic structure, which implies that the pairing at the surface of the related superconducting compounds might be different from that in the bulk.

cond-mat.str-el↗

arXiv2016

Evidence for interfacial superconductivity in a bi-collinear antiferromagnetically ordered FeTe monolayer on a topological insulator

The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition temperatures through interface effects [4]. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture of this relationship remains elusive [1] due to the lack of data with atomic spatial resolution [5-7]. Here, we present a spin-polarized scanning tunneling spectroscopy (SP-STS) study of ultrathin FeTe$_{1-x}$Se$_x$ (x = 0, 0.5) films grown on prototypical Bi-based bulk topological insulators. Surprisingly, we find an energy gap at the Fermi level indicating superconducting correlations up to Tc ~ 6 K for one unit cell thin FeTe layers grown on Bi2Te3 substrates, in contrast to the non-superconducting FeTe bulk compound [8]. Moreover, SP-STS reveals that the energy gap spatially coexists with bicollinear AFM order. This finding opens novel perspectives for theoretical studies of competing orders in Fe-based superconductors as well as for experimental investigations of exotic phases in heterostructures of topological insulators and superconducting layers.

cond-mat.supr-con↗