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Suma Al-Hunaishi

Publications and source records attributed to Suma Al-Hunaishi.

2 recordsLinked to original sources

Broadband and Large-Multimode Quantum Optical Storage with Rare-Earth Ions in Solids

Broadband quantum memory devices are essential elements for future quantum networks. Here we propose a broadband quantum memory scheme called Hole Anti-hole Grating Echo Memory (HAGEM) for rare-earth ions in solids, which can be implemented with most of the present rare-earth ions hosted in various types of solids. Using HAGEM, a quantum memory device with one billion temporal modes per second can be developed with current available technologies. To validate the memory protocol, we conducted some proof-of-concept experiments. We provide a Eu$^\text{3+}$ molecular complex with special hyperfine level structures of which the hyperfine level separations are in a specific mathematical correlation that can be obtained by harnessing chemical engineering. Using the proposed memory protocol and material, we experimentally demonstrate a single-mode quantum optical storage efficiency of 14.9% and a memory bandwidth of 200MHz, which can easily be extended to a few GHz. In addition, a multi-mode storage of four temporal modes is achieved with a storage efficiency of 1.3%. Broadband & large-multimode quantum memory device with a long storage time enabled by HAGEM integrating with the current available entangled photon pair source and tunable delay lines, a quantum repeater network with an entanglement distribution rate on the order of 1kHz - 10kHz can be created with a communication distance around 100km. This will greatly facilitate the development of quantum networks in near future.

quant-ph↗

Rare-earth doped yttrium silicate (Y2SiO5) thin films grown by chemical vapour deposition for quantum technologies

Yttrium orthosilicate (Y2SiO5 - YSO) is one of the most promising crystals to host rare-earth (RE) ions for quantum technologies applications. In this matrix, they indeed exhibit narrow optical and spin linewidths that can be exploited to develop quantum memories or quantum information processing capabilities. In this paper, we propose a new method to grow RE doped silicate thin films on silicon wafers based on direct liquid injection chemical vapour deposition (DLI-CVD). We optimize the deposition and annealing conditions to achieve formation of the high temperature X2-YSO phase. The phase purity and crystalline quality of the films are assessed by evaluating the optical properties of Eu3+ ions embedded in this oxide matrix. In view of the results, we discuss the possible phase formation mechanisms, and the potential of this new wafer-compatible form of YSO for quantum technologies applications.

physics.optics↗