arXiv subjects

Suman Mundlia

Publications and source records attributed to Suman Mundlia.

3 recordsLinked to original sources

arXiv2025

Selective Amplification of the Topological Hall Signal in Cr$_2$Te$_3$: The Role of Molecular Exchange Coupling

Layered magnetic transition-metal chalcogenides (TMCs) are a focal point of research, revealing a variety of intriguing magnetic and topological ground states. Within this family of TMCs, chromium telluride has garnered significant attention because of its excellent tunability in magnetic response, owing to the presence of competing magnetic exchange interactions. We here demonstrate the manipulation of magnetic anisotropy in ultra-thin Cr$_2$Te$_3$ films through growth engineering leading to a controlled transition from in-plane to out-of-plane orientation with an intermediate non-coplanar magnetic ground phase characterized by a topological Hall effect. Moreover, interfacing these films with Vanadyl phthalocyanine (VOPc) molecules prominently enhances the non-coplanar magnetic phase, attributing its presence to the competing interfacial magnetic exchange interactions over the spin-orbit-driven interfacial effects. These findings pave the way for the realization of novel topological spintronic devices through interface-modulated exchange coupling.

cond-mat.mtrl-sci↗

arXiv2024

Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.

physics.app-ph↗

arXiv2020

Evidence of Spin-Glass state in Molecular Exchange-Bias System

In conventional exchange-bias system comprising of a bilayer film of ferromagnet (FM) and antiferromagnet (AFM), investigating the role of spin-disorder and spin-frustration inside the AFM and at the interface has been crucial in understanding the fundamental mechanism controlling the exchange-bias -- an effect that leads to a horizontal shift in the magnetization hysteresis response of the FM. Similarly, in the recently reported monolayer molecular exchange-bias effect requiring no AFM layer, probing magnetic-disorder at the FM/molecule interface or inside the FM layer can provide new insights into the origin of molecular exchange-bias and the associated physics. In this article, by cooling the Fe/metal-phthalocyanine devices in oscillating magnetic field, we demonstrate a characteristic temperature dependent response of exchange-bias shift and ferromagnet coercivity that is supportive of a spin-glass behavior. Here, the origin of spin-glass is attributed to the spin frustration created in the magnetic structure of the Fe layer, which was absent in our reference-Fe studies. These results highlight the strong influence of FM/molecule interface pi-d hybridization on the magnetic exchange interactions extending deeper into the FM layer.

cond-mat.mtrl-sci↗