arXiv subjects

Sumeet Walia

Publications and source records attributed to Sumeet Walia.

10 recordsLinked to original sources

arXiv2026

AI based design of 2D material integrated optical polarizers

On-chip integration of highly anisotropic two-dimensional (2D) materials offers new opportunities for realizing high performance polarization selective devices. Obtaining optimized designs for such devices requires extensively sweeping large parameter spaces, which in conventional approaches relies on massive mode simulations that demand considerable computational resources. Here, we address this limitation by developing a machine learning (ML) model based on fully connected neural networks (FCNNs). Trained by using mode simulation results for low resolution structural parameters, the FCNN model can accurately predict polarizer figures of merits (FOMs) for high resolution parameters and rapidly map the global variation trend across the entire parameter space. We test the performance of the FCNN model using two types of polarizers with 2D graphene oxide (GO) and molybdenum disulfide (MoS2). Results show that, compared to conventional mode simulation approach, our approach can not only reduce the overall computing time by about 4 orders of magnitude, but also achieve highly accurate FOM predictions with an average deviation of less than 0.04. In addition, the measured FOM values for the fabricated devices show good agreement with the predicted ones, with discrepancies remaining below 0.2. These results validate artificial intelligence (AI) as an effective approach for designing and optimizing 2D-material based optical polarizers with high efficiency.

physics.optics↗

arXiv2026

Enhanced selfphase modulation in silicon nitride waveguides with integrated 2D MoS2 films

On-chip integration of 2D materials provides a promising route towards next-generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self-phase modulation (SPM) is experimentally demonstrated in silicon nitride (Si3N4) waveguides integrated with 2D monolayer molybdenum disulfide (MoS2) films. Monolayer MoS2 films with ultrahigh optical nonlinearity are synthesized via low-pressure chemical vapor deposition (LPCVD) and subsequently transferred onto Si3N4 waveguides, with precise control of the film coating length and placement achieved by selectively opening windows on the chip silica upper cladding. Detailed SPM measurements at telecom wavelengths are performed using fabricated waveguides with various MoS2 film coating lengths. Compared to devices without MoS2, increased spectral broadening of sub-picosecond optical pulses is observed for the hybrid devices, achieving a broadening factor of up to ~ 2.4 for a device with a 1.4-mm-long MoS2 film. Theoretical fitting of the experimental results further reveals an increase of up to ~27 fold in the nonlinear parameter (γ) for the hybrid MoS2 / Si3N4 waveguides and an equivalent Kerr coefficient (n2) of MoS2 nearly 5 orders of magnitude higher than Si3N4. These results confirm the effectiveness of on-chip integration of 2D MoS2 films to enhance the nonlinear optical performance of integrated photonic devices.

physics.optics↗

arXiv2025

Silicon Integrated Photonic Waveguide Polarizers with 2D MoS2 Films

Polarization control is of fundamental importance for modern optical systems, and optical polarizers serve as critical components for enabling this functionality. Here, we experimentally demonstrate optical polarizers by integrating 2D molybdenum disulfide (MoS2) films onto silicon photonic waveguides. High-quality monolayer MoS2 films with highly anisotropic light absorption are synthesized via a low-pressure chemical vapor deposition (LPCVD) method and subsequently transferred onto silicon-on-insulator (SOI) nanowire waveguides to fabricate integrated optical polarizers. Detailed measurements are carried out for the fabricated devices with various MoS2 film coating lengths and silicon waveguide geometry. The results show that a maximum polarization-dependent loss of ~21 dB is achieved, together with a high figure of merit of ~4.2. In addition, the hybrid waveguide polarizers exhibit broad operation bandwidth exceeding ~100 nm and excellent power durability. These results highlight the strong potential for on-chip integration of 2D MoS2 films to implement high-performance polarization selective devices.

physics.optics↗

arXiv2023

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems.

physics.app-ph↗

arXiv2023

The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS$_2$ for Broadband Photodetection

Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broadband wavelength excitation - especially beyond the material's nominal band gap - while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling - which we term the acoustophotoelectric effect - in SnS$_2$ that facilitates efficient photodetection through the application of 100-MHz-order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS$_2$, but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broadband photodetection beyond the visible light range, whilst maintaining pA-order dark currents - remarkably without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to eight orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS$_2$-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.

physics.app-ph↗

arXiv2023

Spiking Neural Networks for Detecting Satellite-Based Internet-of-Things Signals

With the rapid growth of IoT networks, ubiquitous coverage is becoming increasingly necessary. Low Earth Orbit (LEO) satellite constellations for IoT have been proposed to provide coverage to regions where terrestrial systems cannot. However, LEO constellations for uplink communications are severely limited by the high density of user devices, which causes a high level of co-channel interference. This research presents a novel framework that utilizes spiking neural networks (SNNs) to detect IoT signals in the presence of uplink interference. The key advantage of SNNs is the extremely low power consumption relative to traditional deep learning (DL) networks. The performance of the spiking-based neural network detectors is compared against state-of-the-art DL networks and the conventional matched filter detector. Results indicate that both DL and SNN-based receivers surpass the matched filter detector in interference-heavy scenarios, owing to their capacity to effectively distinguish target signals amidst co-channel interference. Moreover, our work highlights the ultra-low power consumption of SNNs compared to other DL methods for signal detection. The strong detection performance and low power consumption of SNNs make them particularly suitable for onboard signal detection in IoT LEO satellites, especially in high interference conditions.

cs.IT↗

arXiv2021

Helicity-selective Raman scattering from in-plane anisotropic α-MoO$_3$

Hyperbolic crystals like α-MoO$_3$ can support large wavevectors and photon density as compared to the commonly used dielectric crystals, which makes them a highly desirable platform for compact photonic devices. The extreme anisotropy of the dielectric constant in these crystals is intricately linked with the anisotropic character of the phonons, which along with photon confinement leads to the rich physics of phonon polaritons. However, the chiral nature of phonons in these hyperbolic crystals have not been studied in detail. In this study, we report our observations of helicity selective Raman scattering from flakes of α-MoO$_3$. Both helicity-preserving and helicity-reversing Raman scattering are observed. We observe that helical selectivity is largely governed by the underlying crystal symmetry. This study shed light on the chiral character of the high symmetry phonons in these hyperbolic crystals. It paves the way for exploiting proposed schemes of coupling chiral phonon modes into propagating surface plasmon polaritons and for compact photonic circuits based on helical polarized light.

physics.optics↗

arXiv2018

Nanoscale compositional evolution in complex oxide based resistive memories

Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional oxides is required to tune the resistive switching characteristics for enhanced memory performance. Herein, we present the micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching. Oxygen deficient amorphous chromium doped strontium titanate (Cr:$a$-SrTiO$_{3-x}$) based resistance change memories are fabricated in a Ti/Cr:$a$-SrTiO$_{3-x}$ heterostructure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states shows that the micro/nano-structural changes in amorphous complex oxide and associated redox processes define the resistive switching behavior. These experimental results provide insights and supporting material for Ref. [1].

cond-mat.mtrl-sci↗

arXiv2018

High order synaptic learning in neuro-mimicking resistive memories

Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the functional oxides or engineering the external programming hardware. However, high device-to-device variability in memristors induced by the electroforming process and complicated programming hardware are among the key challenges that hinder achieving biomimetic neuromorphic networks. Here, an electroforming-free and complementary metal oxide semiconductor (CMOS)-compatible memristor based on oxygen-deficient SrTiO$_{3-x}$ (STO$_x$) is reported to imitate synaptic learning rules. Through spectroscopic and cross-sectional transmission electron microscopic analyses, electroforming-free characteristics are attributed to the bandgap reduction of STO$_x$ by the formation of oxygen vacancies. The potential of such memristors to behave as artificial synapses is demonstrated by successfully implementing high order time- and rate-dependent synaptic learning rules. Also, a simple hybrid CMOS-memristor approach is presented to implement a variety of synaptic learning rules. Results are benchmarked against biological measurements form hippocampal and visual cortices with good agreement. This demonstration is a step towards the realization of large scale adaptive neuromorphic computation and networks.

cond-mat.dis-nn↗

arXiv2015

In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.

cond-mat.mtrl-sci↗