Sung-Yul L. Park | Searcharxiv

arXiv2026

Thin-capping layer epitaxial quantum dots for near-field quantum photonics

Epitaxial quantum dots (QDs) are widely recognised as one of the best quantum light sources, given their good stability, brightness, quantum efficiency and coherence. To reach such properties, QDs are protected from potentially detrimental surface states by a relatively thick capping layer, typically exceeding 50nm. This prevents the implementation of near-field effects, like plasmonic-based ones, that can dramatically increase the light-matter interaction, since the control of the spontaneous emission dynamics and directionality of the emission can only occur if the emitter is in close proximity (typically tens of nanometers or less) from the metallic structures. In this work, we report the growth and optical characterisation of InAs/GaAs QDs with GaAs capping layer thickness of 10nm, 20nm, and a more standard 95nm. Remarkably, we observe emission linewidths up to 5 times smaller than previously reported, with unperturbed excitonic lifetimes. These results demonstrate that the epitaxial QD's high optical quality can be maintained even when the emitters are at reduced distances from the surface, opening the path for the exploration of near-field light-matter interactions with coherent and stable emitters, suitable for quantum technology applications.

physics.optics↗

arXiv2022

Single quantum dot selection and tailor-made photonic device integration using nanoscale focus pinspot

Among the diverse platforms of quantum light sources, epitaxially grown semiconductor quantum dots (QDs) are one of the most attractive workhorses for realizing various quantum photonic technologies owing to their outstanding brightness and scalability. There exist various material systems for these QDs based on their appropriate emission bandwidth; however, only a few material systems have successfully grown single or low-density QDs, which are essential for quantum light sources. In most other material systems, it is difficult to realize low-density QDs, and the mesa-etching process is usually undergone in order to reduce their density. Nevertheless, the etching process irreversibly destroys the medium near the QD, which is detrimental to in-plane device integration. In this study, we apply a nondestructive luminescence picking method termed as nanoscale focus pinspot (NFP) using helium ion microscopy to reduce the luminous QD density while retaining the surrounding medium. Given that the NFP can precisely manipulate the luminescence at nanoscale resolution, a photonic device can be deterministically fabricated on the target QD matched from both spatial and spectral points of view. After applying the NFP, we extract only a single QD emission out of the high-density ensemble QD emission. Moreover, the photonic structure of a circular Bragg reflector is deterministically integrated with the selected QD, and the extraction efficiency of the QD emission has been improved 27 times. Furthermore, this technique does not destroy the medium and only controls the luminescence. Hence, it is highly applicable to various photonic structures, including photonic waveguides or photonic crystal cavities regardless of their materials.

physics.app-ph↗