arXiv subjects

Sungkyun Park

Publications and source records attributed to Sungkyun Park.

26 records · Page 2Linked to original sources

arXiv2021

Tailoring topological Hall effect in SrRuO3/SrTiO3 superlattices

Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magnetic interactions and the resultant formation of topological magnetic phases, as the heterostructuring approach provides an accessible controllability to modulate the magnetic interactions. In this study, we have observed that the Hall effect of SrRuO3/SrTiO3 superlattices varies nonmonotonically with the repetition number (z). Using Monte Carlo simulations, we identify a possible origin of this experimental observation: the interplay between the Dzyaloshinskii-Moriya interaction and dipole-dipole interaction, which have differing z-dependence, might result in a z-dependent modulation of topological magnetic phases. This approach provides not only a collective understanding of the magnetic interactions in artificial heterostructures but also a facile control over the skyrmion phases.

cond-mat.str-el↗

arXiv2020

Propagation control of octahedral tilt in SrRuO3 via artificial heterostructuring

Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin-film lattice parameters. In this study, we propose a method to selectively engineer the octahedral bonding geometries, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering has been developed using atomically designed SrRuO3/SrTiO3 superlattices. In particular, the propagation of RuO6 octahedral tilting within the SrRuO3 layers having identical thicknesses was systematically controlled by varying the thickness of adjacent SrTiO3 layers. This led to a substantial modification in the electromagnetic properties of the SrRuO3 layer, significantly enhancing the magnetic moment of Ru. Our approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties.

cond-mat.str-el↗

arXiv2019

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.

cond-mat.str-el↗

arXiv2019

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets.

cond-mat.mtrl-sci↗

arXiv2018

Ferroelectric polarization rotation in order-disorder-type LiNbO3 thin films

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.

physics.app-ph↗

arXiv2017

Tuning electromagnetic properties of SrRuO3 epitaxial thin films via atomic control of cation vacancies

Elemental defects in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we investigated the physical properties of epitaxial SrRuO3 thin films by systematically manipulating cation and/or oxygen vacancies, via changing the oxygen partial pressure (P(O2)) during the pulsed laser epitaxy (PLE) growth. Ru vacancies in the low-P(O2)-grown SrRuO3 thin films induce lattice expansion with the suppression of the ferromagnetic TC down to ~120 K. Sr vacancies also disturb the ferromagnetic ordering, even though Sr is not a magnetic element. Our results indicate that both A and B cation vacancies in an ABO3 perovskite can be systematically engineered via PLE, and the structural, electrical, and magnetic properties can be tailored accordingly.

cond-mat.mtrl-sci↗

arXiv2017

Enhanced electrocatalytic activity via phase transitions in strongly correlated SrRuO3 thin films

Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in understanding the electrochemical activities. Here, we demonstrate a close correlation between the phase transitions and oxygen evolution reaction (OER) in a strongly correlated SrRuO3. By systematically introducing Ru-O vacancies into the single-crystalline SrRuO3 epitaxial thin films, we induced phase transition in crystalline symmetry which resulted in corresponding modification in the electronic structure. The modified electronic structure significantly affect the electrochemical activities, so a 30% decrease in the overpotential for the OER activity was achieved. Our study suggests that a substantial enhancement in the OER activity can be realized even within single material systems, by rational design and engineering of their crystal and electronic structures.

cond-mat.str-el↗

arXiv2014

Growth control of the oxidation state in vanadium oxide thin films

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2(+3)O3, V(+4)O2, and V2(+5)O5. A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (< 10 mTorr) or higher P(O2) (> 25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

cond-mat.mtrl-sci↗