Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition
We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commercial bolometer.
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