arXiv subjects

Sunil Wilfred D'Souza

Publications and source records attributed to Sunil Wilfred D'Souza.

6 recordsLinked to original sources

arXiv2025

Reexamining Circular Dichroism in Photoemission From a Topological Insulator

The orbital angular momentum (OAM) of electron states is an essential ingredient for topological and quantum geometric quantities in solids. For example, Dirac surface states with helical spin- and orbital-angular momenta are a hallmark of a 3D topological insulator. Angle-resolved photoemission spectroscopy (ARPES) with variable circular light polarization, known as circular dichroism (CD), has been assumed to be a direct probe of OAM and, by proxy, of the Berry curvature of electronic bands in energy- and momentum-space. Indeed, topological surface states have been shown to exhibit angle-dependent CD (CDAD), and more broadly, CD is often interpreted as evidence of spin-orbit coupling. Meanwhile, it is well-established that CD originates from the photoemission matrix elements, which can have extrinsic contributions related to the experimental geometry and the inherently broken inversion symmetry at the sample surface. Therefore, it is important to broadly examine CD-ARPES to determine the scenarios in which it provides a robust probe of intrinsic material physics. We performed CD-ARPES on the canonical topological insulator $\mathrm{Bi}_2\mathrm{Se}_3$ over a wide range of incident photon energies. Not only do we observe angle-dependent CD in the surface states, as expected, but we also find CD of a similar magnitude in virtually all bulk bands. Since OAM is forbidden by inversion symmetry in the bulk, we conclude this originates from symmetry-breaking in the photoemission process. Comparison with theoretical calculations supports this view and suggests that $\textit{hidden}$ OAM - localized to atomic sites within each unit cell - contributes significantly. Additional effects, including inter-atomic interference and final-state resonances, are responsible for the rapid variation of the CDAD signal with photon energy.

cond-mat.mtrl-sci↗

arXiv2022

Collective topological spin dynamics in a correlated spin glass

The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric semiconductor is found to reverse with current pulses six orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Lastly, we present a novel methodology to controllably harness this stochastic magnetization dynamics, allowing us to detect spatiotemporal nucleation of topological spin textures we term ``skyrmiverres''.

cond-mat.mtrl-sci↗

arXiv2022

Role of chemical disorder in tuning the Weyl points in vanadium doped Co$_2$TiSn

The lack of time-reversal symmetry and Weyl fermions give exotic transport properties to Co-based Heusler alloys. In the present study, we have investigated the role of chemical disorder on the variation of Weyl points in Co\textsubscript{2}Ti\textsubscript{1-x}V\textsubscript{x}Sn magnetic Weyl semimetal candidate. We employ the first principle approach to track the evolution of the nodal lines responsible for the appearance of Weyl node in Co$_2$TiSn as a function of V substitution in place of Ti. By increasing the V concentration in place of Ti, the nodal line moves toward Fermi level and remains at Fermi level around the middle composition. Further increase of the V content, leads shifting of nodal line away from Fermi level. Density of state calculation shows half-metallic behavior for the entire range of composition. The magnetic moment on each Co atom as a function of V concentration increases linearly up to x=0.4, and after that, it starts decreasing. We also investigated the evolution of the Weyl nodes and Fermi arcs with chemical doping. The first-principles calculations reveal that via replacing almost half of the Ti with V, the intrinsic anomalous Hall conductivity increased twice as compared to the undoped composition. Our results indicate that the composition close to the 50\% V doped Co$_2$TiSn, will be an ideal composition for the experimental investigation of Weyl physics.

cond-mat.mtrl-sci↗

arXiv2018

Influence of anti-site disorder and electron-electron correlations on the electronic structure of CeMnNi$_4$

CeMnNi$_4$ exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3$d$ ($U_{Ni}$) and Mn 3$d$ ($U_{Mn}$) electrons in explaining the valence band of this multiply correlated material. We show that Mn-Ni anti-site disorder as well as $U_{Ni}$ play crucial role in enhancing its spin polarization: anti-site disorder broadens a Ni 3$d$ minority-spin peak close to the Fermi level ($E_F$), while an increase in $U_{Ni}$ shifts it towards $E_F$, both leading to a significant increase of minority-spin states at $E_F$. Furthermore, rare occurrence of a valence state transition between the bulk and the surface is demonstrated highlighting the importance of HAXPES in resolving the electronic structure of materials unhindered by surface effects.

cond-mat.mtrl-sci↗

arXiv2014

Chemical disorder as engineering tool for spin-polarizationin Mn3Ga-based Heusler systems

Our study highlights spin-polarization mechanisms in metals, by focusing on the mobilities of conducting electrons with different spins instead of their quantities. Here, we engineer electron mobility by applying chemical disorder induced by non-stoichiometric variations. As a practical example, we discuss the scheme that establishes such variations in tetragonal Mn3Ga Heusler material. We justify this approach using first-principles calculations of the spin-projected conductivity components based on the Kubo-Greenwood formalism. It follows that, in majority of the cases, even a small substitution of some other transition element instead of Mn may lead to a substantial increase in spin-polarization along the tetragonal axis.

cond-mat.mtrl-sci↗

arXiv2014

Magnetic properties and electronic structure of Mn-Ni-Ga magnetic shape memory alloys

Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn$_2$NiGa and Mn$_{1+x}$Ni$_{2-x}$Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn$_2$NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of Mn$_{\rm Ni}$ (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect[1] is included in the calculation. A reasonable estimate of $T_C$ for Mn$_2$NiGa is obtained from the exchange parameters for the disordered structure. Disorder influences the electronic structure of Mn$_2$NiGa through overall broadening of the density of states and a decrease in the exchange splitting. Inclusion of antisite defects marginally broaden the minority spin partial DOS (PDOS), while the majority spin PDOS is hardly affected. For Mn$_{1+x}$Ni$_{2-x}$Ga where 1$\geq$$x$$\geq$0, as $x$ decreases, Mn$_{\rm Mn}$ moment increases while Mn$_{\rm Ni}$ moment decreases in both austenite and martensite phases. For $x$$\geq$ 0.25, the total moment of the martensite phase is smaller compared to the austenite phase, which indicates possible occurrence of inverse magnetocaloric effect. We find that the redistribution of Ni 3$d$- Mn$_{\rm Ni}$ 3$d$ minority spin electron states close to the Fermi level is primarily responsible for the stability of the martensite phase in Mn-Ni-Ga.

cond-mat.mtrl-sci↗