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Suresh Chandra Joshi

Publications and source records attributed to Suresh Chandra Joshi.

6 recordsLinked to original sources

Charge transfer and competing symmetry breaking drive orbital reconstruction and emergent ferromagnetism in insulating oxide superlattices

Electron correlation, hopping, and ligand-to-metal charge transfer collectively lead to diverse electronic and magnetic phenomena in 3$d$ transition-metal oxides, where directional d orbitals make hopping highly sensitive to symmetry-dependent orbital overlap. Heterostructure engineering with atomically flat interfaces adds symmetry-breaking charge transfer as a further route to emergent behavior, yet whether interfacial mismatch between constituent oxides of a superlattice shapes ground states independent of epitaxial strain remains unresolved. Here we examine superlattices combining NdNiO$_3$ with Mott-insulating NdMnO$_3$. Varying layer thickness and combining transport with X-ray spectroscopy, we show that electron transfer from NdMnO$_3$ to NdNiO$_3$ drives a room-temperature insulating state with a distinct electronic structure, accompanied by a reversal in orbital symmetry beyond simple strain considerations, underscoring the interface's central role. These reconstructions stabilize an emergent ferromagnetic insulating state arising from interfacial Ni$^{2+}$-O-Mn$^{4+}$ superexchange. Our results establish a pathway to interface-engineered ferromagnetic insulating phases via competing interactions, with potential for spin-insulatronic applications.

cond-mat.mtrl-sci

Coupled phase transitions in crystalline solids with extreme chemical disorder

Structural phase transitions often couple to magnetic and electronic degrees of freedom, enabling emergent phenomena in solids. In high-entropy oxides (HEOs), which typically stabilize in highly symmetric cubic phases, such transitions are considered rare due to the extreme chemical disorder-analogous to the behavior observed in high-entropy alloys. This raises a fundamental question: can the rich physics of coupled phase transitions persist in such disordered systems? Here, we show that targeted design of compositionally complex oxides (CCOs) can trigger symmetry-lowering transitions, with spinel-type materials serving as a representative case. For instance, [Mn$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$]Cr$_2$O$_4$, having two Jahn-Teller (J-T) active ions, undergoes two successive coupled structural transitions upon cooling: an orbital-driven transition at 100 K and a magnetism-driven transition at 40 K. Systematic substitution of $A$-site cations reveals that both Ni and Cu are essential for these transitions. Element specific local structure investigations uncover distinct and opposing local distortions around Ni and Cu, while Mn, Co, and Zn remain largely undistorted. These results establish that CCOs can host coupled phase transitions through `cooperation via competition' among local distortions in a chemically disordered lattice. This discovery expands the design principles for complex oxides, introducing a new paradigm for tuning structural and functional properties in high-entropy systems beyond conventional symmetry constraints.

cond-mat.mtrl-sci

Extreme disorder in crystalline perovskite oxide: a new paradigm in quantum materials research

Perovskite oxides ($AB$O$_3$) have long been central to the advancement of modern condensed matter physics, owing to their rich and tunable electronic and magnetic properties. The quest to understand their various entangled phases has spurred the development of both cutting-edge experimental tools and innovative theoretical frameworks. In recent times, the emergence of high entropy oxides - materials in which five or more elements share a single crystallographic site - has introduced a powerful new paradigm in materials design. Embedding such extreme chemical disorder within the perovskite framework has opened vast opportunities for realizing novel physical phenomena inaccessible in conventional oxides. This review surveys the rapid advances in the synthesis, characterization, and exploration of the electronic and magnetic properties of compositionally complex perovskite oxides, offering key insights and highlighting promising avenues for future research.

cond-mat.mtrl-sci

Mean field magnetism and spin frustration in a double perovskite oxide with compositional complexity

The rise of high-entropy oxides as a major functional materials design principle in recent years has prompted us to investigate how compositional disorder affects long-range magnetic ordering in double perovskite oxides. Since ferromagnetic insulators are emerging as an important platform for lossless spintronics, we consider the $RE_2$NiMnO$_6$ ($RE$ : rare-earth) family and investigate single-crystalline films of (La$_{0.4}$Nd$_{0.4}$Sm$_{0.4}$Gd$_{0.4}$Y$_{0.4}$)NiMnO$_{6}$ grown on SrTiO$_3$ (001) substrates in this work. Despite configurational disorder and high cationic size variance at the $RE$ site, the material exhibits robust ferromagnetic ordering with a Curie temperature ($T_\mathrm{c}$) of approximately 150 K. This $T_\mathrm{c}$ is consistent with the expectation based on consideration of the average ionic radii of the rare-earth ($RE$) sites in the bulk $RE_2$NiMnO$_6$. Below $T_\mathrm{c}$, Raman spectroscopy measurement finds a deviation from anharmonic behavior, where the phonon renormalization aligns with a mean-field approximation of spin-spin correlation. At lower temperature, magnetic $RE$ ions also contributed to the magnetic behavior and the system displays a reentrant spin-glass-like behavior. This study demonstrates that while a mean-field approach serves as a viable starting point for predicting the long-range transition temperature, microscopic details of the complex magnetic interactions are essential for understanding the low-temperature phase.

cond-mat.mtrl-sci

Janus-faced influence of oxygen vacancy in high entropy oxide films with Mott electrons

Contrary to traditional approaches, high entropy oxides (HEOs) strategically employ cationic disorder to engineer tunable functionalities. This disorder, stemming from multiple elements at the same crystallographic site, disrupts local symmetry and induces local distortions. By examining a series of single-crystalline [La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$]NiO$_{3-δ}$ thin films, we demonstrate herein that the creation of oxygen vacancies (OVs) further offers a powerful means of tailoring electronic behavior of HEOs by concurrently introducing disorder in the oxygen sublattice and doping electrons into the system. Increasing OV concentration leads to a monotonic increase in room-temperature sheet resistance. A striking feature is the Janus-faced response of the metal-insulator transition (MIT) to OVs due to the interplay among correlation energy scales, electron doping, and disorder. Unlike the monotonous influence of OV observed for the MIT in VO$_2$ and V$_2$O$_3$, initial OV doping lowers the MIT temperature here, whereas higher OV levels completely suppress the metallic phase. Magnetotransport measurements further reveal weak localization, strong localization as a function of $δ$. Moreover, the disorder on both $RE$ and oxygen sublattices is responsible for the Mott-Anderson insulator state. These findings surpass the scope of the recently featured `electron antidoping' effect and demonstrate the promising opportunity to utilize OV engineering of HEOs for Mottronics and optoelectronics applications.

cond-mat.str-el

Site-selective polar compensation of Mott electrons in a double perovskite heterointerface

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step towards this broad goal. We investigate this by studying the interface between a prototypical insulating DPO Nd$_2$NiMnO$_6$ and a wide-band gap insulator SrTiO$_3$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

cond-mat.mtrl-sci