arXiv subjects

Surinder P. Singh

Publications and source records attributed to Surinder P. Singh.

5 recordsLinked to original sources

arXiv2026

Power-Law Suppression of Superfluid Stiffness in High-Kinetic-Inductance NbN Films

Disorder is a powerful route to high kinetic inductance in superconducting ultrathin films, enabling compact high-impedance quantum circuits. This functionality, however, comes at the cost of reduced phase rigidity and potentially anomalous electrodynamics. Here, we use NbN microwave resonators with thicknesses down to 2.8 nm and sheet kinetic inductance up to 300 pH per square to probe how this trade-off reshapes the superconducting response. In the thinnest films, transport shows signatures of a Berezinskii-Kosterlitz-Thouless transition, while the microwave response reveals a pronounced low-temperature power-law suppression of the superfluid stiffness, inconsistent with Mattis-Bardeen theory. With increasing thickness, this anomalous regime is progressively suppressed, marking a continuous crossover toward conventional, gap-dominated electrodynamics. Cross-sectional transmission electron microscopy reveals a nanocrystalline twin-domain structure, pointing to oriented microstructural disorder as a crucial factor in the observed response. Overall, the crossover is governed by the ratio of superfluid stiffness to pairing energy, Theta(0)/Tc, identifying this ratio as a parameter governing the boundary between phase-fluctuation-dominated and gap-dominated superconducting electrodynamics in disordered nanofilms.

cond-mat.supr-con↗

arXiv2024

Berezinskii-Kosterlitz-Thouless to BCS-like superconducting transition crossover driven by weak magnetic fields in ultra-thin NbN films

The Berezinskii-Kosterlitz-Thouless (BKT) transition in ultra-thin NbN films is investigated in the presence of weak perpendicular magnetic fields. A jump in the phase stiffness at the BKT transition is detected up to 5 G, while the BKT features are smeared between 5 G and 50 G, disappearing altogether at 100 G, where conventional current-voltage behaviour is observed. Our findings demonstrate that weak magnetic fields, insignificant in bulk systems, deeply affect our ultra-thin system, promoting a crossover from Halperin-Nelson fluctuations to a BCS-like state with Ginzburg-Landau fluctuations, as the field increases. This behavior is related to field-induced free vortices that screen the vortex-antivortex interaction and smear the BKT transition.

cond-mat.supr-con↗

arXiv2022

Complex phase-fluctuation effects correlated with granularity in superconducting NbN nanofilms

Superconducting nanofilms are tunable systems that can host a 3D-2D dimensional crossover, leading to the Berezinskii-Kosterlitz-Thouless (BKT) superconducting transition approaching the 2D regime. Reducing further the dimensionality, from 2D to quasi-1D, superconducting nanostructures with disorder can generate quantum and thermal phase slips (PS) of the order parameter. Both BKT and PS are complex phase fluctuation phenomena of difficult experimental detection. Here, we have characterized superconducting NbN nanofilms thinner than 15 nm, on different substrates, by temperature dependent resistivity and current-voltage (I-V) characteristics. Our measurements have evidenced clear features related to the emergence of BKT transition and PS events. The contemporary observation in the same system of BKT transition and PS events and their tunable evolution in temperature and thickness, has been explained as due to the nano-conducting paths forming in a granular NbN system. In one of the investigated samples we have been able to trace and characterize the continuous evolution in temperature from quantum to thermal PS. Our analysis has established that the detected complex phase phenomena are strongly related to the interplay between the typical size of the nano-conductive paths and the superconducting coherence length.

cond-mat.supr-con↗

arXiv2018

Binary Multifunctional Ultrabroadband Self-Powered g-C3N4 /Si Heterojunction High-Speed Photodetector

Compact optical detectors with fast binary photoswitching over a broad range of wavelength are essential as an interconnect for any light-based parallel, real-time computing. Despite of the tremendous technological advancements yet there is no such single device available that meets the specifications. Here we report a multifunctional self-powered high-speed ultrabroadband (250-1650 nm) photodetector based on g-C3N4/Si hybrid 2D/3D structure. The device shows a novel binary photoswitching (change in current from positive to negative) in response to OFF/ON light illumination at small forward bias (<0.1 V) covering 250-1350 nm. At zero bias, the device displays an extremely high ON/OFF ratio of 1.2 x 10^5 under 680 nm (49 microWcm-2) illumination. The device also shows an ultrasensitive behaviour over the entire operating range at low light illuminations, with highest responsivity (1.2 AW-1), detectivity (2.8 x 10^14 Jones) and external quantum efficiency (213%) at 680 nm. The response and recovery speeds are typically 0.23 and 0.60 ms, respectively, under 288 Hz light switching frequency. Dramatically improved performance of our device is attributed to the heterojunctions formed by the ultrathin g-C3N4 nanosheets embedded in the Si surface.

physics.app-ph↗

arXiv2016

Ultrasensitive Self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ~ 5.3% photosensivity at 350 nm illumination (18 microWatt/cm^2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45x10^10 Jones (cm Hz^(1/2) W^(-1)), respectively at zero bias under 350 nm illumination (18 microWatt/cm^2) with fast response (60 ms), recovery time (267 ms) and excellent repeatability. Power density-dependent responsivity & detectivity revealed ultrasensitive behaviour under low light conditions. The source of observed self-powered effect in hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.

cond-mat.mtrl-sci↗