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Suvidyakumar Homkar

Publications and source records attributed to Suvidyakumar Homkar.

4 recordsLinked to original sources

Unveiling Unconventional Ferroelectric Switching in Multiferroic Ga0.6 Fe1.4O3 Thin Films Through Multiscale Electron Microscopy Investigations

Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for ferroelectricity in most of the usual displacive ferroelectric materials is too energy-demanding for some newly diagnosed ferroelectric materials such as the Ga2-xFexO3 (0.8 < x < 1.4) compounds. Some alternative theoretical propositions have been made and need experimental confirmation. A dual-scale electron microscopy study is performed on thin films of the Ga0.6Fe1.4O3 multiferroic compound. A wide scale precession-assisted electron diffraction tomography study first allows the determination of the structure the compound adopts in thin films, and even permits the refinement of the atomic positions within this structure. Cationic mobility is suggested for two of the atomic positions through the existence of extra electronic density. A local in situ high resolution scanning transmission electron microscopy study then allows confirming these mobilities by directly spotting the cationic displacements on successively acquired images. The whole study confirms an unconventional switching mechanism via local domain wall motion in this compound.

cond-mat.mtrl-sci

Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$

In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, since it can exhibit multiferroicity and presents a spin Hall magnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Pt bilayer. Here, we explore GFO utilizing thermo-spin measurements in an on-chip approach. By carefully considering the geometry of our thermo-spin devices we are able to quantify the spin Seebeck effect and the spin current generation in a GFO/Pt bilayer, obtaining a value comparable to that of YIG/Pt. This further confirms the promises of an efficient spin current generation with the possibility of an electric-field manipulation of the magnetic properties of the system in an insulating ferrimagnetic material.

cond-mat.mtrl-sci

Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers

The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response to this issue, by granting the manipulation of the FM magnetization by the NM spin Hall effect (SHE) generated spin current. Additional functionalities, such as the electric field control of the spin current generation, can be offered using multifunctional ferromagnets. We have studied the spin current transfer processes between Pt and the multifunctional magnetoelectric Ga0.6Fe1.4O3 (GFO). In particular, via angular dependent magnetotransport measurements, we were able to differentiate between magnetic proximity effect (MPE)-induced anisotropic magnetoresistance (AMR) and spin Hall magnetoresistance (SMR). Our analysis shows that SMR is the dominant phenomenon at all temperatures and is the only one to be considered near room temperature, with a magnitude comparable to those observed in Pd/YIG or Pt/YIG heterostructures. These results indicate that magnetoelectric GFO thin films show promises for achieving an electric-field control of the spin current generation in NM/FM oxide-based heterostructures.

cond-mat.mtrl-sci

Non-van der Waals honeycomb antiferromagnet SrRu$_2$O$_6$ down to a few layers

The current family of experimentally realized two-dimensional magnetic materials consist of 3$d$ transition metals with very weak spin-orbit coupling. In contrast, we report a new platform in a chemically bonded and layered 4$d$ oxide, with strong electron correlations and competing spin-orbit coupling. We synthesize ultra-thin sheets of SrRu$_2$O$_6$ using scalable liquid exfoliation. These exfoliated sheets are characterized by complementary experimental and theoretical techniques. The thickness of the nano-sheets varies between three to five monolayers, and within the first-principles calculations, we show that antiferromagnetism survives in these ultra-thin layers. Experimental data suggest that exfoliation occurs from the planes perpendicular to the $c$-axis as the intervening hexagonal Sr-lattice separates the two-dimensional magnetic honeycomb Ru-layers. The high-resolution transmission electron microscope images indicate that the average inter-atomic spacing between the Ru-layers is slightly reduced, which agrees with the present calculations. The signatures of rotational stacking of the nanosheets are also observed. Such new two-dimensional platform offers enormous possibilities to explore emergent properties that appear due to the interplay between magnetism, strong correlations and spin-orbit coupling. Moreover, these effects can be further tuned as a function of layer thickness.

cond-mat.str-el