arXiv subjects

Sven Borghardt

Publications and source records attributed to Sven Borghardt.

4 recordsLinked to original sources

arXiv2020

Interplay of Excitonic Complexes in $p$-Doped WSe$_2$ Monolayers

WSe$_2$ monolayers with variable doping are an ideal system to study two-dimensional excitonic complexes. Here, we find that the strongest photoluminescence from bright neutral excitons occurs at moderate $p$-doping levels, owing to a rapid decrease of signal from positive dark trions and a slow increase of signal from positive bright trions with growing $p$-concentrations. We explain our observations with a qualitative model, in which the scattering rate of bright excitons into dark complexes is enhanced by exciton localization, while the scattering rate into positive bright trions increases with $p$-doping level.

cond-mat.mes-hall↗

arXiv2020

Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe$_2$

The rich optical properties of transition metal dichalcogenide monolayers (TMD-MLs) render these materials promising candidates for the design of new optoelectronic devices. Despite the large number of excitonic complexes in TMD-MLs, the main focus has been put on optically bright neutral excitons. Spin-forbidden dark excitonic complexes have been addressed for basic science purposes, but not for applications. We report on spin-forbidden dark excitonic complexes in ML WSe$_2$ as an ideal system for the facile generation of radially polarized light beams. Furthermore, the spatially resolved polarization of photoluminescence beams can be exploited for basic research on excitons in two-dimensional materials.

physics.optics↗

arXiv2017

Engineering of Neutral Excitons and Exciton Complexes in Transition Metal Dichalcogenide Monolayers through External Dielectric Screening

In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materials. For the realization of this non-invasive approach, an in-depth understanding of such dielectric effects is required. We report on the modulations of excitonic transitions in TMD-MLs through the effect of dielectric environments including low-k and high-k dielectric materials. We present absolute tuning ranges as large as 37 meV for the optical band gaps of WSe 2 and MoSe 2 MLs and relative tuning ranges on the order of 30% for the binding energies of neutral excitons in WSe 2 MLs. The findings suggest the possibility to reduce the electronic band gap of WSe 2 MLs by 120 meV, paving the way towards dielectrically defined lateral heterojunctions.

cond-mat.mes-hall↗

arXiv2016

The Effect of Intra-Layer Bonding on Electron-Optical Phase Images of Few-Layer WSe2

The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2 . We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely know thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms and material interfaces.

cond-mat.mtrl-sci↗