arXiv subjects

Sverre M. Selbach

Publications and source records attributed to Sverre M. Selbach.

At least 19 recordsLinked to original sources

arXiv2026

Electronic Structure and Resonant Circular Dichroism of La$_{0.7}$Sr$_{0.3}$MnO$_3$ from Soft X-ray Angle-Resolved Photoemission

Coupling between spin, orbital, charge, and lattice degrees of freedom in transition-metal oxides produces a variety of electronic and magnetic phenomena of importance for future technologies. Here, we explore the electronic band structure of a (111)-oriented La0.7Sr0.3MnO3 thin film through soft X-ray angle-resolved photoemission spectroscopy (ARPES). The measurements agree with the electronic band structure calculated with density functional theory using Hubbard U correction. Furthermore, we probe the circular dichroism in ARPES, and observe a pronounced momentum- resolved magnetic circular dichroism in resonant photoemission from the Mn L-edge. The approach combines the momentum- and spin-selectivity of ARPES and X-ray magnetic circular dichroism, respectively, which could provide a useful approach for the study of unconventional magnetism.

cond-mat.str-el↗

arXiv2025

Twin-boundary-induced nonrelativistic spin splitting

Nonrelativistic spin splitting (NRSS) in compensated magnetic materials is drawing considerable attention due to its potential impact in next-generation spintronic devices. While NRSS is typically restricted to materials with particular symmetry constraints, here we demonstrate, using density functional theory (DFT) and tight-binding transport calculations, that twin boundaries can induce NRSS in magnetic systems where it is otherwise forbidden. We focus on two representative material systems: the tetragonal perovskite oxide BiCoO$_3$ with $90^{\circ}$ ferroelastic domain walls, and the rhombohedral layered delafossite-type oxide CoO$_2$, supporting $71^{\circ}$, $109^{\circ}$, and $135^{\circ}$ twin boundaries. Our results reveal that, if these boundaries coexist with ferromagnetic domain walls, they consistently produce NRSS similar to that of d-wave altermagnets, with nodal surfaces dictated by the underlying symmetry of the supercell containing the twin boundary. Tight-binding models further elucidate how the NRSS and derived transport properties scale with domain size and density. Our results put forward twin boundary engineering as a versatile route to realize and control spin splitting in a broader class of materials.

cond-mat.mtrl-sci↗

arXiv2025

Local indirect magnetoelectric coupling at twin walls in CaMnO$_3$

Ferroelastic twin walls in centrosymmetric perovskites can host emergent polar and magnetic properties forbidden in the bulk. We use density functional theory calculations to study the geometry and magnetic properties of ferroelastic domain walls in orthorhombic CaMnO$_3$, which belongs to the most common perovskite space group, $Pnma$. At the wall, the inherent inversion symmetry-breaking induces local polar distortions dependent on the wall geometry, which couple to the magnetic order through the octahedral distortions. Noncollinear calculations reveal enhanced out-of-plane magnetic moments on the Mn atoms and a local, finite magnetization confined to the wall. Strain fields across twin walls thus give rise to coexistence of polarization and magnetization as well as magnetoelectric response that is absent and symmetry-forbidden in bulk CaMnO$_3$. We propose that magnetoelectric coupling and coexisting polarization and magnetization can emerge at twin walls in bulk centrosymmetric antiferromagnets.

cond-mat.mtrl-sci↗

arXiv2025

Domain Walls and Defects in Ferroelectric Inorganic Halide Perovskites CsGeX$_3$ (X = Cl, Br, I)

Among all-inorganic halide perovskites, the only known ferroelectrics are the family of CsGeX$_3$ (X = Cl, Br, I). Here, we study their ferroelectric domain walls (DWs) and common point defects by density functional theory (DFT) calculations and investigate the interplay between DWs and defects. The most stable defects are V$_{\text{X}}$ and V$_{\text{Cs}}$ and the former shows low migration barriers and high mobility. In contrast to oxide ferroelectrics, the affinity between point defects and DWs is negligible, reflecting the subtle structural distortions at CsGeX$_3$ DWs. Concomitantly, the formation energies and migration energy barriers of CsGeX$_3$ DWs are small compared to oxides, and neither V$_{\text{X}}$ nor V$_{\text{Cs}}$ pin migrating DWs. The band gap invariance across DWs and the lack of affinity towards intrinsic charged point defects imply that conducting DWs for nanoelectronics may be challenging to realise in CsGeX$_3$. However, shallow $p$-type defect levels and low hole effective masses suggest that high $p$-type conductivity may be achievable in nominally ferroelectric CsGeX$_3$. The low DW migration energy barriers and insignificant DW pinning by point defects make CsGeX$_3$ promising materials as robust soft ferroelectrics for high-frequency switching applications with low energy dissipation.

cond-mat.mtrl-sci↗

arXiv2025

Finite-Temperature Ferroelectric Phase Transitions from Machine-Learned Force Fields

Simulating finite temperature phase transitions from first-principles is computationally challenging. Recently, molecular dynamics (MD) simulations using machine-learned force fields (MLFFs) have opened a new avenue for finite-temperature calculations with near-first-principles accuracy. Here we use MLFFs, generated using on-the-fly training, to investigate structural phase transitions in four of the most well-studied ferroelectric oxides; BaTiO$_3$, PbTiO$_3$, LiNbO$_3$ and BiFeO$_3$. Only using the 0 K ground state structure as input for the training, the resulting MLFFs can qualitatively predict all the main structural phases and phase transitions, while the quantitative results are sensitive to the choice of exchange correlation functional with PBEsol found to be more robust than LDA and r$^2$SCAN. MD simulations also reproduce the experimentally observed order-disorder character of Ti displacements in BaTiO$_3$, the abrupt first order transitions of BiFeO$_3$ and PbTiO$_3$, and the mixed order-disorder and displacive character of the ferroelectric transition in LiNbO$_3$. Finally, we discuss the potential and limitations of using MLFFs for simulating ferroelectric phase transitions.

cond-mat.mtrl-sci↗

arXiv2025

Anisotropic-Strain Control of The Magnetic Structure in Mn\textsubscript{3}GaN

A first principles study is conducted to explore the changes in the magnetic structure of Mn\textsubscript{3}GaN under anisotropic biaxial strain. Mn\textsubscript{3}GaN is an antiperovskite with a structure similar to that of an ideal cubic perovskite. Several manganese nitride antiperovskites including Mn\textsubscript{3}GaN were reported to have a frustrated noncollinear antiferromagnetic structure. Successful electric switching of its magnetic structure has been reported. Furthermore, despite a cubic lattice symmetry, the magnetic symmetry is rhombohedral, allowing a piezomagnetic response. Tensile biaxial strain has been shown to produce a net magnetic moment by inducing in-plane spin canting. Compressive biaxial strain has been used to induce a spin-polarized ferro- or ferrimagnetic phase. In this study, anisotropic strain in the (001) plane is applied, outlining a magnetic phase diagram that can predict the properties when growing Mn\textsubscript{3}GaN thin films on noncubic substrates. The lattice vectors along the a and b crystallographic axes are strained by -5\% to 5\% in percentwise increments in all permutations. An extensive phase diagram is mapped, revealing multiple combinations of strain applied to the two lattice vectors that result in a ferro- or ferrimagnetic transition. Unlike previous results, not only strictly compressive strain on both lattice vectors, but combinations of tensile and compressive strain, as well as uniaxial strain, are seen producing the magnetic phase transitions. Furthermore, while biquadratic strain was seen producing a net moment in the [110] direction under tensile strain and [\bar{1}\bar{1}0] under compressive strain, anisotropic strain allows tuning the direction of the net magnetization.

cond-mat.mtrl-sci↗

arXiv2025

Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides

Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large electromechanical responses. Here, we demonstrate noncollinearity in dipolar order as an additional degree of freedom, unlocking physical properties that are symmetry-forbidden in classical antiferroelectrics. We show that noncollinear order of electric dipole moments in K$_3$[Nb$_3$O$_6$|(BO$_3$)$_2$] leads to a coexistence of antiferroelectric and ferroelectric behaviors. Besides the double-hysteresis loop observed in antiferroelectrics, a pronounced piezoresponse and electrically switchable domains are observed, separated by atomically sharp and micrometer-long charged domain walls. Hybrid antiferroelectric-ferroelectric responses are expected in a wide range of noncollinear systems, giving a new dimension to the research on antiferroelectrics and multifunctional oxides in general.

cond-mat.mtrl-sci↗

arXiv2025

Shear Strain-Induced Multiferroic Response in the Altermagnetic Semiconductor CuFeS$_2$

CuFeS$_2$ is an altermagnetic semiconductor that is lattice-matched with silicon and has a high Néel temperature. It is nonpolar and magnetically compensated in its structural ground state. However, the crystal belongs to a magnetic symmetry class allowing simultaneous piezoelectricity and -magnetism, indicating that distortion by shear strain may enable functional properties not observed in its tetragonal ground state. This first-principles study explores how biaxial and shear strain affect the crystal structure and functional properties. Biaxial strain lowers crystal symmetry when applied to two of the three crystallographic {001} planes considered, enhancing the altermagnetic lifting of the Kramers degeneracy. Shear strain has a compressive effect on the crystal, enhancing the effects on the electronic structure seen under biaxial compressive strain. Applying it to any one of the three {001} planes induces a polar phase with an out-of-plane electric polarization, perpendicular to the strained plane. Moreover, applying shear strain to two out of the three {001} planes induces a net magnetization simultaneously with electric polarization, producing a multiferroic response.

cond-mat.mtrl-sci↗

arXiv2025

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general.

cond-mat.mtrl-sci↗

arXiv2025

Effect of Biaxial Strain on Cation Octahedral Rotations and Magnetic Structure of the Antiperovskite Mn$_{3}$GaN

Density functional theory is used to study the effect of compressive and tensile biaxial strain on Mn$_{3}$GaN. Mn$_{3}$GaN is a non-collinear antiferromagnetic antiperovskite with a similar structure to that of an ideal cubic oxide perovskite, but with cations at the octahedral sites while the anion, nitrogen, is found at the B site. The present study explores the response of Mn$_{3}$GaN to (001) strain, considering biaxial strain levels ranging from -5% to 5%. It is found that the electron structure is insensitive to tensile strain. The study supports previous results in that a spin-canted antiferromagnetic order emerges due to tensile strain, inducing net magnetization. Compressive strain collapses the non-collinear antiferromagnetic spin structure and induces a ferrimagnetic order at -2% strain. Notably, in contrast with oxide perovskites, Mn$_{3}$GaN does not respond to strain by octahedral tilt, but rather by intraband redistributions of charge between Mn $d$ states. Despite the similar structure to oxide perovskites, the bonds between the B site anion and octahedral site cations in Mn$_{3}$GaN bonds are less rigid, such that strain is instead accommodated by a change in bond length rather than a change in bond angles.

cond-mat.mtrl-sci↗

arXiv2024

Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the anion defect chemistry and semiconducting properties, which makes the system highly sensitive to the synthesis and processing conditions. Here, we study the electronic properties of YMnO3 as function of aliovalent cation doping and thermoatmospheric history, combining density functional theory calculations with thermopower and thermogravimetric measurements. We show that the charge carrier concentration and transport properties can be controlled via both aliovalent cation dopants and anion defects, enabling reversible switching between n-type and p-type conductivity. This tunability is of importance for envisaged applications of hexagonal manganites in, e.g. next-generation capacitors and domain-wall nanoelectronics, or as catalysts or electrodes in fuel cells or electrolyzers. Furthermore, our approach is transferrable to other transition metal oxides, providing general guidelines for controlling their semiconducting properties.

cond-mat.mtrl-sci↗

arXiv2023

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena.

cond-mat.mtrl-sci↗

arXiv2022

Low-energy Properties of Electrons and Holes in CuFeS$_2$

The antiferromagnetic semiconductor CuFeS$_2$ belongs to a magnetic symmetry class that is of interest for spintronics applications. In addition, its crystal lattice is compatible with Si, making it possible to integrate it with non-magnetic semiconducting structures. Therefore, we investigate this material by finding the effective $\boldsymbol{k}\cdot\boldsymbol{p}$ Hamiltonian for the electron- and hole bands. We base this description on \textit{ab initio} calculations and classify the electronic bands by their symmetry. As a result, we find that CuFeS$_2$ exhibits spin-polarized bands and an anomalous Hall effect. Finally, we suggest using cyclotron resonance to verify our proposed effective mass tensors at the conduction band minimum and valence band maximum.

cond-mat.mes-hall↗

arXiv2022

Confinement-driven inverse domain scaling in polycrystalline ErMnO3

The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the grain size increases, smaller domains are formed, which we relate to the interaction of the topological vortices with local strain fields. The inversion of the domain scaling behavior has far-reaching implications, providing fundamentally new opportunities for topology-based domain engineering and the tuning of the electromechanical and dielectric performance of ferroelectrics in general.

cond-mat.mtrl-sci↗

arXiv2018

Oxygen vacancies in bulk and at neutral domain walls in hexagonal YMnO$_3$

We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO$_3$, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO$_3$ are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are high compared to oxygen vacancies in perovskites, and to previously reported values for oxygen interstitials in h-YMnO$_3$. The calculated polarization decreases linearly with vacancy concentration, while the out-of-plane lattice parameter expands in agreement with previous experiments. In contrast with ferroelectric perovskites, oxygen vacancies are found to be more stable in bulk than at domain walls. The tendency of oxygen vacancies to segregate away from neutral domain walls is explained by unfavorable Y-O bond lengths caused by the local strain field at the domain walls.

cond-mat.mtrl-sci↗

arXiv2018

Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO$_3$, InMnO$_3$ and YGaO$_3$ by first principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width, reflecting that polarization is not the driving force for domain formation. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization. We introduce general rules for how to engineer $n$- and $p$-type domain wall conductivity based on the domain size, polarization and electronic band gap. This opens the possibility of fine-tuning the local transport properties and design $p$-$n$-junctions for domain wall-based nano-circuitry.

cond-mat.mtrl-sci↗

arXiv2018

Octahedral coupling in (111)- and (001)-oriented La$_{2/3}$Sr$_{1/3}$MnO$_3$/SrTiO$_3$ heterostructures

Rotations and distortions of oxygen octahedra in perovskites play a key role in determining their functional properties. Here we investigate how octahedral rotations can couple from one material to another in La$_{2/3}$Sr$_{1/3}$MnO$_3$/SrTiO$_3$ epitaxial heterostructures by first principles density functional theory (DFT) calculations, emphasizing the important differences between systems oriented perpendicular to the (111)- and (001)-facets. We find that the coupling length of out-of-phase octahedral rotations is independent of the crystalline facet, pointing towards a steric effect. However, the detailed octahedral structure across the interface is significantly different between the (111)- and (001)-orientations. For (001)-oriented interfaces, there is a clear difference whether the rotation axis in SrTiO$_3$ is parallel or perpendicular to the interface plane, while for the (111)-interface the different rotations axes in SrTiO$_3$ are symmetry equivalent. Finally, we show that octahedral coupling across the interface can be used to control the spatial distribution of the spin density.

cond-mat.mtrl-sci↗

arXiv2018

Unconventional order-disorder phase transition in improper ferroelectric hexagonal manganites

The improper ferroelectricity in YMnO$_3$ and other related multiferroic hexagonal manganites are known to cause topologically protected ferroelectric domains that give rise to rich and diverse physical phenomena. The local structure and structural coherence across the ferroelectric transition, however, were previously not well understood. Here we reveal the evolution of the local structure with temperature in YMnO$_3$ using neutron total scattering techniques, and interpret them with the help of first-principles calculations. The results show that, at room temperature, the local and average structures are consistent with the established ferroelectric $P6_3cm$ symmetry. On heating, both local and average structural analyses show striking anomalies from $\sim 800$ K up to the Curie temperature consistent with increasing fluctuations of the order parameter angle. These fluctuations result in an unusual local symmetry lowering into a \textit{continuum of structures} on heating. This local symmetry breaking persists into the high-symmetry non-polar phase, constituting an unconventional type of order-disorder transition.

cond-mat.mtrl-sci↗