arXiv subjects

Sylvain Latil

Publications and source records attributed to Sylvain Latil.

10 recordsLinked to original sources

arXiv2026

Excitons in Large Disordered Boron-Nitride Layer using Linear-Scaling Bethe-Salpeter Simulations

We introduce a real-space, linear-scaling Bethe-Salpeter framework that enables excitonic spectroscopy in large and possibly disordered boron-nitride-derived systems. Thanks to the use of a sublattice-resolved perturbative decoupling that maps localized electron-hole pairs onto a sparse tight-binding model, we implement the Kernel Polynomial Method to compute absorption spectra with O(N) cost. To illustrate the capabilities of our method, we apply it to Anderson-disordered monolayer hexagonal boron nitride with up to $10^{5}$ orbitals. The method reveals a disorder-induced asymmetric broadening of bright excitons, a crossover from quadratic to linear redshift of the main absorption peak, and Anderson localization of the exciton center of mass. This approach extends excitonic calculations beyond the reach of conventional ab initio Green's function methods (GW approximation and Bethe-Salpeter equation), opening optical spectroscopy to large-scale, disordered, moiré, quasicrystalline, and structurally complex quantum materials.

cond-mat.mtrl-sci↗

arXiv2026

First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures

We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into three families depending on the width of the graphene part. Here, by employing ab initio methods (standard and time-dependent density functional theory and GW), we demonstrate that such classification still holds for other electronic states close to the gap. We show that they display trends substantially different from those known for the gapwidth and originate family-specific features in the screening properties and optical absorption spectra (peak energy and intensity). In addition, our use of a tight binding model originally introduced for isolated nanoribbons allows us to discuss some crucial heterostructure's properties in view of those of its isolated building blocks, including charge redistribution at the edges, gap hierarchy inversion, and specific optical selection rules. By bridging the electronic structure to optical absorption spectra in a comprehensive set of systems, this study sets the stage for more refined investigations on the absorption properties of graphene/boron nitride lateral heterostructures.

cond-mat.mtrl-sci↗

arXiv2024

Gap engineering and wave function symmetry in C and BN armchair nanoribbons

Many are the ways of engineering the band gap of nanoribbons including application of stress, electric field and functionalization of the edges. In this article, we investigate separately the effects of these methods on armchair graphene and boron nitride nanoribbons. By means of density functional theory calculations, we show that, despite their similar structure, the two materials respond in opposite ways to these stimuli. By treating them as perturbations of a heteroatomic ladder model based on the tight-binding formalism, we connect the two behaviours to the different symmetries of the top valence and bottom conduction wave functions. These results indicate that opposite and complementary strategies are preferable to engineer the gapwidth of armchair graphene and boron nitride nanoribbons.

cond-mat.mes-hall↗

arXiv2024

Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers

We investigate the electronic structure and the optical absorption onset of close-to-30\degree twisted hexagonal boron nitride bilayers. Our study is carried out with a purposely developed tight-binding model validated against DFT simulations. We demonstrate that approaching 30\degree (quasicrystal limit), all bilayers sharing the same moiré supercell develop identical band structures, irrespective of their stacking sequence. This band structure features a bundle of flat bands laying slightly above the bottom conduction state which is responsible for an intense peak at the onset of the absorption spectrum. These results suggest the presence of strong, stable and stacking-independent excitons in boron nitride 30\degree-twisted bilayers. By carefully analyzing the electronic structure and its spatial distribution, we elucidate the origin of these states as moiré-induced K-valley scattering due to interlayer B$-$B coupling. We take advantage of the the physical transparency of the tight-binding parameters to derive a simple triangular model based on the B sublattice that accurately describes the emergence of the bundle. Being our conclusions very general, we predict that a similar bundle should emerge in other close-to-30{\degree} bilayers, like transition metal dichalcogenides, shedding new light on the unique potential of 2D materials.

cond-mat.mtrl-sci↗

arXiv2022

Structural classification of boron nitride twisted bilayers and ab initio investigation of their stacking-dependent electronic structure

Since the discovery of superconductive twisted bilayer graphene which initiated the field of twistronics, moiré systems have not ceased to exhibit fascinating properties. We demonstrate that in boron nitride twisted bilayers, for a given moiré periodicity, there are five different stackings which preserve the monolayer hexagonal symmetry (i.e. the invariance upon rotations of 120$^\circ$) and not only two as always discussed in literature. We introduce some definitions and a nomenclature that identify unambiguously the twist angle and the stacking sequence of any hexagonal bilayer with order-3 rotation symmetry. Moreover, we employ density functional theory to study the evolution of the band structure as a function of the twist angle for each of the five stacking sequences of boron nitride bilayers. We show that the gap is indirect at any angle and in any stacking, and identify features that are conserved within the same stacking sequence irrespective of the angle of twist.

cond-mat.mtrl-sci↗

arXiv2018

Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration and electronic correlation

We compute and discuss the electronic band structure and excitonic dispersion of hexagonal boron nitride (hBN) in the single layer configuration and in three bulk polymorphs (usual AA' stacking, Bernal AB, and rhombohedral ABC). We focus on the changes in the electronic band structure and the exciton dispersion induced by the atomic configuration and the electron-hole interaction. Calculations are carried out on the level of \textit{ab initio} many-body perturbation theory (GW and Bethe Salpeter equation) and by means of an appropriate tight-binding model. We confirm the change from direct to indirect electronic gap when going from single layer to bulk systems and we give a detailed account of its origin by comparing the effect of different stacking sequences. We emphasize that the inclusion of the electron-hole interaction is crucial for the correct description of the momentum-dependent dispersion of the excitations. It flattens the exciton dispersion with respect to the one obtained from the dispersion of excitations in the independent-particle picture. In the AB stacking this effect is particularly important as the lowest-lying exciton is predicted to be direct despite the indirect electronic band gap.

cond-mat.mtrl-sci↗

arXiv2018

Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride

We calculate the two-photon absorption in bulk and single layer hexagonal boron nitride (hBN) both by an ab-initio real-time Bethe-Salpeter approach and by a the real-space solution of the excitonic problem in tight-binding formalism. The two-photon absorption obeys different selection rules from those governing linear optics and therefore provides complementary information on the electronic excitations of hBN. Combining the results from the simulations with a symmetry analysis we show that two-photon absorption is able to probe the lowest energy $1s$ states in the single layer hBN and the lowest dark degenerate dark states of bulk hBN. This deviation from the "usual" selection rules based on the continuous hydrogenic model is explained within a simple model that accounts for the crystalline symmetry. The same model can be applied to other two-dimensional materials with the same point-group symmetry, such as the transition metal chalcogenides. We also discuss the selection rules related to the inversion symmetry of the bulk layer stacking.

cond-mat.mtrl-sci↗

arXiv2016

Excitons in boron nitride single layer

Boron nitride single layer belongs to the family of 2D materials whose optical properties are currently receiving considerable attention. Strong excitonic effects have already been observed in the bulk and still stronger effects are predicted for single layers. We present here a detailed study of these properties by combining \textit{ab initio} calculations and a tight-binding-Wannier analysis in both real and reciprocal space. Due to the simplicity of the band structure with single valence ($π$) and conduction ($π^*$) bands the tight-binding analysis becomes quasi quantitative with only two adjustable parameters and provides tools for a detailed analysis of the exciton properties. Strong deviations from the usual hydrogenic model are evidenced. The ground state exciton is not a genuine Frenkel exciton, but a very localized "tightly-bound" one. The other ones are similar to those found in transition metal dichalcogenides and, although more localized, can be described within a Wannier-Mott scheme.

cond-mat.mtrl-sci↗

arXiv2007

Massless Fermions in multilayer graphitic systems with misoriented layers

We examine how the misorientation of a few stacked graphene layers affects the electronic structure of carbon nanosystems. We present {\it ab initio} calculations on bi- and trilayer systems to demonstrate that the massless Fermion behavior typical of single layered graphene is also found in incommensurate multilayered graphitic systems. We also investigate the consequences of this property on experimental fingerprints, such as Raman spectroscopy and scanning tunneling microscopy (STM). Our simulations reveal that STM images of turbostratic few layer graphite are sensitive to the layer arrangement. We also predict that resonant raman signal of graphitic samples are more sensitive to the orientation of the layers than to their number.

cond-mat.mtrl-sci↗

arXiv2007

Magnetically Induced Field Effect in Carbon Nanotube Devices

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.

cond-mat.mes-hall↗