arXiv subjects

Sylvain Patinet

Publications and source records attributed to Sylvain Patinet.

21 records · Page 2Linked to original sources

arXiv2014

Quantitative prediction of effective toughness at random heterogeneous interfaces

The propagation of an adhesive crack through an anisotropic heterogeneous interface is considered. Tuning the local toughness distribution function and spatial correlation is numerically shown to induce a transition between weak to strong pinning conditions. While the macroscopic effective toughness is given by the mean local toughness in case of weak pinning, a systematic toughness enhancement is observed for strong pinning (the critical point of the depinning transition). A self-consistent approximation is shown to account very accurately for this evolution, without any free parameter.

cond-mat.dis-nn↗

arXiv2009

Substitutional Al solute interaction with edge and screw dislocation in Ni: a comparison between atomistic computation and continuum elastic theory

Molecular static simulations have been performed to study the interaction between a single dislocation and a substitutional Al solute atom in a pure crystal of Ni. When the Al solute is situated at intermediate distance from the slip plane, we find that both edge and screw dislocations experiment a non-negligible binding energy. We show that for such length scale the description of the elasticity theory can be improved by taking into account the spreading of dislocation cores via the Peierls-Nabarro model.

physics.class-ph↗

arXiv2008

Depinning transition for a screw dislocation in a model solid solution

On the basis of the classical dislocation theory, the Solid Solution Hardening (SSH) is commonly ascribed to the pinning of the edge dislocations. At the atomic level, the theoretical study of the dislocation cores contrasts with such a prediction. Using the static molecular simulations with some interatomic effective potentials, we demonstrate numerically that the critical resolved shear stress associated to a screw dislocation in a random Ni(Al) single crystal has same order as the edge one. Such a result is imposed by the details of the dislocation stacking fault and the core dissociation into Shockley partials. The SSH statistical theory is employed to tentatively predict analytically the data acquired through our atomistic simulations at different Al concentration.

cond-mat.mtrl-sci↗