T G Emam | Searcharxiv

arXiv2005

Effect of axial electric field on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

We present a study of the effect of an electric field on the binding energy of a shallow hydrogenic impurity in GaAs/Ga_{1-x}Al_{x}As quantum well wires. The wire is considered to be of length L and radius R and the electric field F is applied along the z-axis, the axis of the wire.

cond-mat.str-el↗

arXiv2005

Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, $300 K$, and is also increased by about 23% over that associated with temperature of 500 K.

cond-mat.mes-hall↗