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Túlio H. L. G. Castro

Publications and source records attributed to Túlio H. L. G. Castro.

2 recordsLinked to original sources

Ultrafast Formation and Annihilation of Strongly Bound, Anisotropic Excitons

Van der Waals (vdW) layered materials with long-range magnetic order have the potential to enable novel optoelectronic and spintronic applications. Among these, CrSBr is an air-stable, direct band gap semiconductor that hosts interlayer antiferromagnetic order, a highly anisotropic electronic structure, and strongly bound excitons. In particular, excitons in CrSBr have been shown to inherit the quasi-one-dimensional nature of the material and also couple to the underlying spinorder. However, mechanisms of exciton formation, dissociation, and interaction with free carriers remain largely unexplored, despite being crucial for spintronic and optoelectronic applications. Here, we employ time- and angle-resolved photoemission spectroscopy to map the electronic structure and excited state dynamics in CrSBr. We directly resolve an exceptionally large exciton binding energy (~800 meV) and a highly anisotropic momentum space distribution of the exciton, revealing its quasi-1D real-space character. We observe an excitation-density-dependent interconversion between bound excitons and quasi-free carriers on sub- to few-picosecond timescales, indicating that many-body effects govern the excited-state dynamics and optical properties during the initial stages of relaxation. Our work highlights the strongly bound, anisotropic character of excitons in CrSBr, as well as the microscopic interactions steering relaxation pathways after photoexcitation in elevated density regimes relevant for future device applications.

cond-mat.mtrl-sci↗

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs

The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS$_2$. We observe a decrease of an order of magnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAs heterojunctions, when compared to a control sample consisting of a MoS$_2$ monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS$_2$ and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS$_2$ monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices.

cond-mat.mes-hall↗