arXiv subjects

T. -L. Lee

Publications and source records attributed to T. -L. Lee.

At least 19 recordsLinked to original sources

arXiv2026

Disentangling Strain and Ti3+ Contributions to the Anomalous Hall Effect in Epitaxial RuO2 Films

The anomalous Hall effect (AHE) reported in epitaxial RuO2/TiO2 has been attributed to a strain-stabilized magnetic state, but strain can be entangled with Ru-Ti intermixing and interfacial charge redistribution, which can produce Ti3+ and potentially localized moments. Here, we disentangle these contributions using Ti-alloyed RuO2 heterostructures in which abundant Ti3+ states are retained while epitaxial strain is independently changed. The strained and relaxed films have nearly identical Ti/Ru compositions and comparable Ti3+ fractions, yet a pronounced nonlinear AHE appears only in the coherently strained film, while the relaxed heterostructure exhibits an almost linear Hall response. Spectroscopic ellipsometry further shows that the AHE-active strained state is accompanied by a reconstruction of the itinerant electronic response, including enhanced metallicity and longer carrier relaxation times. These results show that Ti3+ formation alone is insufficient to generate the anomalous Hall state and identify epitaxial strain, through its modification of the itinerant RuO2 electronic structure, as the dominant control parameter.

cond-mat.mtrl-sci↗

arXiv2026

Electronic Structure and Superconductivity in La$_{1.55}$Sr$_{0.45}$CuO$_4$/La$_2$CuO$_4$ Artificial High-$T_c$ Superlattices Probed by Hard and Soft X-ray Spectroscopy

In La$_{1.55}$Sr$_{0.45}$CuO$_4$/La$_2$CuO$_4$ (LSCO/LCO) artificial high-$T_c$ superlattices (AHTS), grown by quantum material design, the superconducting dome can be tuned by varying the geometric ratio $L/d$, where $L$ is the LCO layer thickness and $d$ is the superlattice nanoscale period. Here, we combine hard X-ray photoelectron spectroscopy (HAXPES) and polarization-dependent soft X-ray absorption spectroscopy (XAS) to probe how the electronic structure evolves across the $L/d$-tuned superconducting dome. We observe systematic chemical-potential evolution across the series, together with enhanced spectral weight near the Fermi level, enhanced local and non-local screening signatures, and increased in-plane orbital polarization near the top of the dome. Together, these spectroscopic signatures provide insight into the emergence of Fano-Feshbach resonant superconductivity in the LSCO/LCO AHTS series.

cond-mat.supr-con↗

arXiv2026

Multimode Objective Lens for Momentum Microscopy and XPEEM: Experiments

A new type of objective lens has recently been proposed for use in X-ray photoemission electron microscopes (XPEEMs) and momentum microscopes. Adding a ring electrode concentric with the extractor allows the field in the gap between the sample and the extractor to be shaped. Forming a lens field in this gap reduces the field strength at the sample by up to an order of magnitude. This mitigates the risk of field emission, particularly for cleaved samples with sharp edges. A retarding field can redirect all slow electrons, thus eliminating the primary contribution to the space-charge interaction. Here we present the first experimental investigation of the new lens, examining its performance at photon energies ranging from the extreme ultraviolet produced by a high-harmonic generation (HHG)-based source to soft and hard X-rays at two synchrotron facilities. The gap lens in a region without electrodes enables large working distances up to 23 mm. Reduced aberrations allow for larger fields of view in both k-space and real-space imaging, with resolutions comparable to those of conventional cathode lenses. However, field strengths are an order of magnitude smaller. The zero-field mode enables the study of 3D structured objects and is therefore beneficial for small cleaved samples as well as for operando devices involving top electrodes. The repeller mode reduces space-charge effects, but results in a smaller k-field diameter. This reduction ranges from 10% at hard X-ray energies to 50% in the XUV range. The usable energy interval is also reduced by a factor of two. In time-of-flight XPEEM mode the raw data show a resolution of 250 nm, which can be improved to better than 100 nm through data processing.

cond-mat.mtrl-sci↗

arXiv2025

Orbital magnetization in the Nb-substituted Kagome metal CsV$_3$Sb$_5$

This study uses angle-resolved photoemission spectroscopy to examine the low-temperature electronic structure of Cs(V$_{0.95}$Nb$_{0.05}$)$_3$Sb$_5$, demonstrating that partially substituting V atoms with isoelectronic Nb atoms results in \blue{an increase of the band width} and enhanced gap opening at the Dirac-like crossings due to the resulting chemical pressure. This increases the magnetic circular dichroism signal in the angular distribution (MCDAD) compared to CsV$_3$Sb$_5$, enabling detailed analysis of magnetic circular dichroism in several bands near the Fermi level. These results \blue{substantiate} the predicted coupling of orbital magnetic moments to three van Hove singularities near the Fermi level at M points. Previous studies have observed that Nb doping \blue{lowers the charge density transition temperature} and increases the critical temperature for superconductivity. This article demonstrates that Nb doping concomitantly increases the magnetic circular dichroism signal attributed to orbital moments.

cond-mat.mtrl-sci↗

arXiv2024

Discovery of an Antiferromagnetic Topological Nodal-line Kondo Semimetal

The symbiosis of strong interactions, flat bands, topology and symmetry has led to the discovery of exotic phases of matter, including fractional Chern insulators, correlated moiré topological superconductors, and Dirac and Weyl semimetals. Correlated metals, such as those present in Kondo lattices, rely on the screening of local moments by a sea of non-magnetic conduction electrons. Here, we report on a unique topological Kondo lattice compound, CeCo2P2, where the Kondo effect - whose existence under the magnetic Co phase is protected by PT symmetry - coexists with antiferromagnetic order emerging from the flat bands associated with the Co atoms. Remarkably, this is the only known Kondo lattice compound where magnetic order occurs in non-heavy electrons, and puzzlingly, at a temperature significantly higher than that of the Kondo effect. Furthermore, at low temperatures, the emergence of the Kondo effect, in conjunction with a glide-mirror-z symmetry, results in a nodal line protected by bulk topology near the Fermi energy. These unusual properties, arising from the interplay between itinerant and correlated electrons from different constituent elements, lead to novel quantum phases beyond the celebrated topological Kondo insulators and Weyl Kondo semimetals. CeCo2P2 thus provides an ideal platform for investigating narrow bands, topology, magnetism, and the Kondo effect in strongly correlated electron systems.

cond-mat.str-el↗

arXiv2024

Chirality in the Kagome Metal CsV$_3$Sb$_5$

Using x-ray photoelectron diffraction (XPD) and angle-resolved photoemission spectroscopy, we study photoemission intensity changes related to changes in the geometric and electronic structure in the kagome metal CsV$_3$Sb$_5$ upon transition to an unconventional charge density wave (CDW) state. The XPD patterns reveal the presence of a chiral atomic structure in the CDW phase. Furthermore, using circularly polarized x-rays, we have found a pronounced non-trivial circular dichroism in the angular distribution of the valence band photoemission in the CDW phase, indicating a chirality of the electronic structure. This observation is consistent with the proposed orbital loop current order. In view of a negligible spontaneous Kerr signal in recent magneto-optical studies, the results suggest an antiferromagnetic coupling of the orbital magnetic moments along the $c$-axis. While the inherent structural chirality may also induce circular dichroism, the observed asymmetry values seem to be too large in the case of the weak structural distortions caused by the CDW.

cond-mat.str-el↗

arXiv2023

Surface termination control of charge transfer and band alignment across a semiconductor-crystalline oxide heterojunction

Charge redistribution across heterojunctions has long been utilized to induce functional response in materials systems. Here we examine how the composition of the terminating surface affects charge transfer across a heterojunction consisting of Si and the crystalline complex oxide SrTiO3. Itinerant electrons in Si migrate across the interface toward the surface of SrTiO3 due to surface depletion. The electron transfer in turn creates an electric field across the interface that modifies the interfacial dipole associated with bonding between SrTiO3 and Si, leading to a change in the band alignment from type-II to type-III. By capping the SrTiO3 surface with ultra-thin layers of BaO, SrO or TiO2, charge transfer across the interface can be weakened or inhibited. Ab initio modeling implicates the adsorption of oxygen as driving surface depletion in SrTiO3. The electronic coupling between the surface and buried interface expands the functionality of semiconductor-crystalline oxide heterojunctions.

cond-mat.mtrl-sci↗

arXiv2023

Donor-acceptor co-adsorption ratio controls structure and electronic properties of two-dimensional alkali-organic networks on Ag(100)

The results are presented of a detailed combined experimental and theoretical investigation of the influence of coadsorbed electron-donating alkali atoms and the prototypical electron acceptor molecule TCNQ (7,7,8,8-tetracyanoquinodimethane) on the Ag(100) surface. Several coadsorption phases were characterised by scanning tunnelling microscopy, low energy electron diffraction, and soft-X-ray photoelectron spectroscopy. Quantitative structural data were obtained using normal incidence X-ray standing wave (NIXSW) measurements and compared with the results of density functional theory (DFT) calculations using several different methods of dispersion correction. Generally good agreement between theory and experiment was achieved for the quantitative structures, albeit with prediction of the alkali atom heights being challenging for some methods. The adsorption structures depend sensitively on the interplay of molecule-metal charge transfer and long-range dispersion forces, which are controlled by the composition ratio between alkali atoms and TCNQ. The large difference in atomic size between K and Cs has negligible effects on stability, whereas increasing the ratio of K:TCNQ from 1:4 to 1:1 leads to a weakening of molecule-metal interaction strength in favour of stronger ionic bonds within the two-dimensional alkali-organic network. A strong dependence of the work function on the alkali donor-TCNQ acceptor co-adsorption ratio is predicted.

cond-mat.mtrl-sci↗

arXiv2021

Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via doping. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions.

cond-mat.mtrl-sci↗

arXiv2021

Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction

The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.

cond-mat.mtrl-sci↗

arXiv2020

Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.

cond-mat.mtrl-sci↗

arXiv2020

Probing spin correlations using angle resolved photoemission in a coupled metallic/Mott insulator system

A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of possibilities for the motion of electrons in a solid. In the magnetic oxide metal PdCrO$_{2}$, these two coexist as alternating layers. Using angle resolved photoemission, we surprisingly find sharp band-like features in the one-electron removal spectral function of the correlated subsystem. We show that these arise because a hole created in the Mott layer moves to and propagates in the metallic layer while retaining memory of the Mott layer's magnetism. This picture is quantitatively supported by a strong coupling analysis capturing the physics of PdCrO$_{2}$ in terms of a Kondo lattice Hamiltonian. Our findings open new routes to use the non-magnetic probe of photoemission to gain insights into the spin-susceptibility of correlated electron systems.

cond-mat.str-el↗

arXiv2019

Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures

Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x-ray magnetic circular dichroism results confirm recent findings that both native mono/few-layer and bulk VSe2 do not show any signature of an intrinsic ferromagnetic ordering. Nonetheless, we find that ferromagnetism can be induced, even at room temperature, after coupling with a Fe thin film layer, with antiparallel alignment of the moment on the V with respect to Fe. We further consider the chemical reactivity at the Fe/VSe2 interface and its relation with interfacial magnetic coupling.

cond-mat.mes-hall↗

arXiv2019

Electronic structure of a graphene-like artificial crystal of $NdNiO_3$

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

cond-mat.str-el↗

arXiv2018

Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface

The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within the Ge. Accordingly, the built-in potential within the Ge has been mapped in a layer-resolved fashion. Electron transfer from donors in the n-SrTiO3 to the p-Ge creates a space-charge region in the Ge resulting in downward band bending which spans most of the Ge gap. This strong downward band bending facilitates visible-light, photo-generated electron transfer from Ge to STO, favorable to drive the hydrogen evolution reaction associated with water splitting. Ti 2p and Sr 3d core-level line shapes reveal that the STO bands are flat despite the space-charge layer therein. Inclusion of the effect of Ge band bending on band alignment is significant, amounting to a ~0.4 eV reduction in valence band offset compared to the value resulting from using spectra averaged over all layers. Density functional theory allows candidate interface structural models deduced from scanning transmission electron microscopy images to be simulated and structurally optimized. These structures are used to generate multi-slice simulations that reproduce the experimental images quite well. The calculated band offsets for these structures are in good agreement with experiment.

cond-mat.mtrl-sci↗

arXiv2018

Electronic structure of the candidate 2D Dirac semimetal SrMnSb2: a combined experimental and theoretical study

SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in the form of a stable, bulk (3D) crystal. Here, we report a combined and comprehensive experimental and theoretical investigation of the electronic structure of SrMnSb$_2$, including the first ARPES data on this compound. SrMnSb$_2$ possesses a small Fermi surface originating from highly 2D, sharp and linearly dispersing bands (the Y-states) around the (0,$π$/a)-point in $k$-space. The ARPES Fermi surface agrees perfectly with that from bulk-sensitive Shubnikov de Haas data from the same crystals, proving the Y$-$states to be responsible for electrical conductivity in SrMnSb$_2$. DFT and tight binding (TB) methods are used to model the electronic states, and both show good agreement with the ARPES data. Despite the great promise of the latter, both theory approaches show the Y-states to be gapped above E$_F$, suggesting trivial topology. Subsequent analysis within both theory approaches shows the Berry phase to be zero, indicating the non-topological character of the transport in SrMnSb$_2$, a conclusion backed up by the analysis of the quantum oscillation data from our crystals.

cond-mat.str-el↗

arXiv2017

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.

cond-mat.str-el↗

arXiv2016

Tuning a Strain-Induced Orbital Selective Mott Transition in Epitaxial VO$_2$

We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray absorption spectroscopy, respectively. By using the U(1) slave spin formalism, we further argue that the observed anisotropic correlation effects can be understood by a model of orbital selective Mott transition at a filling that is non-integer, but close to the half-filling. Because the overlaps of wave functions between $d$ orbitals are modified by the strain, orbitally-dependent renormalizations of the bandwidths and the crystal fields occur with the application of strain. These renormalizations generally result in different occupation numbers in different orbitals. We find that if the system has a non-integer filling number near the half-filling such as for VO$_2$, certain orbitals could reach an occupation number closer to half-filling under the strain, resulting in a strong reduction in the quasiparticle weight $Z_α$ of that orbital. Moreover, an orbital selective Mott transition, defined as the case with $Z_α = 0$ in some, but not all orbitals, could be accessed by epitaxial strain-engineering of correlated electron systems.

cond-mat.str-el↗