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T. A. S. Pereira

Publications and source records attributed to T. A. S. Pereira.

7 recordsLinked to original sources

Chalcogen Impurity Barriers in 2D Systems via Semi-Empirical/Machine Learning Modeling: A Survey over 4000 Materials

Adequate characterization of two-dimensional materials with low energy barriers for impurity adsorption is key for advancing applications based on catalysis, sensing, and surface functionalization. However, first-principles methods, such as DFT, are often computationally extremely expensive for feasible large-scale screenings. Given such a scenario, we address a data-driven approach which integrates the semi-empirical Extended Huckel Method with machine learning techniques to estimate adsorption energy barriers in the case of three relevant chalcogen impurities, S, Se and Te. With this aim, we consider the 4036 2D materials found in the C2DB. The scheme employs the EHM to compute energy profiles along three in-plane migration paths, from which average barriers can be derived. The equilibrium distance between the impurity and the 2D surface is not calculated from a tie-consuming geometry optimization. Instead, it is estimated from a simple effective phenomenological expression. Physicochemical descriptors are then obtained from the Matminer library for curated features. Four different ML models are tested, with the XGBoost leading to the highest performance. We further use SHAP to verify the resulting predictions, focusing on the $\sim1,500$ materials displaying the lowest barrier values. As it could be anticipated, we establish that the average valence electron count, electronegativity, and atomic number are typically the most relevant attributes to validate the ML model. But we also are able to determine, for the different chalcogen atoms, which other few descriptors likewise considerably influence the adsorption properties. Our results show that when combined with interpretable ML protocols, EHM can produce a scalable framework for choosing 2D structures that exhibit the desired capture/release dynamics pertinent in a variety of utilization.

cond-mat.mtrl-sci↗

Electronic properties of multilayered Lieb, transition, and Kagome lattices

Based on the interconvertibility feature shared between monolayer Lieb and Kagome lattices, which allows mapping transition lattice's stages between these two limits ($π/2 \leqθ\leq 2π/3$), in this work we extend the recently proposed one-control ($θ$) parameter tight-binding model for the case of a multilayer Lieb-Kagome system, by considering the two most-common stacks: AA and AB (Bernal). We systematically study the band transformations between the two lattices by adjusting the interlayer hopping and distance, with or without considering the influence of the nearest interlayer neighbors, for different numbers of stacked layers, and under the application of an external perpendicular electric field. The energetic changes are understood from the perspective of the layer dependence of the pseudospin components and the total probability density distributions. The present framework provides an appropriate and straightforward theoretical approach to continuously investigate the evolution of electronic properties in the multilayer Lieb-Kagome system under various external effects.

cond-mat.mes-hall↗

Wave packet scattering in porous planar semiconductor channel

In this work, we investigate the dynamics of the wave packet traveling through a porous semiconductor channel, with the defects being simulated by a disordered scattering region produced by obstruction potentials. The theoretical framework is based on the $split-operator$ technique to solve the time-dependent Schr$ö$dinger equation within the effective mass approximation. In our simulation, we consider the semiconductor channel made by InGaAs with a width of 100 angstrom, growth on an InAlAs substrate, and the porous ones with circular symmetry and different densities. The results for the current probability density and reflection, and transmission coefficients are analyzed for different initial values of the kinetic energy of the Gaussian wave packet, disordered pore densities, and pore randomness.

cond-mat.mes-hall↗

Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder

Ab initio density functional theory (DFT) and DFT plus coherent potential approximation (DFT+CPA) are employed to reveal, respectively, the effect of in-plane strain and site-diagonal disorder on the electronic structure of cubic boron arsenide (BAs). It is demonstrated that tensile strain and static diagonal disorder both reduce the semiconducting one-particle band gap of BAs, and a V-shaped p-band electronic state emerges -- enabling advanced valleytronics based on strained and disordered semiconducting bulk crystals. At biaxial tensile strains close to 15% the valence band lineshape relevant for optoelectronics is shown to coincide with one reported for GaAs at low energies. The role played by static disorder on the As sites is to promote p-type conductivity in the unstrained BAs bulk crystal, consistent with experimental observations. These findings illuminate the intricate and interdependent changes in crystal structure and lattice disorder on the electronic degrees of freedom of semiconductors and semimetals.

cond-mat.mtrl-sci↗

Giant optical nonlinearity cancellation in quantum wells

Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.

physics.optics↗

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron-impurity binding energy in GaN/HfO$_2$ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron-impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO$_2$ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.

cond-mat.mes-hall↗

Interfacial confinement in core-shell nanowires due to high dielectric mismatch

We theoretically investigate the role of the dielectric mismatch between materials on the energy levels and recombination energies of a core-shell nanowire. Our results demonstrate that when the dielectric constant of the core material is lower than that of the shell material, the self-image potential pushes the charge carriers towards the core-shell interface, in such a way that the ideal confinement model is no longer suitable. The effects of this interfacial confinement on the electronic properties of such wires, as well as on its response to applied magnetic fields, are discussed.

cond-mat.mes-hall↗