arXiv subjects

T. Banerjee

Publications and source records attributed to T. Banerjee.

27 records · Page 2Linked to original sources

arXiv2013

Bias dependent features in spin transport as a probe of the conduction band minima in Si

Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic microscope (BEMM). This arises due to local differences in the strain and the presence of misfit dislocations at the Schottky interface that enhances spin flip scattering and broadens the energy and angular distribution of the transmitted electrons. Cumulatively, these enable the transmitted hot electrons to probe the different conduction band minima in Si, giving rise to such bias dependent features in the magnetocurrent. This study reveals new insights into the spin dependence of transmission in an indirect band gap semiconductor as Si and highlights the unique capabilities of BEMM in probing local differences in spin transport across such textured interfaces.

cond-mat.mes-hall↗

arXiv2013

Hot electron attenuation of direct and scattered carriers across an epitaxial Schottky interface

Hot electron transport of direct and scattered carriers across an epitaxial NiSi_2/n-Si(111) interface, for different NiSi_2 thickness, is studied using Ballistic Electron Emission Microscopy (BEEM). We find the BEEM transmission for the scattered hot electrons in NiSi_2 to be significantly lower than that for the direct hot electrons, for all thicknesses. Interestingly, the attenuation length of the scattered hot electrons is found to be twice larger than that of the direct hot electrons. The lower BEEM transmission for the scattered hot electrons is due to inelastic scattering of the injected hot holes while the larger attenuation length of the scattered hot electrons is a consequence of the differences in the energy distribution of the injected and scattered hot electrons and the increasing attenuation length, at lower energies, of the direct hot electrons in NiSi_2.

cond-mat.mtrl-sci↗

arXiv2013

Comparison of hot-electron transmission in ferromagnetic Ni on epitaxial and polycrystalline Schottky interfaces

The hot-electron attenuation length in Ni is measured as a function of energy across two different Schottky interfaces viz. a polycrystalline Si(111)/Au and an epitaxial Si(111)/NiSi_2 interface using ballistic electron emission microscopy (BEEM). For similarly prepared Si(111) substrates and identical Ni thickness, the BEEM transmission is found to be lower for the polycrystalline interface than for the epitaxial interface. However, in both cases, the hot-electron attenuation length in Ni is found to be the same. This is elucidated by the temperature-independent inelastic scattering, transmission probabilities across the Schottky interface, and scattering at dissimilar interfaces.

cond-mat.mes-hall↗

arXiv2013

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the technique of Ballistic Electron Emission Microscopy (BEEM), which can probe lateral inhomogeneities in transport at the nanometer scale. From current-voltage measurements, we find that the Schottky Barrier height (SBH) at the LSMO/Nb:STO interface decreases at low temperatures accompanied by a larger than unity ideality factor. This is ascribed to the tunneling dominated transport caused by the narrowing of the depletion width at the interface. However, BEEM studies of such unbiased interfaces, do not exhibit SBH lowering at low temperatures, implying that this is triggered by the modification of the interface due to an applied bias and is not an intrinsic property of the interface. Interestingly, the SBH at the nanoscale, as extracted from BEEM studies, at different locations in the device is found to be spatially homogeneous and similar both at room temperature and at low temperatures. Our results highlight the application of BEEM in characterizing electron transport and their homogeneity at such unbiased complex oxide interfaces and yields new insights into the origin of the temperature dependence of the SBH at biased interfaces.

cond-mat.mes-hall↗

arXiv2013

Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

We have investigated electron transport in Nb doped SrTiO$_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO$_2$ terminated n-type SrTiO$_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.

cond-mat.mtrl-sci↗

arXiv2010

Spin injection and perpendicular spin transport in graphite nanostructures

Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the direction perpendicular to the weakly bonded graphene sheets. We achieve injection of highly (75%) spin-polarized electrons into graphite nanostructures of 300-500 nm across and up to 17 nm thick, and observe transport without any measurable loss of spin information. Direct visualization of local spin transport in graphite-based spin-valve sandwiches also shows spatially uniform and near-unity transmission for electrons at 1.8 eV above the Fermi level.

cond-mat.mes-hall↗

arXiv2001

Self Injection length in La0.7 Ca0.3 Mno3-YBa 2Cu3O7-d ferromagnet- superconductor multi layer thin films

We have carried out extensive studies on the self-injection problem in barrierless heterojunctions between La0.7Ca0.3MnO3 (LCMO) and YBa2Cu3O7-d (YBCO). The heterojunctions were grown in situ by sequentially growing LCMO and YBCO films on <100> LaAlO3 (LAO) substrate using a pulsed laser deposition (PLD) system. YBCO micro-bridges with 64 microns width were patterned both on the LAO (control) and LCMO side of the substrate. Critical current, Ic, was measured at 77K on both the control side as well as the LCMO side for different YBCO film thickness. It was observed that while the control side showed a Jc of ~2 x 10E6 A/ cm2 the LCMO side showed about half the value for the same thickness (1800 A). The difference in Jc indicates that a certain thickness of YBCO has become 'effectively' normal due to self-injection. From the measurement of Jc at two different thickness' (1800 A and 1500 A) of YBCO both on the LAO as well as the LCMO side, the value of self-injection length (at 77K) was estimated to be ~900 A self-injection length has been quantified. A control experiment carried out with LaNiO3 deposited by PLD on YBCO did not show any evidence of self-injection.

cond-mat.supr-con↗

arXiv2001

Peak effect in a superconducting DyBa2Cu3O7-y film at microwave frequencies

We report the observation of a peak in the microwave (9.55 GHz) surface resistance in an epitaxial DyBa2Cu3O7-y superconducting film in magnetic fields (parallel to the c axis) ranging between 0.2 to 0.9 Tesla. Such a peak is absent in the measurements done in zero-field. The temperature and field dependence of the peak suggests that this peak could be associated with the peak effect phenomenon reflecting the order-disorder transformation in the flux-line lattice. A strong dependence of this peak effect at frequencies close to the depinning frequency of the flux line lattice is observed.

cond-mat.supr-con↗

arXiv2000

Peak effect in laser ablated DyBa2Cu3O7-d films at microwave frequencies at subcritical currents

In this paper we report the observation of a peak in the microwave surface resistance (at frequencies ~10GHz) of laser ablated DyBa2Cu3O7-d films in magnetic field ranging from 2 to 9kOe (||c) close to the superconducting transition temperature (Tc(H)). The exact nature of peak is sample dependent but it follows a general behaviour. The peak shifts to lower temperature when the magnetic field is increased. It has strong frequency dependence and the peak is pronounced at frequencies close to the depinning frequency of the flux line lattice. From the observed temperature and field dependence we argue that this peak is associated with the order disorder transition of the flux line lattice close to Tc(H).

cond-mat.supr-con↗