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T. Chembakan

Publications and source records attributed to T. Chembakan.

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TCAD + Allpi$\text{x}^2$ Simulation study of MALTA2, a Depleted Monolithic Active Pixel Sensor for future tracking

In this work, a hybrid simulation framework combining TCAD and Allpi$\text{x}^2$ is presented to investigate the sensor properties of MALTA2, a depleted monolithic active pixel sensor designed for future tracking. The study starts from 3D modeling and transient simulations in TCAD, with generic doping profiles and simple well structures. The resulting doping profiles and electric field are extracted and fed into Allpi$\text{x}^2$ for high-statistics Monte Carlo simulations in both DUT-only and full-telescope mode. Simulations reveal a strong dependence of sensor performance, specifically the detection efficiency and cluster size, on the doping concentration of the N-type blanket at the sensor surface. The doping concentration is then optimized by comparing simulations with measurement data. The active depth of the depleted region of the MALTA2 sensor is estimated in both simulations and measurements using a grazing angle method, in which the sensor is positioned at various inclinations relative to the beam, covering angles from 0 to 60 degrees. Excellent agreement on active depth is obtained with the optimal doping concentration, showing a deviation of 2\% from the measured value at a threshold of 450\,$\text{e}^-$. Consequently, the framework offers a generic toolkit for sensor studies without requiring proprietary information.

physics.ins-det

Charge collection parameterization of MALTA2, a depleted monolithic active pixel sensor

A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations, particularly for sensors whose proprietary process details - such as doping profiles or implant geometries - are unavailable. Data was obtained with a MALTA2 sensor fabricated in a 180 nm CMOS imaging technology on 30 {\mu}m epitaxial silicon using the MALTA beam telescope at CERN SPS. The model reproduces the measured inpixel efficiency with high accuracy and enables a realistic yet computationally lightweight analog pixel simulation. This method will be further employed in optimizing the digital sensor design for applications in high-rate particle tracking and high-granularity calorimetry.

physics.ins-det