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T. E. Lamas

Publications and source records attributed to T. E. Lamas.

4 recordsLinked to original sources

Nonlinear transport and oscillating magnetoresistance in double quantum wells

We study the evolution of low-temperature magnetoresistance in double quantum wells in the region below 1 Tesla as the applied current density increases. A flip of the magneto-intersubband oscillation peaks, which occurs as a result of the current-induced inversion of the quantum component of resistivity, is observed. We also see splitting of these peaks as another manifestation of nonlinear behavior, specific for the two-subband electron systems. The experimental results are quantitatively explained by the theory based on the kinetic equation for the isotropic non-equilibrium part of electron distribution function. The inelastic scattering time is determined from the dependence of the inversion magnetic field on the current.

cond-mat.mes-hall

Interference oscillations of microwave photoresistance in double quantum wells

We observe oscillatory magnetoresistance in double quantum wells under microwave irradiation. The results are explained in terms of the influence of subband coupling on the frequency-dependent photoinduced part of the electron distribution function. As a consequence, the magnetoresistance demonstrates the interference of magneto-intersubband oscillations and conventional microwave- induced resistance oscillations.

cond-mat.mes-hall

Resonance oscillations of magnetoresistance in double quantum wells

We present experimental and theoretical studies of the magnetoresistance oscillations induced by resonance transitions of electrons between tunnel-coupled states in double quantum wells. The suppression of these oscillations with increasing temperature is irrelevant to the thermal broadening of the Fermi distribution and reflects the temperature dependence of the quantum lifetime of electrons. The gate control of the period and amplitude of the oscillations is demonstrated.

cond-mat.mes-hall

Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields

We have studied a 50/50Åsuperlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice photoluminescence, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.

cond-mat.mes-hall