arXiv subjects

T. G. Pedersen

Publications and source records attributed to T. G. Pedersen.

16 recordsLinked to original sources

arXiv2021

Recent Progress of the Computational 2D Materials Database (C2DB)

The C2DB is a highly curated open database organizing a wealth of computed properties for more than 4000 atomically thin two-dimensional (2D) materials. Here we report on new materials and properties that were added to the database since its first release in 2018. The set of new materials comprise several hundred monolayers exfoliated from experimentally known layered bulk materials, (homo)bilayers in various stacking configurations, native point defects in semiconducting monolayers, and chalcogen/halogen Janus monolayers. The new properties include exfoliation energies, Bader charges, spontaneous polarisations, Born charges, infrared polarisabilities, piezoelectric tensors, band topology invariants, exchange couplings, Raman- and second harmonic generation spectra. We also describe refinements of the employed material classification schemes, upgrades of the computational methodologies used for property evaluations, as well as significant enhancements of the data documentation and provenance. Finally, we explore the performance of Gaussian process-based regression for efficient prediction of mechanical and electronic materials properties. The combination of open access, detailed documentation, and extremely rich materials property data sets make the C2DB a unique resource that will advance the science of atomically thin materials.

cond-mat.mtrl-sci↗

arXiv2020

A library of ab initio Raman spectra for automated identification of 2D materials

Raman spectroscopy is frequently used to identify composition, structure and layer thickness of 2D materials. Here, we describe an efficient first-principles workflow for calculating resonant first-order Raman spectra of solids within third-order perturbation theory employing a localized atomic orbital basis set. The method is used to obtain the Raman spectra of 733 different monolayers selected from the computational 2D materials database (C2DB). We benchmark the computational scheme against available experimental data for 15 known monolayers. Furthermore, we propose an automatic procedure for identifying a material based on an input experimental Raman spectrum and illustrate it for the cases of MoS$_2$ (H-phase) and WTe$_2$ (T$^\prime$-phase). The Raman spectra of all materials at different excitation frequencies and polarization configurations are freely available from the C2DB. Our comprehensive and easily accessible library of \textit{ab initio} Raman spectra should be valuable for both theoreticians and experimentalists in the field of 2D materials

cond-mat.mtrl-sci↗

arXiv2019

Excitonic magneto-optics in monolayer transition metal dichalcogenides: From nanoribbons to two-dimensional response

The magneto-optical response of monolayer transition metal dichalcogenides (TMDs), including excitonic effects, is studied using a nanoribbon geometry. We compute the diagonal optical conductivity and the Hall conductivity. Comparing the excitonic optical Hall conductivity to results obtained in the independent particle approximation, we find an increase in the amplitude corresponding to one order of magnitude when excitonic effects are included. The Hall conductivities are used to calculate Faraday rotation spectra for MoS2 and WSe2. Finally, we have also calculated the diamagnetic shift of the exciton states of WSe2 in different dielectric environments. Comparing the calculated diamagnetic shift to recent experimental measurements, we find a very good agreement between the two.

cond-mat.mes-hall↗

arXiv2019

Nonlinear optical selection rules of excitons in monolayer transition metal dichalcogenides

We propose an analytical approach for calculating the linear and nonlinear optical (NLO) responses of monolayer transition metal dichalcogenides (TMDs) including excitonic effects. An effective Hamiltonian reproducing the trigonal warping (TW) of the energy dispersion, is used to derive analytical expressions for excitonic matrix elements. Based on this approach, we provide an informative diagram, which encompasses all excitonic selection rules. The diagram enables us to identify main transitions for the first-, second- and third-order optical responses. As a case study, we calculate the optical conductivity and second/third harmonic generation responses of monolayer MoS2 and demonstrate that the analytical approach accurately reproduces the spectra obtained using the Bethe-Salpeter equation (BSE). Therefore, the analytical approach provides an efficient and reliable method for calculating the NLO spectra as accurate as the full BSE method. Moreover, it enables us to obtain valuable physical insight into the fundamental transitions responsible for individual resonances, which is not straightforward in the full BSE method.

cond-mat.mes-hall↗

arXiv2019

Iterative approach to arbitrary nonlinear optical response functions of graphene

Two-dimensional materials constitute an exciting platform for nonlinear optics with large nonlinearities that are tunable by gating. Hence, gate-tunable harmonic generation and intensity-dependent refraction have been observed in e.g. graphene and transition-metal dichalcogenides, whose electronic structures are accurately modelled by the (massive) Dirac equation. We exploit on the simplicity of this model and demonstrate here that arbitrary nonlinear response functions follow from a simple iterative approach. The power of this approach is illustrated by analytical expressions for harmonic generation and intensity-dependent refraction, both computed up to ninth order in the pump field. Moreover, the results allow for arbitrary band gaps and gating potentials. As illustrative applications, we consider (i) gate-dependence of third- and fifth-harmonic generation in gapped and gapless graphene, (ii) intensity-dependent refractive index of graphene up to ninth order, and (iii) intensity-dependence of high-harmonic generation.

cond-mat.mes-hall↗

arXiv2018

Nonlinear excitonic spin Hall effect in monolayer transition metal dichalcogenides

We propose and analyze a mechanism for inducing spin Hall currents in ordinary (1H phase) monolayer transition metal dichalcogenides (TMDs) due to the nonlinear process of optical rectification. The photo-induced spin current is proportional to the light intensity, and originates from the intrinsic spin-orbit coupling in TMDs. The spin current spectrum is strongly influenced by electron-hole interactions, i.e. excitonic effects, analogous to the optical absorption. Remarkably, excitons change the temperature dependence of the induced spin current, to the point that the current direction can even be reversed by varying the temperature. This peculiar excitonic behavior is shown to emerge from the relative strength of two distinct mechanisms contributing to the optical response, i.e. a purely interband part and a mixed inter/intraband contribution. Furthermore, we investigate the valley dichrosim of second-harmonic charge and spin currents, and demonstrate different valley polarization of $s$ and $p$ excitons that stem from their distinct angular momenta. Our findings pave the path to the generation of dc spin currents in ordinary TMDs without external static electric or magnetic fields.

cond-mat.mes-hall↗

arXiv2018

Monolayer transition metal dichalcogenides in strong magnetic fields: Validating the Wannier model using a microscopic calculation

Using an equation of motion (EOM) approach, we calculate excitonic properties of monolayer transition metal dichalcogenides (TMDs) perturbed by an external magnetic field. We compare our findings to the widely used Wannier model for excitons in two-dimensional materials and to recent experimental results. We find good agreement between the calculated excitonic transition energies and the experimental results. In addition, we find that the exciton energies calculated using the EOM approach are slightly lower than the ones calculated using the Wannier model. Finally, we also show that the effect of the dielectric environment on the magnetoexciton transition energy is minimal due to counteracting changes in the exciton energy and the exchange self-energy correction.

cond-mat.mtrl-sci↗

arXiv2018

Nonlinear optical response of doped mono- and bilayer graphene: length gauge tight-binding model

We compute the nonlinear optical response of doped mono- and bilayer graphene using the full dispersion based on tight-binding models. The response is derived with the density matrix formalism using the length gauge and is valid for any periodic system, with arbitrary doping. By collecting terms that define effective nonlinear response tensors, we identify all nonlinear Drude-like terms (up to third-order) and show that all additional spurious divergences present in the induced current vanish. The nonlinear response of graphene comprises a large Drude-like divergence and three resonances that are tightly connected with transitions occurring in the vicinity of the Fermi level. The analytic solution derived using the Dirac approximation captures accurately the first- and third-order responses in graphene, even at very high doping levels. The quadratic response of gapped graphene is also strongly enhanced by doping, even for systems with small gaps such as commensurate structures of graphene on SiC. The nonlinear response of bilayer graphene is significantly richer, combining the resonances that stem from doping with its intrinsic strong low-energy resonances.

cond-mat.mes-hall↗

arXiv2018

Gauge invariance of excitonic linear and nonlinear optical response

We study the equivalence of four different approaches to calculate the excitonic linear and nonlinear optical response of multiband semiconductors. These four methods derive from two choices of gauge, i.e. length and velocity gauges, and two ways of computing the current density, i.e. direct evaluation and evaluation via the time-derivative of the polarization density. The linear and quadratic response functions are obtained for all methods by employing a perturbative density matrix approach within the mean-field approximation. The equivalence of all four methods is shown rigorously, when a correct interaction Hamiltonian is employed for the velocity gauge approaches. The correct interaction is written as a series of commutators containing the unperturbed Hamiltonian and position operators, which becomes equivalent to the conventional velocity gauge interaction in the limit of infinite Coulomb screening and infinitely many bands. As a case study, the theory is applied to hexagonal boron nitride monolayers, and the linear and nonlinear optical response found in different approaches are compared.

cond-mat.mtrl-sci↗

arXiv2017

Linear and nonlinear optical response of crystals using length and velocity gauges: Effect of basis truncation

We study the effects of a truncated band structure on the linear and nonlinear optical response of crystals using four methods. These are constructed by (i) choosing either length or velocity gauge for the perturbation and (ii) computing the current density either directly or via the time-derivative of the polarization density. In the infinite band limit, the results of all four methods are identical, but basis truncation breaks their equivalence. In particular, certain response functions vanish identically and unphysical low-frequency divergences are observed for few-band models in the velocity gauge. Using hexagonal boron nitride (hBN) monolayer as a case study, we analyze the problems associated with all methods and identify the optimal one. Our results show that the length gauge calculations provide the fastest convergence rates as well as the most accurate spectra for any basis size and, moreover, that low-frequency divergences are eliminated.

physics.optics↗

arXiv2017

Optical third harmonic generation in black phosphorus

We present a calculation of Third Harmonic Generation (THG) for two-band systems using the length gauge that avoids unphysical divergences otherwise present in the evaluation of the third order current density response. The calculation is applied to bulk and monolayer black Phosphorus (bP) using a non-orthogonal tight-binding model. Results show that the low energy response is dominated by mixed inter-intraband processes and estimates of the magnitude of THG susceptibility are comparable to recent experimental reports for bulk bP samples.

cond-mat.mes-hall↗

arXiv2015

Scaling behavior of spin transport in hydrogenated graphene

We calculate the spin transport of hydrogenated graphene using the Landauer-Büttiker formalism with a spin-dependent tight-binding Hamiltonian. The advantages of using this method is that it simultaneously gives information on sheet resistance and localization length as well as spin relaxation length. Furthermore, the Landauer-Büttiker formula can be computed very efficiently using the recursive Green's function technique. Previous theoretical results on spin relaxation time in hydrogenated graphene have not been in agreement with experiments. Here, we study magnetic defects in graphene with randomly aligned magnetic moments, where interference between spin-channels is explicitly included. We show that the spin relaxation length and sheet resistance scale nearly linearly with the impurity concentration. Moreover, the spin relaxation mechanism in hydrogenated graphene is Markovian only near the charge neutrality point or in the highly dilute impurity limit.

cond-mat.mes-hall↗

arXiv2014

Nonperturbative Quantum Physics from Low-Order Perturbation Theory

The Stark effect in hydrogen and the cubic anharmonic oscillator furnish examples of quantum systems where the perturbation results in a certain ionization probability by tunneling processes. Accordingly, the perturbed ground-state energy is shifted and broadened, thus acquiring an imaginary part which is considered to be a paradigm of nonperturbative behavior. Here we demonstrate how the low order coefficients of a divergent perturbation series can be used to obtain excellent approximations to both real and imaginary parts of the perturbed ground state eigenenergy. The key is to use analytic continuation functions with a built in analytic structure within the complex plane of the coupling constant, which is tailored by means of Bender-Wu dispersion relations. In the examples discussed the analytic continuation functions are Gauss hypergeometric functions, which take as input fourth order perturbation theory and return excellent approximations to the complex perturbed eigenvalue. These functions are Borel-consistent and dramatically outperform widely used Padé and Borel-Padé approaches, even for rather large values of the coupling constant.

cond-mat.stat-mech↗

arXiv2014

Dirac model of electronic transport in graphene antidot barriers

In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A promising method of achieving a band gap is by introducing nanoscale perforations (antidots) in a periodic pattern, known as a graphene antidot lattice (GAL). A graphene antidot barrier (GAB) can be made by introducing a 1D GAL strip in an otherwise pristine sheet of graphene. In this paper, we will use the Dirac equation (DE) with a spatially varying mass term to calculate the electronic transport through such structures. Our approach is much more general than previous attempts to use the Dirac equation to calculate scattering of Dirac electrons on antidots. The advantage of using the DE is that the computational time is scale invariant and our method may therefore be used to calculate properties of arbitrarily large structures. We show that the results of our Dirac model are in quantitative agreement with tight-binding for hexagonal antidots with armchair edges. Furthermore, for a wide range of structures, we verify that a relatively narrow GAB, with only a few antidots in the unit cell, is sufficient to give rise to a transport gap.

cond-mat.mes-hall↗

arXiv2014

Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models

The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphene antidot lattices (GALs) have previously been studied using atomistic models, which are very time consuming for large structures. We present a continuum model that uses the Dirac equation (DE) to describe the electronic and optical properties of GALs. The advantages of the Dirac model are that the calculation time does not depend on the size of the structures and that the results are scalable. In addition, an approximation of the band gap using the DE is presented. The Dirac model is compared with nearest-neighbour tight-binding (TB) in order to assess its accuracy. Extended zigzag regions give rise to localized edge states, whereas armchair edges do not. We find that the Dirac model is in quantitative agreement with TB for GALs without edge states, but deviates for antidots with large zigzag regions.

cond-mat.mes-hall↗

arXiv2011

Screening in graphene antidot lattices

We compute the dynamical polarization function for a graphene antidot lattice in the random-phase approximation. The computed polarization functions display a much more complicated structure than what is found for pristine graphene (even when evaluated beyond the Dirac-cone approximation); this reflects the miniband structure and the associated van Hove singularities of the antidot lattice. The polarization functions depend on the azimuthal angle of the {\bf q}-vector. We develop approximations to ease the numerical work, and critically evaluate the performance of the various schemes. We also compute the plasmon dispersion law, and find an approximate square-root dependence with a suppressed plasmon frequency as compared to doped graphene. The plasmon dispersion is nearly isotropic, and the developed approximation schemes agree well with the full calculation.

cond-mat.mes-hall↗