arXiv subjects

T. Grange

Publications and source records attributed to T. Grange.

11 recordsLinked to original sources

arXiv2025

Impact of Carrier Injector Design on the Threshold of Interband Cascade Lasers

We theoretically investigate how the injector region design of interband cascade lasers (ICLs) impacts the threshold carrier and current densities. The model combines a polarization-sensitive 8-band $\mathbf{k}\cdot\mathbf{p}$ calculation, electrostatics, and a microscopic calculation of Auger recombination rates. The inelastic carrier-carrier scattering is included to lowest order using quasi-equilibrium Green's functions. It captures the combined effects of charge-carrier redistribution, parasitic absorption, and bias voltage on the Auger recombination rate. We show that heavily doping the electron injector suppresses the dominant multi-hole Auger recombination by reducing the hole population of the recombination quantum wells. This agrees with the experimental observation that the heavy doping reduces threshold currents. Unlike the measurements, however, they do not increase at high doping concentrations in our model, which does not include scattering-mediated carrier escape and/or light absorption. Furthermore, by introducing indium to the conventional $\mathrm{Ga}\mathrm{Sb}$ hole injector wells, we explain the rule of thumb from experiments that raising the hole injector levels does not outperform the doping strategy. Our model provides physical insights for optimizing ICL carrier injectors.

cond-mat.mes-hall↗

arXiv2020

Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.

cond-mat.mtrl-sci↗

arXiv2018

Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions

n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.

cond-mat.mes-hall↗

arXiv2018

Giant non-linear interaction between two optical beams via a quantum dot embeddedin a photonic wire

Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.

physics.optics↗

arXiv2016

Scalable performance in solid-state single-photon sources

The desiderata for an ideal photon source are high brightness, high single-photon purity, and high indistinguishability. Defining brightness at the first collection lens, these properties have been simultaneously demonstrated with solid-state sources, however absolute source efficiencies remain close to the 1% level, and indistinguishability only demonstrated for photons emitted consecutively on the few nanosecond scale. Here we employ deterministic quantum dot-micropillar devices to demonstrate solid-state single-photon sources with scalable performance. In one device, an absolute brightness at the output of a single-mode fibre of 14% and purities of 97.1-99.0% are demonstrated. When non-resontantly excited, it emits a long stream of photons that exhibit indistinguishability up to 70%---above the classical limit of 50%---even after 33 consecutively emitted photons, a 400 ns separation between them. Resonant excitation in other devices results in near-optimal indistinguishability values: 96% at short timescales, remaining at 88% in timescales as large as 463 ns, after 39 emitted photons. The performance attained by our devices brings solid-state sources into a regime suitable for scalable implementations.

quant-ph↗

arXiv2015

Coherent control of a solid-state quantum bit with few-photon pulses

Single photons are the natural link between the nodes of a quantum network: they coherently propagate and interact with many types of quantum bits including natural and artificial atoms. Ideally, one atom should deterministically control the state of a photon and vice-versa. The interaction between free space photons and an atom is however intrinsically weak and many efforts have been dedicated to develop an efficient interface. Recently, it was shown that the propagation of light can be controlled by an atomic resonance coupled to a cavity or a single mode waveguide. Here we demonstrate that the state of a single artificial atom in a cavity can be efficiently controlled by a few-photon pulse. We study a quantum dot optimally coupled to an electrically-controlled cavity device, acting as a near optimal one-dimensional atom. By monitoring the exciton population through resonant fluorescence, we demonstrate Rabi oscillations with a $π$-pulse of only 3.8 photons on average. The probability to flip the exciton quantum bit with a single photon Fock state is calculated to reach 55% in the same device.

quant-ph↗

arXiv2015

Near optimal single photon sources in the solid state

Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks for quantum simulation of chemical and physical processes or for connecting quantum memories in a quantum computer. Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons. Semiconductor quantum dots inserted in photonic structures are ultrabright single photon sources, but the photon indistinguishability is limited by charge noise induced by nearby surfaces. The current state of the art for indistinguishability are parametric down conversion single-photon sources, but they intrinsically generate multiphoton events and hence must be operated at very low brightness to maintain high single photon purity. To date, no technology has proven to be capable of providing a source that simultaneously generates near-unity indistinguishability and pure single photons with high brightness. Here, we report on such devices made of quantum dots in electrically controlled cavity structures. We demonstrate on-demand, bright and ultra-pure single photon generation. Application of an electrical bias on deterministically fabricated devices is shown to fully cancel charge noise effects. Under resonant excitation, an indistinguishability of $0.9956\pm0.0045$ is evidenced with a $g^{2}(0)=0.0028\pm0.0012$. The photon extraction of $65%$ and measured brightness of $0.154\pm0.015$ make this source $20$ times brighter than any source of equal quality. This new generation of sources open the way to a new level of complexity and scalability in optical quantum manipulation.

quant-ph↗

arXiv2015

Cavity-Enhanced Two-Photon Interference using Remote Quantum Dot Sources

Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamics can efficiently improve the quantum interference between remote quantum dot sources: poorly indistinguishable photons can still interfere with good contrast with high quality photons emitted by a source in the strong Purcell regime. Our measurements and calculations show that cavity quantum electrodynamics is a powerful tool for interconnecting several devices.

cond-mat.mes-hall↗

arXiv2015

Tunable cavity coupling of the zero phonon line of a nitrogen-vacancy defect in diamond

We demonstrate the tunable enhancement of the zero phonon line of a single nitrogen-vacancy color center in diamond at cryogenic temperature. An open cavity fabricated using focused ion beam milling provides mode volumes as small as 1.24 $μ$m$^3$. In-situ tuning of the cavity resonance is achieved with piezoelectric actuators. At optimal coupling of the full open cavity the signal from individual zero phonon line transitions is enhanced by about a factor of 10 and the overall emission rate of the NV$^-$ center is increased by 40% compared with that measured from the same center in the absence of cavity field confinement. This result is important for the realization of efficient spin-photon interfaces and scalable quantum computing using optically addressable solid state spin qubits.

quant-ph↗

arXiv2007

Polaron relaxation in self-assembled quantum dots: Breakdown of the semi-classical model

We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately described by a semi-classical model. The contributions of different anharmonic decay channels are shown to depend strongly on the polaron energy. We calculate the energy dependence of polaron lifetime and compare our results to available experimental measurements of polaron decay time in InAs/GaAs quantum dots.

cond-mat.mes-hall↗

arXiv2007

Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots

Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay.

cond-mat.mes-hall↗