arXiv subjects

T. Granzow

Publications and source records attributed to T. Granzow.

5 recordsLinked to original sources

arXiv2025

Quantitative correlation between structural (dis-)order and diffuseness of phase transition in lead scandium tantalate

Ferroelectrics show a phase transition to a paraelectric phase at a well-defined transition temperature. Introducing disorder makes this transition diffuse, and the system becomes a relaxor. Since the degree of (dis-)order is usually manipulated by varying the chemical composition, it is difficult to establish a direct relationship between disorder and the degree of diffuseness. Perovskite structured lead scandium tantalate (Pb[Sc$_{1/2}$Ta$_{1/2}$]O$_3$, PST) offers the opportunity to tune the character of the transition by thermal annealing without changing the stoichiometry. Here it is demonstrated that there is a linear correlation between the structural ordering, quantified by the intensity ratio $S$ of the pseudocubic (111)/(200) x-ray diffraction peaks, and the diffuseness parameter $\gamma$ deduced from temperature-dependent dielectric spectroscopy. The relation is universal, independent of whether the sample is a thin film, multilayer capacitor or bulk ceramic, and also independent of the absolute value of the dielectric permittivity.

cond-mat.mtrl-sci↗

arXiv2024

Giant Strain Tunability in Polycrystalline Ceramic Films via Helium Implantation

Strain engineering is a powerful tool routinely used to control and enhance properties such as ferroelectricity, magnetic ordering, or metal-insulator transitions. Epitaxial strain in thin films allows manipulation of in-plane lattice parameters, achieving strain values generally up to 4%, and above in some specific cases. In polycrystalline films, which are more suitable for functional applications due to their lower fabrication costs, strains above 1% often cause cracking. This poses challenges for functional property tuning by strain engineering. Helium implantation has been shown to induce negative pressure through interstitial implantation, which increases the unit cell volume and allows for continuous strain tuning with the implanted dose in epitaxial monocrystalline films. However, there have been no studies on the transferability of helium implantation as a strain-engineering technique to polycrystalline films. Here, we demonstrate the technique's applicability for strain engineering beyond epitaxial monocrystalline samples. Helium implantation can trigger an unprecedented lattice parameter expansion of up to 3.2% in polycrystalline BiFeO3 films without causing structural cracks. The film maintains stable ferroelectric properties with doses up to 1E15 He/cm2. This finding underscores the potential of helium implantation in strain engineering polycrystalline materials, enabling cost-effective and versatile applications.

cond-mat.mtrl-sci↗

arXiv2021

Influence of charged walls and defects on DC resistivity and dielectric relaxation in Cu-Cl boracite

Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we present the dielectric permittivity and DC resistivity of bulk Cu-Cl boracite as a function of temperature (-140 °C to 150 °C) and frequency (1 mHz to 10 MHz). The thermal behaviour of the two observed dielectric relaxations and the DC resistivity is discussed. We propose that the relaxations can be explained by the existence of point defects, most likely local complexes created by a change of valence of Cu and accompanying oxygen vacancies. In addition, the sudden change in resistivity seen at the phase transition suggests that conductive domain walls contribute significantly to the conductivity in the ferroelectric phase.

cond-mat.mtrl-sci↗

arXiv2009

Aging of poled ferroelectric ceramics due to relaxation of random depolarization fields by space-charge accumulation near grain boundaries

Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias field. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grains. The kinetics of charge migration assumes presence of mobile oxygen vacancies in the material due to the intentional or unintentional acceptor doping. Satisfactory agreement of the theory with experiment on the Fe-doped lead zirconate titanate is demonstrated.

cond-mat.mtrl-sci↗

arXiv1999

Phaseseparation in overdoped Y_{1-0.8}Ca_{0-0.2}Ba_2Cu_3O_{6.96-6.98}

The dimpling in the CuO_2 planes of overdoped Y_{1-y}Ca_yBa_2Cu_3 O_{6.96-6.98} (y=0.02-0.2) has been measured by x-ray absorption-fine- structure spectroscopy (Y-K EXAFS). A step-like decrease around 12% Ca indicates a percolation threshold for distorted sites of 5 cells, and thus phase segregation. We conclude the charge carriers added by substitution of Y{3+} by Ca{2+} to be trapped at the Ca sites and their nn environment.

cond-mat.supr-con↗