arXiv subjects

T. H. Kim

Publications and source records attributed to T. H. Kim.

At least 19 recordsLinked to original sources

arXiv2024

Anisotropic manipulation of terahertz spin-waves by spin-orbit torque in a canted antiferromagnet

We theoretically and numerically elucidate the electrical control over spin waves in antiferromagnetic materials (AFM) with biaxial anisotropies and Dzyaloshinskii-Moriya interactions. The spin wave dispersion in an AFM manifests as a bifurcated spectrum with distinct high-frequency and low-frequency bands. Utilizing a heterostructure comprised of platinum and the AFM, we demonstrate anisotropic control of spin-wave bands via spin currents with three-dimensional spin polarizations, encompassing both resonant and propagating wave modes. Moreover, leveraging the confined geometry, we explore the possibility of controlling spin waves within a spectral domain ranging from tens of gigahertz to sub-terahertz frequencies. The implications of our findings suggest the potential for developing a terahertz wave source with electrical tunability, thereby facilitating its incorporation into ultrafast, broadband, and wireless communication technologies.

physics.app-ph↗

arXiv2021

Condensation of cometary silicate dust using an induction thermal plasma system I. Enstatite and CI chondritic composition

Glass with embedded metal and sulfides (GEMS) is a major component of chondritic porous interplanetary dust particles. Although GEMS is one of the most primitive components in the Solar System, its formation process and conditions have not been constrained. We performed condensation experiments of gases in the system of Mg-Si-O (MgSiO3 composition) and of the S-free CI chondritic composition (Si-Mg-Fe-Na-Al-Ca-Ni-O system) in induction thermal plasma equipment. Amorphous Mg-silicate particles condensed in the experiments of the Mg-Si-O system, and their grain size distribution depended on the experimental conditions (mainly partial pressure of SiO). In the CI chondritic composition experiments, irregularly shaped amorphous silicate particles of less than a few hundred nanometers embedded with multiple Fe-Ni nanoparticles of ~<20 nm were successfully synthesized. These characteristics are very similar to those of GEMS, except for the presence of FeSi instead of sulfide grains. We propose that the condensation of amorphous silicate grains smaller than a few tens of nanometers and with metallic cores, followed by coagulation, could be the precursor material that forms GEMS prior to sulfidation.

astro-ph.EP↗

arXiv2021

In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Spin orbit torque switching of antiferromagnet through the Neel reorientation in rare-earth ferrite

We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is perpendicular to the easy axes and therefore creates weak magnetization (m). A damping-like component of the SOT induces Néel reorientation along one of the easy axes and then exerts torque on m, leading to tilting of the Néel order l. The torque on the magnetization becomes stronger due to coupling with the induced Oersted field or the field-like component of the SOT, enhancing the tilting of l. Therefore, l is found to experience deterministic switching after the SOT is turned off. Based upon both numerical and analytical analysis of the coherent switching, XOR logic gates are also found to be implemented in a single magnetic layer. In addition, we investigate how magnetic parameters affect the critical reorientation angle and current density in a simple layered structure of platinum and a canted AFM. Our findings are expected to provide an alternative spin-switching mechanism for ultrafast applications such as spin logic and electronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Strain-Driven Disproportionation at a Correlated Oxide Metal-Insulator Transition

Metal-to-insulator phase transitions in complex oxide thin films are exciting phenomena which may be useful for device applications, but in many cases the physical mechanism responsible for the transition is not fully understood. Here we demonstrate that epitaxial strain generates local disproportionation of the NiO6 octahedra, driven through changes in the oxygen stoichiometry, and that this directly modifies the metal-to-insulator phase transition in epitaxial (001) NdNiO3 thin films. Theoretically, we predict that the Ni-O-Ni bond angle decreases, while octahedral tilt and local disproportionation of the NiO6 octahedra increases resulting in a small band gap in otherwise metallic system. This is driven by an increase in oxygen vacancy concentration in the rare-earth nickelates with increasing in-plane biaxial tensile strain. Experimentally, we find an increase in pseudocubic unit-cell volume and resistivity with increasing biaxial tensile strain, corroborating our theoretical predictions. With electron energy loss spectroscopy and x-ray absorption, we find a reduction of the Ni valence with increasing tensile strain. These results indicate that epitaxial strain modifies the oxygen stoichiometry of rare-earth perovskite thin films and through this mechanism affect the metal-to-insulator phase transition in these compounds.

cond-mat.mtrl-sci↗

arXiv2019

Chiral-induced switching of antiferromagnet spins in a confined nanowire

In the development of spin-based electronic devices, a particular challenge is the manipulation of the magnetic state with high speed and low power consumption. Although research has focused on the current-induced spin-orbit torque based on strong spin-orbit coupling, the charge-based and the torque-driven devices have fundamental limitations: Joule heating, phase mismatching and overshooting. In this work, we investigate numerically and theoretically alternative switching scenario of antiferromagnetic insulator in one-dimensional confined nanowire sandwiched with two electrodes. As the electric field could break inversion symmetry and induce Dzyaloshinskii-Moriya interaction and pseudo-dipole anisotropy, the resulting spiral texture takes symmetric or antisymmetric configuration due to additional coupling with the crystalline anisotropy. Therefore, by competing two spiral states, we show that the magnetization reversal of antiferromagnets is realized, which is valid in ferromagnetic counterpart. Our finding provides promising opportunities to realize the rapid and energy-efficient electrical manipulation of magnetization for future spin-based electronic devices.

physics.app-ph↗

arXiv2011

Measurement Limits to 134Cs Concentration in Soil

We investigate the caesium concentrations in soils in mountain areas near Gori nuclear power plant in Korea, focusing on the measurement limits to the 134Cs. In order to lower the minimum detectable amount (MDA) of activity for the 134Cs, we have used the ammonium molybdophosphase (AMP) precipitation method to get rid of the 40K existing in natural radioactivity, which reduces the MDA activity about ten times smaller than those without the AMP precipitation method. The MDA results for the 134Cs were found to be in the range between 0.015 and 0.044 Bq/kg-dry weight. In order to diminish the background, we also have measured a part of the soil samples in Yangyang, a small town in the east coast of Korea. However, it turns out that in order to detect the 134Cs in the samples the MDA should be reduced to the level of mBq/kg-dry weight.

physics.med-ph↗

arXiv2011

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.

cond-mat.mtrl-sci↗

arXiv2011

Charge states and magnetic ordering in LaMnO3/SrTiO3 superlattices

We investigated the magnetic and optical properties of [(LaMnO3)n/(SrTiO3)8]20 (n = 1, 2, and 8) superlattices grown by pulsed laser deposition. We found a weak ferromagnetic and semiconducting state developed in all superlattices. An analysis of the optical conductivity showed that the LaMnO3 layers in the superlattices were slightly doped. The amount of doping was almost identical regardless of the LaMnO3 layer thickness up to eight unit cells, suggesting that the effect is not limited to the interface. On the other hand, the magnetic ordering became less stable as the LaMnO3 layer thickness decreased, probably due to a dimensional effect.

cond-mat.str-el↗

arXiv2011

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

cond-mat.mtrl-sci↗

arXiv2010

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.

cond-mat.mtrl-sci↗

arXiv2009

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.

cond-mat.mes-hall↗

arXiv2009

Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films

We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field.

cond-mat.mtrl-sci↗

arXiv2007

Neel to Spin-Glass-like Phase Transition versus Dilution in Geometrically Frustrated ZnCr_{2-2x}Ga_{2x}O_4

ZnCr2O4 undergoes a first order spin-Peierls-like phase transition at 12.5 K from a cubic spin liquid phase to a tetragonal Neel state. Using powder diffraction and single crystal polarized neutron scattering, we determined the complex spin structure of the Neel phase. This phase consisted of several magnetic domains with different characteristic wave vectors. This indicates that the tetragonal phase of ZnCr2O4 is very close to a critical point surrounded by many different Neel states. We have also studied, using elastic and inelastic neutron scattering techniques, the effect of nonmagnetic dilution on magnetic correlations in ZnCr_{2-2x}Ga_{2x}O_4 (x=0.05 and 0.3). For x=0.05, the magnetic correlations do not change qualitatively from those in the pure material, except that the phase transition becomes second order. For x= 0.3, the spin-spin correlations become short range. Interestingly, the spatial correlations of the frozen spins in the x=0.3 material are the same as those of the fluctuating moments in the pure and the weakly diluted materials.

cond-mat.str-el↗

arXiv2007

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. We found that the number of nuclei is linearly proportional to log(switching time), suggesting a broad distribution of activation energies for nucleation. The nucleation sites for a positive bias differ from those for a negative bias, indicating that most nucleation sites are located at ferroelectric/electrode interfaces.

cond-mat.mtrl-sci↗

arXiv2007

Observation of room-temperature ferroelectricity in tetragonal strontium titanate thin films on SrTiO3 (001) substrates

We investigated the ferroelectric properties of strontium titanate (STO) thin films deposited on SrTiO3 (001) substrate with SrRuO3 electrodes. The STO layer was grown coherently on the SrTiO3 substrate without in-plane lattice relaxation, but its out-of-plane lattice constant increased with a decrease in the oxygen pressure during deposition. Using piezoresponse force microscopy and P-V measurements, we showed that our tetragonal STO films possess room-temperature ferroelectricity. We discuss the possible origins of the observed ferroelectricity.

cond-mat.mtrl-sci↗

arXiv2002

Emergent excitations in a geometrically frustrated magnet

Frustrated systems are ubiquitous and interesting because their behavior is difficult to predict. Magnetism offers extreme examples in the form of spin lattices where all interactions between spins cannot be simultaneously satisfied. Such geometrical frustration leads to macroscopic degeneracies, and offers the possibility of qualitatively new states of matter whose nature has yet to be fully understood. Here we have discovered how novel composite spin degrees of freedom can emerge from frustrated interactions in the cubic spinel ZnCr2O4. Upon cooling, groups of six spins self-organize into weakly interacting antiferromagnetic loops whose directors, defined as the unique direction along which the spins are aligned parallel or antiparallel, govern all low temperature dynamics. The experimental evidence comes from a measurement of the magnetic form factor by inelastic neutron scattering. While the data bears no resemblance to the atomic form factor for chromium, they are perfectly consistent with the form factor for hexagonal spin loop directors. The hexagon directors are to a first approximation decoupled from each other and hence their reorientations embody the long-sought local zero energy modes for the pyrochlore lattice.

cond-mat.str-el↗

arXiv2002

A Detailed Monte-Carlo Simulation for the Belle TOF System

We have developed a detailed Monte Carlo simulation program for the Belle TOF system. Based on GEANT simulation, it takes account of all physics processes in the TOF scintillation counters and readout electronics. The simulation reproduces very well the performance of the Belle TOF system, including the dE/dx response, the time walk effect, the time resolution, and the hit efficiency due to beam background. In this report, we will describe the Belle TOF simulation program in detail.

hep-ex↗