arXiv subjects

T. Hatano

Publications and source records attributed to T. Hatano.

36 records · Page 2Linked to original sources

arXiv2010

Coherent THz emission of Bi_2Sr_2CaCu_2O_8 intrinsic Josephson junction stacks in the hot spot regime

We report on THz emission measurements and low temperature scanning laser imaging of Bi_2Sr_2CaCu_2O_8 intrinsic Josephson junction stacks. Coherent emission is observed at large dc input power, where a hot spot and a standing wave, formed in the "cold" part of the stack, coexist. By varying the hot spot size the cavity resonance frequency and the emitted radiation can be tuned. The linewidth of radiation is much smaller than expected from the quality factor of the cavity mode excited. Thus, an additional mechanism of synchronization seems to play a role, possibly arising from nonequilibrium processes at the hot spot edge.

cond-mat.supr-con↗

arXiv2009

Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule

We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.

cond-mat.mes-hall↗

arXiv2009

Preparation of electron-doped La(2-x)CexCuO4 thin films with various Ce doping by dc magnetron sputtering

A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been scrutinized. We find that the quality of the films is less sensitive to the deposition temperature in the overdoped region than that in the underdoped region. In the phase diagram of Tc(x), the superconducting dome indicates that the optimally doping level is at the point x=0.105 with the transition temperature Tc0 = 26.5 K. Further more, both the disappearance of the upturn in the $ρ_{xx}$(T) curve at low temperature under H=10 T and the positive differential Hall coefficient, $R_H'=d ρ_{xy}/dH$, are observed around x = 0.15, implying a possible rearrangement of Fermi surface at this doping level.

cond-mat.supr-con↗

arXiv2009

Thickness-induced insufficient oxygen reduction in La(2-x)CexCuO4 thin films

A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative direction. Further more, the X-ray diffraction data reveal that the c-axis lattice constant c0 increases with the decrease of film thickness. These abnormal phenomena can be attributed to the insufficient oxygen reduction in the thin films. Considering the lattice mismatching in the ab-plane between the SrTiO3 substrates and the films, the compressive stress from the substrates may be responsible for the more difficult reduction of the oxygen in the thin films.

cond-mat.supr-con↗

arXiv2008

Anomalous flux quantization and formation of dipole-flux state in a multiply-connected high-Tc NdBa2Cu3O7-d superconductor

High-resolution scanning superconducting quantum interference device (SQUID) microscopy was used to study the flux quantization phenomenon in multiply-connected anisotropic high-Tc NdBa2Cu3O7-d single crystalline thin films. The spatial distribution of internal flux in a hole was found to be non-uniform and changed drastically for applied small fields. With increased fields above 10uT, a local magnetic dipole flux developed inside the hole, in contrast to an isotropic Nb superconductor. The total net flux trapped in a hole was kept to be constant for larger holes, but the abrupt transition of flux quantization state was observed for smaller holes. The possible explanation is given based on the anisotropic dx2-y2-wave order parameter of high-Tc superconductors.

cond-mat.supr-con↗

arXiv2008

Hot spots and waves in Bi2Sr2CaCu2O8 intrinsic Josephson junction stacks -a study by Low Temperature Scanning Laser Microscopy

Recently, it has been shown that large stacks of intrinsic Josephson junctions in Bi2Sr2CaCu2O8 emit synchronous THz radiation, the synchronization presumably triggered by a cavity resonance. To investigate this effect we use Low Temperature Scanning Laser Microscopy to image electric field distributions. Apart from verifying the appearance of cavity modes at low bias we find that, in a high input power regime, standing-wave patterns are created through interactions with a hot spot, possibly pointing to a new mode of generating synchronized radiation in intrinsic Josephson junction stacks.

cond-mat.supr-con↗

arXiv2008

Accurate Model of a Vertical Pillar Quantum Dot

An accurate model of a vertical pillar quantum dot is described. The full three dimensional structure of the device containing the dot is taken into account and this leads to an effective two dimensional model in which electrons move in the two lateral dimensions, the confinement is parabolic and the interaction potential is very different from the bare Coulomb potential. The potentials are found from the device structure and a few adjustable parameters. Numerically stable calculation procedures for the interaction potential are detailed and procedures for deriving parameter values from experimental addition energy and chemical potential data are described. The model is able to explain magnetic field dependent addition energy and chemical potential data for an individual dot to an accuracy of about 5%, the accuracy level needed to determine ground state quantum numbers from experimental transport data. Applications to excited state transport data are also described.

cond-mat.mes-hall↗

arXiv2007

Direct observation of quantized interlayer vortex flow and vortex pinning distribution in high-Tc La_(1.87)Sr_(0.13)CuO_4 single crystals

A scanning superconducting quantum interference device (SQUID) microscope (SSM) is used to study the magnetic imaging of dynamic motion of quantized interlayer vortices induced by the Lorentz force in anisotropic high-Tc La_(1.87)Sr_(0.13)CuO_4 single crystals. It is found that 3 modes of flux motion switch depending on the transport current. By increasing the current a transition from the creep-like behavior of vortices to a steady flow of vortices was observed. Even higher current induced a continuous expansion of vortex-flow area indicating an inhomogeneous distribution of various pinning centers.

cond-mat.supr-con↗

arXiv2006

Periodic oscillations of flux flow resistance in intrinsic Josephson junctions with various lateral sizes down to a size of non-linear core of Josephson vortex

To investigate in-phase structures (rectangular lattice) of Josephson vortex lattice (JVL) in intrinsic Josephson junctions (IJJs) of Bi2Sr2CaCu2O8+d, we fabricated IJJs with various lateral sizes down to a size of non-linear core of Josephson vortex using focused-ion-beam etching and measured flux flow resistance (RFF) with in-plane magnetic fields (H). We have found that above a size-independent critical field, the critical current shows Fraunhofer pattern in narrow-length IJJs (0.29-2.77 mm), and then the RFF~H oscillates with H0 period. Most strikingly, such oscillations become pulse-like in sub-micron IJJs, indicating that between the pulses, the rectangular JVLs become major structures.

cond-mat.supr-con↗

arXiv2006

Periodic Oscillations of Josephson-Vortex Flow Resistance in Oxygen-Deficient Y1Ba2Cu3Ox

We measured the Josephson vortex flow resistance as a function of magnetic field applied parallel to the ab-planes using annealed Y1Ba2Cu3Ox intrinsic Josephson junctions having high anisotropy (around 40) by oxygen content reduction. Periodic oscillations were observed in magnetic fields above 45-58 kOe, corresponding to dense-dilute boundary for Josephson vortex lattice. The observed period of oscillations, agrees well with the increase of one fluxon per two junctions ($H_{p}$\textit{=$Φ$}$_{0}$\textit{/2Ls}), may correspond to formation of a triangular lattice of Josephson vortices as has been reported by Ooi et al. for highly anisotropic (larger than 200) Bi-2212 intrinsic Josephson junctions.

cond-mat.supr-con↗

arXiv2005

Intermediate Low Spin States in a Few-electron Quantum Dot in the $ν\le 1$ Regime

We study the effects of electron-electron interactions in a circular few-electron vertical quantum dot in such a strong magnetic field that the filling factor $ν\le 1$. We measure excitation spectra and find ground state transitions beyond the maximum density droplet ($ν=1$) region. We compare the observed spectra with those calculated by exact diagonalization to identify the ground state quantum numbers, and find that intermediate low-spin states occur between adjacent spin-polarized magic number states.

cond-mat.mes-hall↗

arXiv2005

Electronic Structure of Multiple Dots

We calculate, via spin density functional theory (SDFT) and exact diagonalization, the eigenstates for electrons in a variety of external potentials, including double and triple dots. The SDFT calculations employ realistic wafer profiles and gate geometries and also serve as the basis for the exact diagonalization calculations. The exchange interaction J between electrons is the difference between singlet and triplet ground state energies and reflects competition between tunneling and the exchange matrix element, both of which result from overlap in the barrier. For double dots, a characteristic transition from singlet ground state to triplet ground state (positive to negative J) is calculated. For the triple dot geometry with 2 electrons we also find the electronic structure with exact diagonalization. For larger electron number (18 and 20) we use only SDFT. In contrast to the double dot case, the triple dot case shows a quasi-periodic fluctuation of J with magnetic field which we attribute to periodic variations of the basis states in response to changing flux quanta threading the triple dot structure.

cond-mat.mes-hall↗

arXiv2005

Fiske steps studied with flux-flow resistance oscillation in a narrow stack of Bi2Sr2CaCu2O8+d junctions

We have experimentally investigated the fluxon dynamics in a narrow Bi2Sr2CaCu2O8+d stack with junction length L~1.8 um. As an evidence of high-frequency excitation by a collective cavity mode, under an (in-plane) external magnetic field, the current-voltage characteristics show prominent Fiske steps with the corresponding resonance frequencies of 75-305 GHz. Further study of flux-flow resistance oscillation with various c-axis currents clarifies the correlation with Fiske steps by distinguishing two different regions i.e., static flux-flow region at low bias current level and dynamic Fiske step region at high bias current level.

cond-mat.supr-con↗

arXiv2005

Macroscopic quantum tunneling in a d-wave high-Tc superconductor

There is a wide recognition that Josephson-junction-like structures intrinsic to the layered cuprate high temperature superconductors offer an attractive stage for exploiting possible applications to new quantum technologies. On the other hand the low energy quasiparticle excitations characteristically present in these d-wave superconductors may easily destruct the coherence required. Here we demonstrate for the first time the feasibility of macroscopic quantum tunneling in the intrinsic Josephson junctions of a high temperature superconductor, and find it to be characterized by a high classic-to-quantum crossover temperature and a relatively weak quasiparticle dissipation.

cond-mat.supr-con↗

arXiv2004

Superconductivity in CVD Diamond Thin Film Well-Above Liquid Helium Temperature

Diamond has always been adored as a jewel. Even more fascinating is its outstanding physical properties; it is the hardest material known in the world with the highest thermal conductivity. Meanwhile, when we turn to its electrical properties, diamond is a rather featureless electrical insulator. However, with boron doping, it becomes a p-type semiconductor, with boron acting as a charge acceptor. Therefore the recent news of superconductivity in heavily boron-doped diamond synthesized by high pressure sintering was received with considerable surprise. Opening up new possibilities for diamond-based electrical devices, a systematic investigation of these phenomena clearly needs to be achieved. Here we show unambiguous evidence of superconductivity in a diamond thin film deposited by a chemical vapor deposition (CVD) method. Furthermore the onset of the superconducting transition is found to be 7.4K, which is higher than the reported value in ref(7) and well above helium liquid temperature. This finding establishes the superconductivity to be a universal property of boron-doped diamond, demonstrating that device application is indeed a feasible challenge.

cond-mat.supr-con↗

arXiv2004

Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots

We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage behavior provides electronic addition energies exactly as the linear, Coulomb blockade oscillation does. By analyzing it, we identify the s and p shell addition spectrum for up to six electrons in the single InAs dot, i.e. one of the coupled dots. The evolution of shell addition spectrum with magnetic field provides Fock-Darwin spectra of s and p shell.

cond-mat.mes-hall↗

arXiv2004

Molecular states observed in a single pair of strongly coupled self-assembled InAs quantum dots

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We observe a series of well-formed Coulomb diamonds with charging energy of less than 5 meV, which are much smaller than those reported previously. This is because electrons are occupied in molecular states, which are spread over both dots and occupy a large volume. In the measurement of ground and excited state single electron transport spectra with magnetic field, we find that the electrons are sequentially trapped in symmetric and anti-symmetric states. This result is well-explained by numerical calculation using an exact diagonalization method.

cond-mat.mes-hall↗

arXiv2001

Superconducting Properties of MgB2 Bulk Materials Prepared by High Pressure Sintering

High-density bulk materials of a newly discovered 40K intermetallic MgB2 superconductor were prepared by high pressure sintering. Superconducting transition with the onset temperature of 39K was confirmed by both magnetic and resistive measurements. Magnetization versus field (M-H) curve shows the behavior of a typical Type II superconductor and the lower critical field Hc1(0) estimated from M-H curve is 0.032T. The bulk sample shows good connection between grains and critical current density Jc estimated from the magnetization hysteresis using sample size was 2x104A/cm2 at 20K and 1T. Upper critical field Hc2(0) determined by extrapolating the onset of resistive transition and assuming a dirty limit is 18T.

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