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T. Herrmannsdoerfer

Publications and source records attributed to T. Herrmannsdoerfer.

3 recordsLinked to original sources

High-Field and Light-Dependent Magnetization Provides Evidence for Coexisting Granular Superconductivity and Superparamagnetism in Nitrogen-Doped Diamond

We investigated the field-, temperature-, and time-dependent magnetic moment of a nitrogen-doped type Ib diamond in darkness and under monochromatic light with a low laser intensity of about 160 $μ$W cm$^{-2}$. In darkness, below approximately 25 K, the magnetic moment exhibits unconventional hysteresis loops that can be explained by the coexistence of superparamagnetism and superconductivity in certain regions of the sample. Under illumination, this hysteresis largely disappears, leaving mainly the superparamagnetic contribution. Temperature-dependent measurements reveal an irreversibility below 25 K in darkness, which vanishes under illumination. Similarly, at 0.5 T and below 25 K, the time-dependent magnetization shows flux-creep-like behavior that disappears when the sample is illuminated. All light-induced changes are fully reversible: the magnetic properties measured in darkness are restored after the sample is heated above roughly 50 K. Removing the superparamagnetic contribution from magnetization measurements up to $\pm 14$ T reveals clear characteristics of a granular superconductor, namely, a well-defined penetration field $H_p \approx 2.6$ T and a critical field $H_{c2} \approx 10.6$ T. Based on theoretical considerations, we attribute the observed phenomena to the combined effects of internal stress and local variations in nitrogen concentration within localized regions that can be regarded as grains. This interpretation is supported by Raman and birefringence spectroscopy measurements on the same sample.

cond-mat.supr-con↗

Fe-implanted ZnO: Magnetic precipitates versus dilution

Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single crystals comprehensively. Different implantation fluences and temperatures and post-implantation annealing temperatures have been chosen in order to evaluate the structural and magnetic properties over a wide range of parameters. Three different regimes with respect to the Fe concentration and the process temperature are found: 1) Disperse Fe$^{2+}$ and Fe$^{3+}$ at low Fe concentrations and low processing temperatures, 2) FeZn$_2$O$_4$ at very high processing temperatures and 3) an intermediate regime with a co-existence of metallic Fe (Fe$^0$) and ionic Fe (Fe$^{2+}$ and Fe$^{3+}$). Ferromagnetism is only observed in the latter two cases, where inverted ZnFe$_2$O$_4$ and $α$-Fe nanocrystals are the origin of the observed ferromagnetic behavior, respectively. The ionic Fe in the last case could contribute to a carrier mediated coupling. However, their separation is too large to couple ferromagnetically due to the lack of p-type carrier. For comparison investigations of Fe-implanted epitaxial ZnO thin films are presented.

cond-mat.mtrl-sci↗

Fe implanted ferromagnetic ZnO

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).

cond-mat.mtrl-sci↗