SearcharxivSearch

arXiv subjects

T. Iwasaki

Publications and source records attributed to T. Iwasaki.

6 recordsLinked to original sources

Diamond quantum magnetometer with dc sensitivity of < 10 pT Hz$^{-1/2}$ toward measurement of biomagnetic field

We present a sensitive diamond quantum sensor with a magnetic field sensitivity of $9.4 \pm 0.1~\mathrm{pT/\sqrt{Hz}}$ in a near-dc frequency range of 5 to 100~Hz. This sensor is based on the continuous-wave optically detected magnetic resonance of an ensemble of nitrogen-vacancy centers along the [111] direction in a diamond (111) single crystal. The long $T_{2}^{\ast} \sim 2~\mathrm{μs}$ in our diamond and the reduced intensity noise in laser-induced fluorescence result in remarkable sensitivity among diamond quantum sensors. Based on an Allan deviation analysis, we demonstrate that a sub-picotesla field of 0.3~pT is detectable by interrogating the magnetic field for a few thousand seconds. The sensor head is compatible with various practical applications and allows a minimum measurement distance of about 1~mm from the sensing region. The proposed sensor facilitates the practical application of diamond quantum sensors.

quant-ph

Extending spin dephasing time of perfectly aligned Nitrogen-Vacancy centers by mitigating stress distribution on highly misoriented chemical-vapor-deposition diamond

Extending the spin-dephasing time (T2*) of perfectly aligned nitrogen-vacancy (NV) centers in large-volume chemical vapor deposition (CVD) diamonds leads to enhanced DC magnetic sensitivity. However, T2* of the NV centers is significantly reduced by the stress distribution in the diamond film as its thickness increases. To overcome this issue, we developed a method to mitigate the stress distribution in the CVD diamond films, leading to a T2* extension of the ensemble NV centers. CVD diamond films of approximately 50 μm thickness with perfectly aligned NV centers were formed on (111) diamond substrates with misorientation angles of 2.0, 3.7, 5.0, and 10°. We found that T2* of the ensemble of NV centers increased to approach the value limited only by the electron and nuclear spin bath with increasing the misorientation angle. Microscopic stress measurements revealed that the stress distribution was highly inhomogeneous along the depth direction in the CVD diamond film at low misorientation angles, whereas the inhomogeneity was largely suppressed on highly misoriented substrates. The reduced stress distribution possibly originates from the reduction of the dislocation density in the CVD diamond. This study provides an important method for synthesizing high-quality diamond materials for use in highly sensitive quantum sensors.

physics.app-ph

Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation

Quasi-free standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the 6root3 reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free standing graphene monolayer with its typical linear pi-bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees Celsius.

cond-mat.mtrl-sci

Auger Effect in the High-Resolution Ce 3d-edge Resonant Photoemission

The bulk-sensitive Ce 4$f$ spectral weights of various Ce compounds including CeFe$_2$, CeNi$_2$, and CeSi$_2$ were obtained with the resonant photoemission technique at the Ce 3d-edge. We found the lineshapes change significantly with the small change of the incident photon energy. Detailed analysis showed that this phenomenon results primarily from the Auger transition between different multiplet states of the Ce $\underline{3d_{5/2}}4f^2$ (bar denotes a hole) electronic configuration in the intermediate state of the resonant process. This tells us that extra care should be taken for the choice of the resonant photon energy when extracting Ce 4$f$ spectral weights from the Ce 3$d$-edge resonant photoemission spectra. The absorption energy corresponding to the lowest multiplet structure of the Ce $\underline{3d_{5/2}}4f^2$ configuration seems to be the logical choice.

cond-mat.str-el

Localized Character of 4f Electrons in CeRh$_x$(x=2,3) and CeNi$_x$(x=2,5)

We have measured Ce 4f spectral weights of extremely $α$-like Ce-transition metal intermetallic compounds CeRh$_x$ (x=2,3) and CeNi$_x$ (x=2,5) by using the {\it bulk-sensitive} resonant photoemission technique at the Ce $M_5$($3d_{5/2}\to4f$)-edge. Unprecedentedly high energy resolution and longer escape depth of photoemitted electron at this photon energy enabled us to distinguish the sharp Kondo resonance tails at the Fermi level, which can be well described by the Gunnarsson-Schönhammer(GS) calculation based on the Anderson Impurity Hamiltonian. On the other hand, the itinerant 4f band description shows big discrepancies, which implies that Ce 4f electrons retain localized characters even in extremely $α$-like compounds.

cond-mat.str-el

High-resolution Ce 3d-edge resonant photoemission study of CeNi_2

Resonant photoemission (RPES) at the Ce 3d -> 4f threshold has been performed for alpha-like compound CeNi_2 with extremely high energy resolution (full width at half maximum < 0.2 eV) to obtain bulk-sensitive 4f spectral weight. The on-resonance spectrum shows a sharp resolution-limited peak near the Fermi energy which can be assigned to the tail of the Kondo resonance. However, the spin-orbit side band around 0.3 eV binding energy corresponding to the f_{7/2} peak is washed out, in contrast to the RPES spectrum at the Ce 3d -> 4f RPES threshold. This is interpreted as due to the different surface sensitivity, and the bulk-sensitive Ce 3d -> 4f RPES spectra are found to be consistent with other electron spectroscopy and low energy properties for alpha-like Ce-transition metal compounds, thus resolves controversy on the interpretation of Ce compound photoemission. The 4f spectral weight over the whole valence band can also be fitted fairly well with the Gunnarsson-Schoenhammer calculation of the single impurity Anderson model, although the detailed features show some dependence on the hybridization band shape and (possibly) Ce 5d emissions.

cond-mat.str-el