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T. Jungwirth

Publications and source records attributed to T. Jungwirth.

At least 19 recordsLinked to original sources

Discerning ground state and photoemission-induced spin textures in altermagnetic $\alpha$-MnTe

The recently discovered class of altermagnets provide a physical realization of an unconventional compensated magnetic phase with a higher partial-wave type of ordering, reminiscent of unconventional superfluid phases. Their stability under normal conditions has sparked significant research interest, spanning fields from spintronics to topological and correlated quantum materials. Spin- and angle-resolved photoemission spectroscopy (SARPES) has great promise to resolve the momentum-dependent spin textures, which are intricately interweaved with the altermagnetic direct space spin order. Using the relativistic $d$-wave-like collinear spin polarization on one of the non-relativistic nodal surfaces of the altermagnetic band structure of $\alpha$-MnTe as an example, we here identify and resolve the challenges associated with (S)ARPES studies on altermagnets. We focus particularly on the role of photoemission-induced electron polarization and the coupling between light and the N\'eel vector of a magnetic domain. Our findings reveal an atypical behaviour of photoemission selection rules while using linearly-polarized light. Our methods allow to distinguish polarization of photoelectrons originating from the sample's ground state spin texture, on one hand, and from the photoemission process, on the other hand. Our experimental results are supported by a combination of ab initio band-structure and 1-step photoemission calculations.

cond-mat.str-el

Unconventional relativistic spin polarization of electronic bands in an altermagnet

Altermagnetism is a recently identified phase with a d, g or i-wave spin symmetry of magnetic ordering. Its discovery opens new research fronts at intersections of magnetism and spintronics with fields ranging from superconductivity to topological and relativistic quantum physics. Here we demonstrate an unconventional relativistic spin polarization in an altermagnet by spin and angle resolved photoemission spectroscopy of electronic bands in single-domain MnTe. The relativistic spin-orbit coupling origin is revealed by observing that the alternating momentum-dependent spin polarization is orthogonal to the magnetic-ordering vector. The collinearity, even-parity and time-reversal-odd nature of the demonstrated relativistic spin polarization in the altermagnet is unparalleled in conventional forms of the relativistic spin polarization. Our experimental results and methodology are supported by non-relativistic spin-symmetry and relativistic magnetic-symmetry analyses, and microscopic ab initio ground-state and photoemission theory.

cond-mat.mes-hall

Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses.

cond-mat.mtrl-sci

Spin-to-charge-current conversion in altermagnetic candidate RuO$_2$ probed by terahertz emission spectroscopy

Using the THz emission spectroscopy, we investigate ultrafast spin-to-charge current conversion in epitaxial thin films of the altermagnetic candidate RuO$_2$. We perform a quantitative analysis of competing effects that can contribute to the measured anisotropic THz emission. These include the anisotropic inverse spin splitter and spin Hall effects in RuO$_2$, the anisotropic conductivity of RuO$_2$, and the birefringence of the TiO$_2$ substrate. We observe that the leading contribution to the measured signals comes from the anisotropic inverse spin Hall effect, with an average spin-Hall angle of $2.4\times 10^{-3}$ at room temperature. In comparison, a possible contribution from the altermagnetic inverse spin-splitter effect is found to be approximately $2-4\times 10^{-4}$. Our work stresses the importance of carefully disentangling spin-dependent phenomena that can be generated by the unconventional altermagnetic order, from the effects of the relativistic spin-orbit coupling.

cond-mat.mes-hall

Altermagnetic spintronics

The research landscape of magnetism has been recently enriched by the discovery of altermagnetism. It is an unconventional phase of matter characterized by a d-wave (or higher even-parity-wave) collinear compensated spin ordering, which enables strongly spin-polarized currents in the absence of magnetization, and features fast spin dynamics. Simultaneously, on the applied magnetism front, spintronic memories based on conventional ferromagnets are currently turning from a niche to a mass produced integrated-circuit technology as they start to complement semiconductors on advanced-node microprocessor chips. Our review connects these two rapidly developing science and technology fields by discussing how the unique signatures of altermagnetism can impact the functionality and scalability of future spintronic devices. As a reference, we first briefly recall the merits and physical limitations of the present ferromagnetic spintronic technology, and of proof-of-concept spintronic devices based on conventional collinear antiferromagnets and non-collinear compensated magnets. The main part of the review then focuses on physical concepts of the altermagnetic spintronics, and its potential interplay with ferroelectricity or superconductivity. We conclude with an outlook on the nascent experimental research of altermagnetic spintronics, and on the role of relativistic phenomena.

cond-mat.mtrl-sci

Single-crystalline CrSb(0001) thin films grown by dc magnetron co-sputtering

The recent discovery of altermagnetism has sparked renewed interest in the growth of epitaxial films of the NiAs-phase polymorph of CrSb. This paper describes the magnetron sputtering-based fabrication and characterization of high-quality single crystalline CrSb(0001) thin films supported by an isostructural nonmagnetic PtSb buffer. X-ray diffraction and scanning transmission electron microscopy show that the films are phase pure and possess a very high crystalline quality (mosaicity ~0.05deg), while also being free of extended crystallographic defects. Both scanning electron microscopy and atomic force microscopy confirm their smooth and homogeneous topography. Additionally, the elemental composition of our films was found to be close to stoichiometric via electron probe microanalysis and x-ray fluorescence. Thus, the developed samples represent an ideal platform for further investigation of the material properties of CrSb.

cond-mat.mtrl-sci

Altermagnetism: an unconventional spin-ordered phase of matter

The Pauli exclusion principle combined with interactions between fermions is a basic mechanism across condensed-matter systems giving rise to a spontaneous breaking of the spin-space rotation symmetry of spin-ordered phases. Ferromagnetism is a conventional manifestation of spin ordering which leads to numerous applications, e.g., in spintronic information technologies. Altermagnetism, whose recent discovery was largely motivated by spintronics, stands apart from conventional magnetism in the sense that it spontaneously breaks not only spin-space but also real-space rotation symmetries, while it preserves a symmetry combining spin-space and real-space rotations. This is realized on crystals by a collinear compensated ordering of spins with a characteristic d, g or i-wave symmetry. Our Perspective goes beyond the theory of spin arrangements on crystals by connecting altermagnetism to basic notions in condensed matter physics. Specifically, we reflect on the analogies and distinctions of altermagnetism as compared to superfluid 3He and theories of spin ordering in the momentum space generated by other higher-partial-wave instabilities of a Fermi-liquid. On one hand, all these physical systems have in common the extraordinary combination of spontaneous breaking of spin-space and real-space rotation symmetries. On the other hand, we point out that there are key differences, both at the symmetry level and, particularly, at the level of microscopic mechanisms of ordering. These explain the comparatively large abundance, robustness and utility of altermagnetism, as predicted by the symmetry-classification of spin arrangements on crystals and ab initio calculations, and supported by initial experiments.

cond-mat.mtrl-sci

Altermagnetism imaged and controlled down to the nanoscale

Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases.

cond-mat.mtrl-sci

Structure, control, and dynamics of altermagnetic textures

We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we can explain intuitively the characteristic lifted degeneracy of their magnon spectra, by the emergence of an effective sublattice-dependent anisotropic spin stiffness arising naturally from the phenomenological theory. We show that as a consequence the altermagnetic domain walls, in contrast to antiferromagnets, have a finite gradient of the magnetization, with its strength and gradient direction connected to the altermagnetic anisotropy, even for 180$^\circ$ domain walls. This gradient generates a ponderomotive force in the domain wall in the presence of a strongly inhomogeneous external magnetic field, which may be achieved through magnetic force microscopy techniques. The motion of these altermagentic domain walls is also characterized by an anisotropic Walker breakdown, with much higher speed limits of propagation than ferromagnets but lower than antiferromagnets.

cond-mat.mes-hall

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Previous experiments in compensated magnets have demonstrated a potential for approaching the limit of fastest and least-dissipative operation of digital memory bits. However, the analog route has been virtually unexplored at (sub)ps time scales. In this paper, we report on experimental separation of heat-related and quench-switching-related resistance signal dynamics induced at room temperature by a single femtosecond-laser-pulse in memory devices made from a metallic antiferromagnetic CuMnAs. We show that the heat-related dynamics, on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory where information about input stimuli, represented by laser-pulses, is stored temporarily. When the quench-switching threshold is reached, information is transferred to the device's variable resistance, serving as a long-term memory, with time components of 10 ms and 10 s. The potentially appealing features of the heat-based memory for several distinct research fields, including bio-inspired analogue devices and heat-based logic, are also discussed.

cond-mat.mtrl-sci

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material.

cond-mat.mtrl-sci

Altermagnetic lifting of Kramers spin degeneracy

Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.

physics.app-ph

Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$

Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism, but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$ by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic-structure basis for a family of novel phenomena and functionalities in fields ranging from topological matter to spintronics, that are based on the unconventional time-reversal symmetry breaking in altermagnets.

cond-mat.mtrl-sci

X-ray Magnetic Circular Dichroism in Altermagnetic $\alpha$-MnTe

Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dichroism (XMCD) in the altermagnetic class. Our results highlight the distinct phenomenology in altermagnets of this time-reversal symmetry breaking response, and its potential utility for element-specific spectroscopy and microscopy in altermagnets. As a representative material for our XMCD study we choose $\alpha$-MnTe with the compensated antiparallel magnetic order in which an anomalous Hall effect has been already demonstrated both in theory and experiment. The predicted magnitude of XMCD lies well within the resolution of existing experimental techniques.

cond-mat.mtrl-sci

Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor

The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.

cond-mat.mtrl-sci

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.

cond-mat.other

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields.

cond-mat.mtrl-sci

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.

physics.app-ph