arXiv subjects

T. Jungwirth

Publications and source records attributed to T. Jungwirth.

At least 163 records · Page 9Linked to original sources

arXiv2004

Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a review

Rapid developments in material research of metallic ferromagnetic (III,Mn)V semiconductors over the past few years have brought a much better understanding of these complex materials. We review here some of the main developments and current understanding of the bulk properties of these systems within the metallic regime, focusing principally on the magneto-transport and magneto-optical properties. Although several theoretical approaches are reviewed, the bulk of the review uses the effective Hamiltonian approach, which has proven useful in describing many of these properties namely in (Ga,Mn)As and (In,Mn)As. The model assumes a ferromagnetic coupling between Mn d-shell local moments mediated by holes in the semiconductor valence band.

cond-mat.mtrl-sci↗

arXiv2004

Universal Intrinsic Spin-Hall Effect

We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents in paramagnetic spin-orbit coupled systems. We argue that in a high mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin-current that flows perpendicular to the charge current is intrinsic. In the usual case where both spin-orbit split bands are occupied, the spin-Hall conductivity has a universal value.

cond-mat.mes-hall↗

arXiv2003

Orbital Effects of In-Plane Magnetic Fields Probed by Mesoscopic Conductance Fluctuations

We use the high sensitivity to magnetic flux of mesoscopic conductance fluctuations in large quantum dots to investigate changes in the two-dimensional electron dispersion caused by an in-plane magnetic field. In particular, changes in effective mass and the breaking of momentum reversal symmetry in the electron dispersion are extracted quantitatively from correlations of conductance fluctuations. New theory is presented, and good agreement between theory and experiment is found.

cond-mat.mes-hall↗

arXiv2003

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as $\sim 10^{5} {\rm A cm}^{-2}$.

cond-mat.mes-hall↗

arXiv2003

Numerical Investigation on Asymmetric Bilayer System at Integer Filling Factor

Deformation of the easy-axis ferromagnetic state in asymmetric bilayer systems are investigated numerically. Using the exact diagonalization the easy-axis to easy-plane ferromagnetic transition at total filling factor 3 or 4 is investigated. At still higher filling, novel stripe state in which stripes are aligned in the vertical direction occurs. The Hartree-Fock energies of relevant ordered states are calculated and compared.

cond-mat.mes-hall↗

arXiv2003

First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe

We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. The theory is able to account for both dc and magneto-optical Hall conductivities with no adjustable parameters.

cond-mat.mes-hall↗

arXiv2003

Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductor by carbon co-doping

We present a theoretical study of (Ga,Mn)(As,C) diluted magnetic semiconductors with high C acceptor density that combines insights from phenomenological model and microscopic approaches. A tight-binding coherent potential approximation is used to describe the electronic structure in the presence of Mn$_{\rm Ga}$ and C$_{\rm As}$ impurities. We find only a small effect of C on the distribution and coherence of electronic states close to the top of the valence band and on the coupling between Mn moments, even at doping levels of several per cent. These results justify applying the model of ferromagnetic Mn-Mn coupling mediated by itinerant holes in the valence band also to C doped samples. The increase of ferromagnetic transition temperature due to the presence of C acceptors is illustrated by calculations that use the k.p Kohn-Luttinger description of the GaAs valence band and assume systems where Mn local moment and itinerant hole densities can be varied independently.

cond-mat.mtrl-sci↗

arXiv2003

Exact diagonalization study of domain structure in integer filling factor quantum Hall ferromagnets

Opposite spin Landau levels in a quantum well can be brought into coincidence by tilting the magnetic field away from normal orientation. We demonstrate that the magnetotransport anomaly at integer filling factors that was recently discovered by Pan {\it et al} is due to such a coincidence. By performing exact diagonalization calculations using microscopically evaluated effective electron-electron interactions, we are able to establish that the electronic ground state at coincidence is an Ising quantum Hall ferromagnet and that the low energy excitations correspond to the formation of a domain wall.

cond-mat.mes-hall↗

arXiv2003

DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors

We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. This quantitative understanding of dc magneto-transport effects in (Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.

cond-mat.mtrl-sci↗

arXiv2003

Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors

We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall conductivity reduces to the $\vec k$-space Berry's phase value predicted by a recent theory of the anomalous Hall effect that is able to account quantitatively for experiment. We compute theoretical estimates for magnetic circular dichroism, Faraday rotation, and Kerr effect parameters as a function of Mn concentration and free carrier density. The mid-infrared response feature is present in each of these magneto-optical effects.

cond-mat.mtrl-sci↗

arXiv2002

Theoretical models of ferromagnetic III-V semiconductors

Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compounds that have the highest transition temperatures appear to be well understood, and efficient computation methods have been developed which are able to model their magnetic, transport, and optical properties. However many questions remain.

cond-mat.mtrl-sci↗

arXiv2002

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.

cond-mat.mtrl-sci↗

arXiv2002

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.

cond-mat.mtrl-sci↗

arXiv2002

Infrared conductivity of metallic (III,Mn)V ferromagnets

We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at $\hbar ω\sim 220 {\rm meV}$ and obscure the broadened Drude peak. We demonstrate that transverse f-sum rule measurements can be used to extract accurate values for the free carrier density, bypassing the severe characterization difficulties that have till now been created by the large anomalous Hall effect in these materials.

cond-mat.mtrl-sci↗

arXiv2002

Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements in a semiconductor lattice, can become ferromagnetic when doped. In this article we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanism that cause magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage, and other system parameters that can in principle be engineered to yield desired results.

cond-mat.mtrl-sci↗

arXiv2002

Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contribution from the valence band's heavy holes and the large spin stiffness that results from strong spin-orbit coupling in the valence band. Our calculations demonstrate that this model for the ferromagnetism of these systems is fully consistent with the room-temperature ferromagnetism reported for Mn doped nitrides.

cond-mat.mtrl-sci↗

arXiv2001

Ferromagnetism in (III,Mn)V Semiconductors

In this review article we briefly summarize the main experimental properties of (III,Mn)V ferromagnets and outline several different but related approaches that have been explored in an effort to gain insight into these materials. The main body of the paper deals with the development of the semi-phenomenological model in which the low energy degrees of freedom are exchange-coupled valence-band holes and $S=5/2$ Mn local moments. We discuss physical predictions based on a mean-field treatment of the disorder-free model and demonstrate that it successfully describes a number of non-trivial properties of (Ga,Mn)As and (In,Mn)As ferromagnets. Study of collective excitations of these ferromagnets shows that the simple mean-field-theory is reasonably reliable for typical parameters of current samples but must fail at large carrier densities and also in the limit of very strong exchange coupling. Finally we discuss the results of Monte Carlo calculations that describe the effect of collective fluctuations of Mn moment orientations. The method can deal with some of the complications and additional physics, including the possibility of non-collinear ground states, that enters when disorder is added to the theoretical model.

cond-mat.mes-hall↗

arXiv2001

Anomalous Hall effect in ferromagnetic semiconductors

We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon traversing closed paths on the spin-split Fermi surface of a ferromagnetic state. It can be applied equally well to any itinerant electron ferromagnet. The quantitative agreement between our theory and experimental data in both (In,Mn)As and (Ga,Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors.

cond-mat.mes-hall↗