arXiv subjects

T. Last

Publications and source records attributed to T. Last.

3 recordsLinked to original sources

arXiv2010

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

cond-mat.mes-hall↗

arXiv2008

Spin-dephasing anisotropy for electrons in a diffusive quasi-1D GaAs wire

We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal strength of Rashba and linear Dresselhaus spin-orbit fields a strong suppression of spin-dephasing is found. This suppression of spin-dephasing shows a strong dependence on the wire orientation with respect to the crystal lattice. The relevance for realistic cases is evaluated by studying how this effect degrades for deviating strength of Rashba and linear Dresselhaus fields, and with the inclusion of the cubic Dresselhaus term.

cond-mat.mes-hall↗

arXiv2004

Optimization of nanostructured permalloy electrodes for a lateral hybrid spin-valve structure

Ferromagnetic electrodes of a lateral semiconductor-based spin-valve structure are designed to provide a maximum of spin-polarized injection current. A single-domain state in remanence is a prerequisite obtained by nanostructuring Permalloy thin film electrodes. Three regimes of aspect ratios $m$ are identified by room temperature magnetic force microscopy: (i) high-aspect ratios of $m \ge 20$ provide the favored remanent single-domain magnetization states, (ii) medium-aspect ratios $m \sim 3$ to $m \sim 20$ yield highly remanent states with closure domains and (iii) low-aspect ratios of $m \le 3$ lead to multi-domain structures. Lateral kinks, introduced to bridge the gap between micro- and macroscale, disturb the uniform magnetization of electrodes with high- and medium-aspect ratios. However, vertical flanks help to maintain a uniformly magnetized state at the ferromagnet-semiconcuctor contact by domain wall pinning.

cond-mat.other↗