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T. Lehmann

Publications and source records attributed to T. Lehmann.

3 recordsLinked to original sources

Flow configuration and pressure effects on turbulent premixed hydrogen jet flames

Turbulent lean premixed hydrogen jet flames are simulated using direct numerical simulation employing detailed chemistry in both slot and round configurations at various pressures. All cases are simulated at a constant jet Reynolds number ($Re_j = 10000$) and a fixed ratio of characteristic length scales. While normalised macroscopic quantities (e.g., flame length, turbulent flame speed) appear comparable across configurations, fundamental discrepancies are observed that originate from the coupling of large- and small-scale effects. Mean local reactivity ($I_0$) decays monotonically downstream, driven by a decreasing Karlovitz number ($Ka^{*}$); however, this decay is modulated by geometry, with round jets exhibiting a faster decline due to mean negative curvature. Pressure is identified as a critical small-scale driver, fundamentally altering flame propagation by increasing the sensitivity of displacement speed to local curvature. At elevated pressures, this sensitivity induces higher flame stretch and accelerates wrinkling near the nozzle, which compounds with geometry-dependent effects, such as the slower decay of mean strain in slot configurations.

physics.flu-dyn

Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi$_2$Se$_3$ crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures $T \lesssim 50$ K and fields $B \lesssim 1$ T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.

cond-mat.mtrl-sci

Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes

Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications.

cond-mat.mes-hall