arXiv subjects

T. Mitsuhashi

Publications and source records attributed to T. Mitsuhashi.

7 recordsLinked to original sources

arXiv2018

High-density two-dimensional electron system induced by oxygen vacancies in ZnO

We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signatures of many-body interactions that we analyze through a self-consistent extraction of the system self-energy and a modeling as a coupling of a 2D Fermi liquid with a Debye distribution of phonons.

cond-mat.mtrl-sci↗

arXiv2018

Observation of Dirac-like energy band and ring-torus Fermi surface associated with the nodal line in topological insulator CaAgAs

One of key challenges in current material research is to search for new topological materials with inverted bulk-band structure. In topological insulators, the band inversion caused by strong spin-orbit coupling leads to opening of a band gap in the entire Brillouin zone, whereas an additional crystal symmetry such as point-group and nonsymmorphic symmetries sometimes prohibits the gap opening at/on specific points or line in momentum space, giving rise to topological semimetals. Despite many theoretical predictions of topological insulators/semimetals associated with such crystal symmetries, the experimental realization is still relatively scarce. Here, using angle-resolved photoemission spectroscopy with bulk-sensitive soft x-ray photons, we experimentally demonstrate that hexagonal pnictide CaAgAs belongs to a new family of topological insulators characterized by the inverted band structure and the mirror reflection symmetry of crystal. We have established the bulk valence-band structure in three-dimensional Brillouin zone, and observed the Dirac-like energy band and ring-torus Fermi surface associated with the line node, where bulk valence and conducting bands cross on a line in the momentum space under negligible spin-orbit coupling. Intriguingly, we found that no other bands cross the Fermi level and therefore the low-energy excitations are solely characterized by the Dirac-like band. CaAgAs provides an excellent platform to study the interplay among low-energy electron dynamics, crystal symmetry, and exotic topological properties.

cond-mat.mes-hall↗

arXiv2017

Three-dimensional band structure of LaSb and CeSb:Absence of band inversion

We have performed angle-resolved photoemission spectroscopy (ARPES) of LaSb and CeSb, a candidate of topological insulator. Using soft-x-ray photons, we have accurately determined the three-dimensional bulk band structure and revealed that the band inversion at the Brillouin-zone corner - a prerequisite for realizing topological-insulator phase - is absent in both LaSb and CeSb. Moreover, unlike the ARPES data obtained with soft-x-ray photons, those with vacuum ultraviolet (VUV) photons were found to suffer significant $k_z$ broadening. These results suggest that LaSb and CeSb are topologically trivial semimetals, and unusual Dirac-cone-like states observed with VUV photons are not of the topological origin.

cond-mat.mtrl-sci↗

arXiv2016

Hubbard band or oxygen vacancy states in the correlated electron metal SrVO$_3$?

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO$_3$. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating $d^0$ transition metal oxides.

cond-mat.str-el↗

arXiv2015

Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO

Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are ongoing debate mainly with the superconducting gap characterized with in-situ analysis for FeSe films grown by bottom-up molecular-beam epitaxy. Here, we demonstrate the alternative access to investigate the high-TC superconductivity in ultrathin FeSe with top-down electrochemical etching technique in three-terminal transistor configuration. In addition to the high-TC FeSe on SrTiO3, the electrochemically etched ultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K, implying that the application of electric-field effectively contributes to the high-TC superconductivity in ultrathin FeSe regardless of substrate material. Moreover, the observable critical thickness for the high-TC superconductivity is expanded up to 10-unit-cells under applying electric-field and the insulator-superconductor transition is electrostatically controlled. The present demonstration implies that the electric-field effect on both conduction and valence bands plays a crucial role for inducing high-TC superconductivity in FeSe.

cond-mat.supr-con↗

arXiv2004

Absorption of Scintillation Light in a 100 $\ell$ Liquid Xenon$γ$ Ray Detector and Expected Detector Performance

An 800L liquid xenon scintillation $γ$ ray detector is being developed for the MEG experiment which will search for $μ^+\to\mathrm{e}^+γ$ decay at the Paul Scherrer Institut. Absorption of scintillation light of xenon by impurities might possibly limit the performance of such a detector. We used a 100L prototype with an active volume of 372x372x496 mm$^3$ to study the scintillation light absorption. We have developed a method to evaluate the light absorption, separately from elastic scattering of light, by measuring cosmic rays and $α$ sources. By using a suitable purification technique, an absorption length longer than 100 cm has been achieved. The effects of the light absorption on the energy resolution are estimated by Monte Carlo simulation.

physics.ins-det↗

arXiv2004

Negative Momentum Compaction at KEKB

KEKB is a high luminosity e+e- collider for studying B mesons and has achieved the design luminosity of 1034cm-2s-1 in 2003. In order to get higher luminosity, we tested negative momentum compaction optics in the summer of 2003. We measured the bunch length using three methods at 0.7mA to 1.17mA bunch current and confirmed the length was shortened with the negative momentum compaction optics.

physics.acc-ph↗