arXiv subjects

T. Novotný

Publications and source records attributed to T. Novotný.

8 recordsLinked to original sources

arXiv2026

The impact of intraband carrier dynamics on the optical properties of two-dimensional materials: I. General theory

We consider the generation of microscopic polarization in two-dimensional semiconductors under intense optical fields in the non-resonant regime. We demonstrate that the intraband motion of quasiparticles, driven by the electric field of the laser pulse, contributes substantially to the system's polarization. The effects of intraband motion are analyzed using the semiconductor Bloch equations. We propose a method for solving these equations by considering them in a reference frame co-moving along the direction of the electric field of the optical pulse. We demonstrate the developed technique on transition metal dichalcogenide monolayers irradiated by strong circularly-polarized infrared light. The solution is provided in the form of a power series expansion in a small parameter that naturally emerges in the system. The implications of the results are examined, and the limitations of the approach are discussed.

cond-mat.mes-hall↗

arXiv2023

Hidden symmetry in interacting-quantum-dot-based multi-terminal Josephson junctions

We study a multi-terminal Josephson junction based on an interacting quantum dot coupled to $n$ superconducting BCS leads. Using an Anderson type model of a local level with an arbitrary onsite Coulomb repulsion, we uncover its surprising equivalence with an effective two-terminal junction with symmetric couplings to appropriately phase-biased leads. Regardless of the strength of the Coulomb interaction, this hidden symmetry enables us to apply well-established numerical and theoretical tools for exact evaluation of various physical quantities, and imposes strict relations among them. Focusing on three-terminal devices, we then demonstrate several phenomena such as the existence of the finite energy band crossings, superconducting transistor and diode effects, as well as current phase relation modulation.

cond-mat.mes-hall↗

arXiv2023

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in low-dimensional semiconductors. Here we demonstrate that the valley degeneracy of exciton energies in transition metal dichalcogenide monolayers may be lifted by coherent optical interactions on timescales corresponding to few tens of femtoseconds. The optical Stark and Bloch-Siegert effects generated by strong nonresonant circularly-polarized light induce valley-selective blue shifts of exciton quantum levels by more than 30 meV. We show these phenomena by studying the two most intensive exciton resonances in transiton metal dichalcogenide monolayers and compare the results to a theoretical model, which properly includes the Coulomb interaction and exciton dispersion. These results open the door for ultrafast valleytronics working at multiterahertz frequencies.

cond-mat.mes-hall↗

arXiv2022

Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe$_2$ and MoS$_2$

We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.

cond-mat.mes-hall↗

arXiv2015

Perturbation theory of a superconducting $0-π$ impurity quantum phase transition

A single-level quantum dot with Coulomb repulsion attached to two superconducting leads is studied via the perturbation expansion in the interaction strength. We use the Nambu formalism and the standard many-body diagrammatic representation of the impurity Green functions to formulate the Matsubara self-consistent perturbation expansion. We show that at zero temperature second order of the expansion in its $\it{spin-symmetric}$ version yields a nearly perfect agreement with the numerically exact calculations for the position of the $0-π$ phase boundary at which the Andreev bound states reach the Fermi energy as well as for the values of single-particle quantities in the 0-phase. We present results for phase diagrams, level occupation, induced local superconducting gap, Josephson current, and energy of the Andreev bound states with the precision surpassing any (semi)analytical approaches employed thus far.

cond-mat.mes-hall↗

arXiv2007

Critical Current 0-$π$ Transition in Designed Josephson Quantum Dot Junctions

We report on quantum dot based Josephson junctions designed specifically for measuring the supercurrent. From high-accuracy fitting of the current-voltage characteristics we determine the full magnitude of the supercurrent (critical current). Strong gate modulation of the critical current is observed through several consecutive Coulomb blockade oscillations. The critical current crosses zero close to, but not at, resonance due to the so-called 0-$π$ transition in agreement with a simple theoretical model.

cond-mat.supr-con↗

arXiv2006

Electron transport in single wall carbon nanotube weak links in the Fabry-Perot regime

We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential conductance up to $3e^2/h$ and exhibit clear Fabry-Perot interference patterns in the bias spectroscopy plot. We observed subharmonic gap structure in the differential conductance and a distinct peak in the conductance at zero bias which is interpreted as a manifestation of a supercurrent. The gate dependence of this supercurrent as well as the excess current are examined and compared to a coherent theory of superconducting point contacts with good agreement.

cond-mat.supr-con↗

arXiv2005

Simple models suffice for the single dot quantum shuttle

A quantum shuttle is an archetypical nanoelectromechanical device, where the mechanical degree of freedom is quantized. Using a full-scale numerical solution of the generalized master equation describing the shuttle, we have recently shown [Novotný {\it et al.}, Phys. Rev. Lett. {\bf 92}, 248302 (2004)] that for certain limits of the shuttle parameters one can distinguish three distinct charge transport mechanisms: (i) an incoherent tunneling regime, (ii) a shuttling regime, where the charge transport is synchronous with the mechanical motion, and (iii) a coexistence regime, where the device switches between the tunneling and shuttling regimes. While a study of the cross-over between these three regimes requires the full numerics, we show here that by identifying the appropriate time-scales it is possible to derive vastly simpler equations for each of the three regimes. The simplified equations allow a clear physical interpretation, are easily solved, and are in good agreement with the full numerics in their respective domains of validity.

cond-mat.mes-hall↗