arXiv subjects

T. Oguchi

Publications and source records attributed to T. Oguchi.

22 records · Page 2Linked to original sources

arXiv2010

Orbital-dependent modifications of electronic structure across magneto-structural transition in BaFe2As2

Laser angle-resolved photoemission spectroscopy (ARPES) is employed to investigate the temperature (T) dependence of the electronic structure in BaFe2As2 across the magneto-structural transition at TN ~ 140 K. A drastic transformation in Fermi surface (FS) shape across TN is observed, as expected by first-principles band calculations. Polarization-dependent ARPES and band calculations consistently indicate that the observed FSs at kz ~ pi in the low-T antiferromagnetic (AF) state are dominated by the Fe3dzx orbital, leading to the two-fold electronic structure. These results indicate that magneto-structural transition in BaFe2As2 accompanies orbital-dependent modifications in the electronic structure.

cond-mat.supr-con↗

arXiv2008

Specific heat and electronic states of superconducting boron-doped silicon carbide

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related ''mixed'' system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to non-superconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two ''parent'' materials C:B and Si:B.

cond-mat.supr-con↗

arXiv2006

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

We have investigated the superconductivity discovered in boron (B)-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower symmetric B(2) site substituted as boron+hydrogen(B+H) complex, respectively. A clear evidence is presented that the effective carriers introduced by B(1) substitution are responsible for the superconductivity, whereas the charge neutral B(2) sites does not offer the carriers effectively. The result is also corroborated by the density of states deduced by 1/T1T measurement, indicating that the evolution of superconductivity is driven by the effective carrier introduced by substitution at B(1) site.

cond-mat.supr-con↗

arXiv2003

Electronic Structure of B-2$pσ$ and $pπ$ States in MgB$_2$, AlB$_2$ and ZrB$_2$ Single Crystals

The effect of electron correlation (EC) on the electronic structure in MgB$_2$, AlB$_2$ and ZrB$_2$, is studied by examining the partial density of states (PDOS) of B-2$pσ$ and $pπ$ orbitals using the polarization dependence of x-ray emission and absorption spectra. The discrepancies between observed and calculated PDOSs cannot be attributed to EC effects. The present results suggest that the EC effect is less than the experimental error ($\sim$ 0.2 eV), which indirectly supports a scenario that electron-phonon interaction plays an essential role in the occurrence of superconductivity.

cond-mat.supr-con↗