arXiv subjects

T. Ouaj

Publications and source records attributed to T. Ouaj.

3 recordsLinked to original sources

arXiv2020

Fractional quantum Hall effect in CVD-grown graphene

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

cond-mat.mes-hall↗

arXiv2019

Extraordinary high room-temperature carrier mobility in graphene-WSe$_2$ heterostructures

High charge carrier mobilities play a fundamental role for high-frequency electronics, integrated optoelectronics as well as for sensor and spintronic applications, where device performance is directly linked to the magnitude of the carrier mobility. Van der Waals heterostructures formed by graphene and hexagonal boron nitride (hBN) already outperform all known materials in terms of room temperature mobility. Here, we show that the room temperature carrier mobility of today's best graphene/hBN devices can be surpassed by more than a factor of three by heterostructures formed by tungsten diselenide (WSe$_2$), graphene and hBN, which can have mobilities as high as 350,000 cm$^2$/(Vs) and resistivities as low as $15$ Ohm. The resistivity of these devices shows a significantly weaker temperature dependence than the one of graphene on any other known substrate. Notably, the reduced temperature dependence and the resulting mobility enhancement in graphene show an unexpected relation to the thickness of the WSe$_2$ layer and to the minimum conductivity at the charge neutrality point, suggesting a role of increased charge disorder and/or enhanced screening and questioning the current understanding of electron-phonon scattering in graphene-based van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2017

Tailoring mechanically-tunable strain fields in graphene

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly used so far either couple the electrical and mechanical properties of the system simultaneously or introduce some unwanted disturbances due to the substrate. Here, we report on silicon micro-machined comb-drive actuators to controllably and reproducibly induce strain in a suspended graphene sheet, in an entirely mechanical way. We use spatially resolved confocal Raman spectroscopy to quantify the induced strain, and we show that different strain fields can be obtained by engineering the clamping geometry, including tunable strain gradients of up to 1.4 %/$μ$m. Our approach also allows for multiple axis straining and is equally applicable to other two-dimensional materials, opening the door to an investigating their mechanical and electromechanical properties. Our measurements also clearly identify defects at the edges of a graphene sheet as being weak spots responsible for its mechanical failure.

cond-mat.mtrl-sci↗