arXiv subjects

T. Peltola

Publications and source records attributed to T. Peltola.

14 recordsLinked to original sources

arXiv2025

Vertex Imaging Hadron Calorimetry Using AI/ML Tools

The fluctuations in energy loss to processes that do not generate measurable signals, such as binding energy losses, set the limit on achievable hadronic energy resolution in traditional energy reconstruction techniques. The correlation between the number of hadronic interaction vertices in a shower and invisible energy is found to be strong and is used to estimate invisible energy fraction in highly granular calorimeters in short time intervals (<10 ns). We simulated images of hadronic showers using GEANT4 and deployed a neural network to analyze the images for energy regression. The neural network-based approach results in significant improvement in energy resolution, from 13 % to 4 % in the case of a Cherenkov calorimeter for 100 GeV pion showers. We discuss the significance of the phenomena responsible for this improvement and the plans for experimental verification of these results and further development.

physics.ins-det↗

arXiv2025

Modeling of surface-state induced inter-electrode isolation of $n$-on-$p$ devices in mixed-field and $γ$-irradiation environments

In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to counter the detrimental effect on position resolution of the accumulation of positive net oxide charge with radiation. In addition to the positively charged layer close to the Si/SiO$_2$-interface, surface damage introduced by radiation in SiO$_2$-passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/$γ$ (mixed field)- or $γ$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps ($N_\textrm{it,acc/don}$) in mixed-field environment. In this work, an inter-electrode resistivity ($ρ_\textrm{int}$) TCAD-simulation study of $n$-on-$p$ sensors with and without $p$-stop isolation implants was conducted for both irradiation types. Higher levels of $ρ_\textrm{int}$ showed correlation to higher densities of deep $N_\textrm{it,acc/don}$, with the isolation performance of the mixed-field irradiated sensors becoming independent of the presence of $p$-stop implant between the $n^+$-electrodes throughout the investigated dose range up to about 100 kGy. The low introduction rates of deep $N_\textrm{it,acc/don}$ in $γ$-irradiated sensors resulted in high sensitivity of $ρ_\textrm{int}$ to the presence and peak doping of $p$-stop above the lowest dose of 7 kGy in the study. Because of the advantageous influence of radiation-induced accumulation of deep $N_\textrm{it}$ on the inter-electrode isolation, position sensitive $n$-on-$p$ sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

physics.ins-det↗

arXiv2024

High-granularity Dual-readout Calorimeter: Evolution of a Classic Prototype

The original dual-readout calorimeter prototype (DREAM), constructed two decades ago, has proven instrumental in advancing our understanding of calorimetry. It has facilitated a multitude of breakthroughs by leveraging signals from complementary media (Cherenkov and scintillation) to capture fluctuations in electromagnetic energy fraction within hadronic showers. Over the years, extensive studies have shed light on the performance characteristics of this module, rendering it exceptionally well-understood. Drawing on this wealth of experience, we have embarked on enhancing the detectors' capabilities further by integrating fast silicon photomultipliers (SiPMs) with finer transverse segmentation, $\sim$1 cm$^2$, as well as longitudinal segmentation by timing measuring better than 10 cm. This configuration will allow us to image hadronic showers with high granularity (HG-DREAM). We argue that the spatial information provided by such a granular detector in a short time window ($\approx$5 ns) leads to substantial enhancement in energy resolution when advanced neural networks are employed in energy reconstruction. We briefly present the current status of work, new concepts that have been introduced to the detector, and expectations from simulations.

physics.ins-det↗

arXiv2024

A method to observe field-region oxide charge and inter-electrode isolation from $CV$-characteristics of $n$-on-$p$ devices

$N$-on-$p$ silicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditional $p$-on-$n$ sensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO$_2$-passivated $n$-on-$p$ sensors is the generation of an inversion layer under the Si/SiO$_2$-interface by a positive interface-oxide-charge ($N_\textrm{ox}$) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolation implants ($p$-stop, $p$-spray) between $n^+$-electrodes. Focusing on the guard-ring regions of $n$-on-$p$ sensors where no isolation implants are applied between the electrodes, a capacitance-voltage ($CV$) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage ($V_\textrm{th,iso}$) in the $CV$-characteristics of a biased $n^+$-electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measured $V_\textrm{th,iso}$ was found to contain information on the field-region $N_\textrm{ox}$ and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiated $n$-on-$p$ sensors, the results indicate that position sensitive $n$-on-$p$ sensors without isolation implants may be feasible in future HEP experiments.

physics.ins-det↗

arXiv2023

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors

Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO$_2$-interface. High density positive interface net charge can be detrimental to the operation of a multi-channel $n$-on-$p$ sensor since the inversion layer generated under the Si/SiO$_2$-interface can cause loss of position resolution by creating a conduction channel between the electrodes. In the investigation of the radiation-induced accumulation of oxide charge and interface traps, a capacitance-voltage characterization study of n/$γ$- and $γ$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that close agreement between measurement and simulation were possible when oxide charge density was complemented by both acceptor- and donor-type deep interface traps with densities comparable to the oxide charges. Corresponding inter-strip resistance simulations of a $n$-on-$p$ sensor with the tuned oxide charge density and interface traps show close agreement with experimental results. The beneficial impact of radiation-induced accumulation of deep interface traps on inter-electrode isolation may be considered in the optimization of the processing parameters of isolation implants on $n$-on-$p$ sensors for the extreme radiation environments.

physics.ins-det↗

arXiv2022

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

physics.ins-det↗

arXiv2022

Solid State Detectors and Tracking for Snowmass

Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03).

physics.ins-det↗

arXiv2021

Aalto-1, multi-payload CubeSat: design, integration and launch

The design, integration, testing, and launch of the first Finnish satellite Aalto-1 is briefly presented in this paper. Aalto-1, a three-unit CubeSat, launched into Sun-synchronous polar orbit at an altitude of approximately 500 km, is operational since June 2017. It carries three experimental payloads: Aalto Spectral Imager (AaSI), Radiation Monitor (RADMON), and Electrostatic Plasma Brake (EPB). AaSI is a hyperspectral imager in visible and near-infrared (NIR) wavelength bands, RADMON is an energetic particle detector and EPB is a de-orbiting technology demonstration payload. The platform was designed to accommodate multiple payloads while ensuring sufficient data, power, radio, mechanical and electrical interfaces. The design strategy of platform and payload subsystems consists of in-house development and commercial subsystems. The CubeSat Assembly, Integration & Test (AIT) followed Flatsat -- Engineering-Qualification Model (EQM) -- Flight Model (FM) model philosophy for qualification and acceptance. The paper briefly describes the design approach of platform and payload subsystems, their integration and test campaigns, and spacecraft launch. The paper also describes the ground segment & services that were developed by the Aalto-1 team.

physics.space-ph↗

arXiv2020

Charge Collection and Electrical Characterization of Neutron Irradiated Silicon Pad Detectors for the CMS High Granularity Calorimeter

The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$μ\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.

physics.ins-det↗

arXiv2017

Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector

A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.

physics.ins-det↗

arXiv2016

Characterization of Thin p-on-p Radiation Detectors with Active Edges

Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 $μ$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

physics.ins-det↗

arXiv2015

Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.

physics.ins-det↗

arXiv2015

Processing and characterization of epitaxial GaAs radiation detectors

GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

physics.ins-det↗

arXiv2014

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed before and after irradiation for fluences up to $1.5\times10^{15}$ $\textrm{n}_{\textrm{eq}}$cm$^{-2}$ for the n-on-p sensors. A two level and non-uniform three level defect models were applied for the proton irradiation simulations and two level model for neutrons. The results are presented together with the measurements of strip detectors irradiated by different particles and fluences and show considerable agreement for both CCE and its position dependency.

physics.ins-det↗